A
Andras Kis
Researcher at École Polytechnique Fédérale de Lausanne
Publications - 183
Citations - 64866
Andras Kis is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Monolayer & Semiconductor. The author has an hindex of 67, co-authored 165 publications receiving 53990 citations. Previous affiliations of Andras Kis include École Normale Supérieure & Lawrence Berkeley National Laboratory.
Papers
More filters
Water footprint in strategic water management at the urban level: the Urban_WFTP European project
Antonio Scipioni,Alessandro Manzardo,Andrea Loss,Valentina Rosa,Wiesław Fiałkiewicz,Stanisław Czaban,Anna Kolonko-Wiercik,Paweł Malinowski,Günther Leonhardt,Wolfgang Rauch,Christin Haida,Katrin Schneider,Stefan Neuner,Katharina Wohlfart,Robert Schmidt,Marco Vigo,Donato Bedin,Andras Kis,Valéria Szabó +18 more
Journal ArticleDOI
Electrical spectroscopy of defect states and their hybridization in monolayer MoS2
Yanfei Zhao,Mukesh Tripathi,Kristiāns Čerņevičs,Ahmet Avsar,Hyun Goo Ji,Juan Francisco Gonzalez Marin,Cheol-Yeon Cheon,Zhenyu Wang,Oleg V. Yazyev,Andras Kis +9 more
TL;DR: In this paper , the authors examined the electrical response of defect filling and emission using deep level transient spectroscopy (DLTS) and reveal defect states and their hybridization in a monolayer MOCVD-grown material deposited on CMOS-compatible substrates.
Posted Content
Super-resolved optical mapping of reactive sulfur-vacancy in 2D transition metal dichalcogenides
Miao Zhang,Martina Lihter,Michal Macha,Karla Banjac,Yanfei Zhao,Zhenyu Wang,Jing Zhang,Jean Comtet,Magalí Lingenfelder,Andras Kis,Aleksandra Radenovic +10 more
TL;DR: In this article, the authors demonstrate large area mapping of reactive sulfur-deficient defects in transition metal dichalcogenides (TMDs) coupling single-molecule localization microscopy with fluorescence labeling using thiol chemistry.
Posted Content
Numerical correction of anti-symmetric aberrations in single HRTEM images of weakly scattering 2D-objects
Ossi Lehtinen,Dorin Geiger,Zhongbo Lee,Michael Brian Whitwick,Mingwei Chen,Andras Kis,Ute Kaiser +6 more
TL;DR: In this paper, a numerical post-processing method for removing the effect of anti-symmetric residual aberrations in high-resolution transmission electron microscopy (HRTEM) images of weakly scattering 2D-objects is presented.
Journal ArticleDOI
On current transients in MoS2 Field Effect Transistors.
Massimo Macucci,Gerry Tambellini,Dmitry Ovchinnikov,Andras Kis,Giuseppe Iannaccone,Gianluca Fiori +5 more
TL;DR: There are at least two independent trapping mechanisms: trapping of charges in the silicon oxide substrate, occurring with time constants of the order of tens of seconds and involving charge motion orthogonal to the MoS2 sheet, and trapping at the channel surface, which occurs with much longer time constants, in particular when the device is in a vacuum.