Andres Cuevas

TL;DR: In this paper, a simple method for implementing the steady-state photoconductance technique for determining the minority-carrier lifetime of semiconductor materials is presented, using a contactless instrument.

TL;DR: In this article, the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity $n$-type and $p$)-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride was studied.

TL;DR: In this article, the authors review the dynamic field of crystalline silicon photovoltaics from a device-engineering perspective and give an up-to-date summary of promising recent pathways for further efficiency improvements and cost reduction employing novel carrierselective passivating contact schemes, as well as tandem multi-junction architectures, in particular those that combine silicon absorbers with organic-inorganic perovskite materials.

TL;DR: In this article, a new method for minority carrier lifetime determination using a contactless photoconductance instrument in a quasi-steady-state mode was proposed, which permits the use of simpler electronics and light sources, yet has the capability to measure lifetimes in the nanosecond to millisecond range.

TL;DR: In this article, a parameterization for band-to-band Auger recombination in silicon at 300 K was proposed, which accurately fits the available experimental lifetime data for arbitrary injection level and arbitrary dopant density, for both n-type and p-type dopants.