Andreas De Groote

TL;DR: In this paper, the development of silicon and silicon nitride (Si3N4) integrated photonic integrated circuits for various spectroscopic sensing applications is presented, including waveguide-based absorption and Raman and surface enhanced Raman spectroscopy.

TL;DR: In this paper, the most recent progress in this field is reviewed, covering the integration approaches of III-V-to-silicon bonding, transfer printing, epitaxial growth and the use of colloidal quantum dots.

TL;DR: In this paper, the authors review the work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing and elaborate on the integration strategy and describe a broad range of devices realized on this platform.

TL;DR: This work presents the first III-V opto-electronic components transfer printed on and coupled to a silicon photonic integrated circuit, comparable to devices realized using a traditional die-to-wafer bonding method.

TL;DR: A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-bands.