Andreas Gällström

Bio: Andreas Gällström is an academic researcher from Linköping University. The author has contributed to research in topics: Photoluminescence & Electron paramagnetic resonance. The author has an hindex of 13, co-authored 34 publications receiving 402 citations. Previous affiliations of Andreas Gällström include Saab Automobile AB.

The Silicon Vacancy in SiC

Abstract: A model is presented for the silicon vacancy in SiC. The previously reported photoluminescence spectra in 4H and 6H SiC attributed to the silicon vacancy are in this model due to internal transitions in the negative charge state of the silicon vacancy. The magnetic resonance signals observed are due to the initial and final states of these transitions.

Identification and tunable optical coherent control of transition-metal spins in silicon carbide

Abstract: Color centers in wide-bandgap semiconductors are attractive systems for quantum technologies since they can combine long-coherent electronic spin and bright optical properties. Several suitable centers have been identified, most famously the nitrogen-vacancy defect in diamond. However, integration in communication technology is hindered by the fact that their optical transitions lie outside telecom wavelength bands. Several transition-metal impurities in silicon carbide do emit at and near telecom wavelengths, but knowledge about their spin and optical properties is incomplete. We present all-optical identification and coherent control of molybdenum-impurity spins in silicon carbide with transitions at near-infrared wavelengths. Our results identify spin S = 1/2 for both the electronic ground and excited state, with highly anisotropic spin properties that we apply for implementing optical control of ground-state spin coherence. Our results show optical lifetimes of ~60 ns and inhomogeneous spin dephasing times of ~0.3 μs, establishing relevance for quantum spin-photon interfacing. A study of defects in silicon carbide could enable the integration of quantum and standard telecommunications technologies. Defects in semiconductors are attractive systems for quantum technologies as quantum states can be prepared that have both long lifetimes and bright optical properties. Their optical transitions often lie outside of telecommunication wavelengths, however, which limit their potential use in and integration with standard communication technology. Tom Bosma from the University of Groningen and an international team of collaborators now show that they can optically control molybdenum defects in silicon carbide, which have transitions at the technologically important near-infrared wavelengths, showing that this is a promising platform for interfacing quantum and telecommunications technologies.

Identification and tunable optical coherent control of transition-metal spins in silicon carbide

Abstract: Color centers in wide-bandgap semiconductors are attractive systems for quantum technologies since they can combine long-coherent electronic spin and bright optical properties. Several suitable centers have been identified, most famously the nitrogen-vacancy defect in diamond. However, integration in communication technology is hindered by the fact that their optical transitions lie outside telecom wavelength bands. Several transition-metal impurities in silicon carbide do emit at and near telecom wavelengths, but knowledge about their spin and optical properties is incomplete. We present all-optical identification and coherent control of molybdenum-impurity spins in silicon carbide with transitions at near-infrared wavelengths. Our results identify spin $S=1/2$ for both the electronic ground and excited state, with highly anisotropic spin properties that we apply for implementing optical control of ground-state spin coherence. Our results show optical lifetimes of $\sim$60 ns and inhomogeneous spin dephasing times of $\sim$0.3 $\mu$s, establishing relevance for quantum spin-photon interfacing.

Excitation properties of the divacancy in 4H -SiC

Abstract: We investigate the quenching of the photoluminescence (PL) from the divacancy defect in $4H$-SiC consisting of a nearest-neighbor silicon and carbon vacancies. The quenching occurs only when the PL is excited below certain photon energies (thresholds), which differ for the four different inequivalent divacancy configurations in $4H$-SiC. An accurate theoretical ab initio calculation for the charge-transfer levels of the divacancy shows very good agreement between the position of the (0/\ensuremath{-}) level with respect to the conduction band for each divacancy configuration and the corresponding experimentally observed threshold, allowing us to associate the PL decay with conversion of the divacancy from neutral to negative charge state due to capture of electrons photoionized from other defects (traps) by the excitation. Electron paramagnetic resonance measurements are conducted in the dark and under excitation similar to that used in the PL experiments and shed light on the possible origin of traps in the different samples. A simple model built on this concept agrees well with the experimentally observed decay curves.

Theory of neutral divacancy in SiC : a defect for spintronics

Abstract: We investigate the neutral divacancy in SiC by means of first principles calculations and group theory analysis. We identify the nature of the PL transitions associated with this defect. We show that how the spin state may be manipulated optically in this defect.

When group-III nitrides go infrared: New properties and perspectives

Abstract: Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...

Material platforms for spin-based photonic quantum technologies

Abstract: A central goal in quantum optics and quantum information science is the development of quantum networks to generate entanglement between distributed quantum memories. Experimental progress relies on the quality and efficiency of the light–matter quantum interface connecting the quantum states of photons to internal states of quantum emitters. Quantum emitters in solids, which have properties resembling those of atoms and ions, offer an opportunity for realizing light–matter quantum interfaces in scalable and compact hardware. These quantum emitters require a material platform that enables stable spin and optical properties, as well as a robust manufacturing of quantum photonic circuits. Because no emitter system is yet perfect and different applications may require different properties, several light–matter quantum interfaces are being developed in various platforms. This Review highlights the progress in three leading material platforms: diamond, silicon carbide and atomically thin semiconductors. Atom-like quantum emitters in solids have emerged as promising building blocks for quantum information processing. In this Review, recent advances in three leading material platforms—diamond, silicon carbide and atomically thin semiconductors—are summarized, with a focus on applications in quantum networks

Coherent control of single spins in silicon carbide at room temperature

Abstract: Defects in silicon carbide have recently been proposed as bright single-photon sources. It is now shown that they can be used as sources of single electron spins having long coherence times at room temperature. Spins in solids are cornerstone elements of quantum spintronics1. Leading contenders such as defects in diamond2,3,4,5 or individual phosphorus dopants in silicon6 have shown spectacular progress, but either lack established nanotechnology or an efficient spin/photon interface. Silicon carbide (SiC) combines the strength of both systems5: it has a large bandgap with deep defects7,8,9 and benefits from mature fabrication techniques10,11,12. Here, we report the characterization of photoluminescence and optical spin polarization from single silicon vacancies in SiC, and demonstrate that single spins can be addressed at room temperature. We show coherent control of a single defect spin and find long spin coherence times under ambient conditions. Our study provides evidence that SiC is a promising system for atomic-scale spintronics and quantum technology.

A room temperature single photon source in silicon carbide

Abstract: We report the first observation of stable single photon sources in an electronic and photonic device-friendly material, silicon carbide (SiC). SiC is a viable material for implementing quantum communication, computation and photonic technologies.

Quantum computing with defects

Abstract: Identifying and designing physical systems for use as qubits, the basic units of quantum information, are critical steps in the development of a quantum computer. Among the possibilities in the solid state, a defect in diamond known as the nitrogen-vacancy (NV-1) center stands out for its robustness—its quantum state can be initialized, manipulated, and measured with high fidelity at room temperature. Here we describe how to systematically identify other deep center defects with similar quantum-mechanical properties. We present a list of physical criteria that these centers and their hosts should meet and explain how these requirements can be used in conjunction with electronic structure theory to intelligently sort through candidate defect systems. To illustrate these points in detail, we compare electronic structure calculations of the NV-1 center in diamond with those of several deep centers in 4H silicon carbide (SiC). We then discuss the proposed criteria for similar defects in other tetrahedrally coordinated semiconductors.