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Andrew J. Green
Researcher at Air Force Research Laboratory
Publications - 66
Citations - 2491
Andrew J. Green is an academic researcher from Air Force Research Laboratory. The author has contributed to research in topics: Field-effect transistor & Transistor. The author has an hindex of 17, co-authored 48 publications receiving 1603 citations. Previous affiliations of Andrew J. Green include Wright-Patterson Air Force Base & Wyle Laboratories.
Papers
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Journal ArticleDOI
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga 2 O 3 MOSFETs
Andrew J. Green,Kelson D. Chabak,Eric R. Heller,Robert C. Fitch,M. Baldini,Andreas Fiedler,Klaus Irmscher,Günter Wagner,Zbigniew Galazka,Stephen E. Tetlak,Antonio Crespo,Kevin D. Leedy,Gregg H. Jessen +12 more
TL;DR: In this article, a Sn-doped (100) $\beta $ -Ga2O3 epitaxial layer was grown via metal-organic vapor phase epitaxy onto a single-crystal, Mg-Doped semi-insulating (100, β)-Ga 2O3 substrate.
Journal ArticleDOI
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
Kelson D. Chabak,Neil Moser,Andrew J. Green,Dennis E. Walker,Stephen E. Tetlak,Eric R. Heller,Antonio Crespo,Robert C. Fitch,Jonathan McCandless,Kevin D. Leedy,M. Baldini,Günter Wagner,Zbigniew Galazka,Xiuling Li,Gregg H. Jessen +14 more
TL;DR: In this paper, a top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate was used to construct fin-array field effect transistors (finFETs).
Journal ArticleDOI
$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation
Andrew J. Green,Kelson D. Chabak,M. Baldini,Neil Moser,Ryan Gilbert,Robert C. Fitch,Günter Wagner,Zbigniew Galazka,Jonathan Mccandless,Antonio Crespo,Kevin D. Leedy,Gregg H. Jessen +11 more
TL;DR: Preliminary results indicate potential for monolithic or heterogeneous integration of power switch and RF devices using inline-formula LaTeX, as well as power gain, efficiency, and power-added efficiency of 0.23 W/mm, 5.1 dB, and 6.3%.
Journal ArticleDOI
Ge-Doped ${\beta }$ -Ga2O3 MOSFETs
Neil Moser,Jonathan McCandless,Antonio Crespo,Kevin D. Leedy,Andrew J. Green,Adam T. Neal,Shin Mou,Elaheh Ahmadi,James S. Speck,Kelson D. Chabak,Nathalia Peixoto,Gregg H. Jessen +11 more
TL;DR: In this paper, a Ge-doped Ga2O3 homoepitaxial material grown by molecular beam epitaxy on (010) Fe-Doped semi-insulating substrates was used for MOSFETs.
Journal ArticleDOI
Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs
Kelson D. Chabak,Jonathan McCandless,Neil Moser,Andrew J. Green,Krishnamurthy Mahalingam,Antonio Crespo,Nolan S. Hendricks,Brandon M. Howe,Stephen E. Tetlak,Kevin D. Leedy,Robert C. Fitch,Daiki Wakimoto,Kohei Sasaki,Akito Kuramata,Gregg H. Jessen +14 more
TL;DR: In this paper, a Si-doped homoepitaxial channel grown by molecular beam epitaxy was removed using a gate recess process to partially remove the epitaxial channels under the 1-μm gated region to fully deplete at ${V}_{\textsf {GS}}= 0$ V.