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Andreas Schenk

Researcher at ETH Zurich

Publications -  251
Citations -  6061

Andreas Schenk is an academic researcher from ETH Zurich. The author has contributed to research in topics: Quantum tunnelling & Monte Carlo method. The author has an hindex of 34, co-authored 240 publications receiving 5426 citations. Previous affiliations of Andreas Schenk include École Polytechnique Fédérale de Lausanne & Humboldt University of Berlin.

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Atomistic simulation of nanowires in the sp3d5s* tight-binding formalism: From boundary conditions to strain calculations

TL;DR: In this article, the transmission coefficients and the density of states of biased and unbiased Si and GaAs nanowires are simulated using the $s{p}^{3d}^{5}{s}^{*}$ empirical tight-binding method.
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Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation

TL;DR: An analytical model of the band gap narrowing (BGN) in silicon was derived from a non-selfconsistent finite-temperature full random-phase approximation (RPA) formalism as mentioned in this paper.
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A model for the field and temperature dependence of Shockley-Read-Hall lifetimes in silicon

TL;DR: In this article, the authors derived a simple analytical model for the field and temperature dependence of Shockley-Read-Hall lifetimes in silicon from a microscopic level, where the capture of carriers at recombination centers is assumed to be a multiphonon process.
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Rigorous theory and simplified model of the band-to-band tunneling in silicon

TL;DR: In this paper, the phonon-assisted band-to-band tunneling rate in crystalline silicon is calculated using the equilibrium Green's function formalism, and a simplified rate formula for the purpose of device simulation is derived from the general expression.
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Modeling and simulation of tunneling through ultra-thin gate dielectrics

TL;DR: In this paper, an approach for the transmission coefficient (TC) of a potential barrier that is modified by the image force is presented. But the model is based on a trapezoidal pseudobarrier and the barrier height is used as a free parameter and becomes a function of energy in balancing the actions.