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Andre K. Geim
Researcher at University of Manchester
Publications - 466
Citations - 232754
Andre K. Geim is an academic researcher from University of Manchester. The author has contributed to research in topics: Graphene & Magnetic field. The author has an hindex of 125, co-authored 445 publications receiving 206833 citations. Previous affiliations of Andre K. Geim include University of Nottingham & Russian Academy of Sciences.
Papers
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Journal ArticleDOI
Submicron probes for Hall magnetometry over the extended temperature range from helium to room temperature
Kostya S. Novoselov,Sergey V. Morozov,S. V. Dubonos,Mohamed Missous,A. O. Volkov,D. A. Christian,Andre K. Geim +6 more
TL;DR: In this paper, mesoscopic Hall sensors made from various materials and their suitability for accurate magnetization studies of submicron samples over a wide temperature range and, especially, at room temperature.
Journal ArticleDOI
Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures.
Matthew J. Hamer,Endre Tóvári,Mengjian Zhu,Michael Thompson,A. S. Mayorov,Jonathon Prance,Yongjin Lee,Richard P. Haley,Zakhar R. Kudrynskyi,Amalia Patanè,Daniel J. Terry,Zakhar D. Kovalyuk,Klaus Ensslin,Andrey V. Kretinin,Andre K. Geim,Roman V. Gorbachev +15 more
TL;DR: Strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating are demonstrated and gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts are reported, revealing multiple plateaus.
Journal ArticleDOI
Scattering of ballistic electrons at a mesoscopic spot of strong magnetic field
Kostya S. Novoselov,Andre K. Geim,S. V. Dubonos,Y.G. Cornelissens,François M. Peeters,Jan C. Maan +5 more
TL;DR: In this article, the authors report quenching of the Hall effect with increasing magnetic field confined in a micron-sized spot, which is explained by a rapid increase in the number of electrons that are scattered or quasilocalized by the magnetic region.
Patent
Transistor device and materials for making
TL;DR: In this article, the authors proposed an application related to graphene based heterostructures and transistor devices comprising graphene, which consisted of a first graphene layer, a spacer layer, and a third graphene layer.
Journal ArticleDOI
Transport of hydrogen isotopes through interlayer spacing in van der Waals crystals.
S. Hu,Kalon Gopinadhan,Alexander M. Rakowski,Mehdi Neek-Amal,Mehdi Neek-Amal,Mehdi Neek-Amal,Thomas Heine,Irina V. Grigorieva,Sarah J. Haigh,François M. Peeters,Andre K. Geim,M. Lozada-Hidalgo +11 more
TL;DR: In this paper, van der Waals gaps between atomic planes of layered crystals provide angstrom-size channels that make quantum confinement of protons apparent even at room temperature, even for the lightest atom, hydrogen.