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Andrey O. Konstantinov

Other affiliations: Royal Institute of Technology
Bio: Andrey O. Konstantinov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Silicon carbide & Chemical vapor deposition. The author has an hindex of 14, co-authored 43 publications receiving 954 citations. Previous affiliations of Andrey O. Konstantinov include Royal Institute of Technology.

Papers
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Journal ArticleDOI
TL;DR: In this article, a hole to electron ionization coefficient ratio of up to 50 was observed for 4H SiC. This was attributed to the discontinuity of the conduction band for the direction along the c axis.
Abstract: Epitaxial p-n diodes in 4H SiC are fabricated showing a good uniformity of avalanche multiplication and breakdown. Peripheral breakdown is overcome using the positive angle beveling technique. Photomultiplication measurements were performed to determine electron and hole ionization rates. For the electric field parallel to the c-axis impact ionization is strongly dominated by holes. A hole to electron ionization coefficient ratio of up to 50 is observed. It is attributed to the discontinuity of the conduction band of 4H SiC for the direction along the c axis. Theoretical values of critical fields and breakdown voltages in 4H SiC are calculated using the ionization rates obtained.

394 citations

Journal ArticleDOI
TL;DR: In this paper, the authors used photomultiplication measurements to determine electron and hole ionization rates in 4H SiC and made a comparison between silicon carbide and gallium nitride.
Abstract: Epitaxial p-n diodes in 4H SiC are fabricated with uniform avalanche multiplication and breakdown. Photomultiplication measurements were performed to determine electron and hole ionization rates. Theoretical values of critical fields and breakdown voltages in 4H SiC are calculated using the ionization rates obtained. We discuss ionization mechanisms in 4H SiC and make a comparison between silicon carbide and gallium nitride.

94 citations

Journal ArticleDOI
TL;DR: In this article, the temperature dependence of the quantum efficiency of 4H-SiC Schottky structure has been investigated to determine the temperature stability and the mechanism of the photoelectric conversion process.
Abstract: Ultraviolet Schottky photodetectors based on n-4H–SiC (Nd − Na = 4 × 1015 cm−3) epitaxial layers of high purity have been fabricated. Their spectral sensitivity range is 3.2–5.3 eV peaking at 4.9 eV (quantum efficiency is about ~0.3 electron/photon), which is close to the bactericidal ultraviolet radiation spectrum. The temperature dependence of the quantum efficiency of 4H–SiC Schottky structure has been investigated to determine the temperature stability and the mechanism of the photoelectric conversion process. At low temperatures (78–175 K) the quantum efficiency increases with increasing temperature for all photon energy values and then tends to saturate. We suppose that some imperfections in the space-charge region act as traps that capture both photoelectrons and photoholes. After some time the trapped electron–hole pairs recombine due to the tunnelling effect. At high temperatures (more than 300 K), the second enhancement region of the quantum efficiency is observed in the photon energy range of 3.2–4.5 eV. It is connected with a phonon contribution to indirect optical transitions between the valence band and the M-point of the conduction band. When the photon energy is close to a direct optical transition threshold this enhancement region disappears. This threshold is estimated to be 4.9 eV. At photon energies more than 5 eV a drastic fall of the quantum efficiency has been observed throughout the temperature interval. We propose that in this case the photoelectrons and photoholes are bound to form hot excitons in the space-charge region due to the Brillouin zone singularity, and do not contribute to the following photoelectroconversion process.

46 citations

Journal ArticleDOI
TL;DR: In this paper, the temperature dependence of avalanche breakdown was investigated for uniform and microplasma-related breakdown in epitaxial 4H SiC p-n junctions, and it was shown that a negative temperature coefficient for the avalanche breakdown voltage can be observed even for 4HSiC SiC if the breakdown is dominated by microplasmas.
Abstract: The temperature dependence of avalanche breakdown is investigated for uniform and microplasma-related breakdown in epitaxial 4H SiC p-n junctions. P-n mesa diodes fabricated with positive angle beveling and oxide passivation can withstand temperatures of up to 300–400 °C in the breakdown regime. Uniform avalanche breakdown in 4H silicon carbide appears to have a positive temperature coefficient, in contrast to the 6H polytype, where the temperature coefficient is negative. The influence of deep levels on avalanche breakdown in epitaxial diodes is of minor importance for uniform breakdown, but appears to be significant for breakdown through microplasmas. A negative temperature coefficient for the avalanche breakdown voltage can be observed even for 4H SiC if the breakdown is dominated by microplasmas.

39 citations


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Journal ArticleDOI
TL;DR: In this article, the features and present status of SiC power devices are briefly described, and several important aspects of the material science and device physics of the SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed.
Abstract: Power semiconductor devices are key components in power conversion systems. Silicon carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable for high-voltage and low-loss power devices. Through recent progress in the crystal growth and process technology of SiC, the production of medium-voltage (600?1700 V) SiC Schottky barrier diodes (SBDs) and power metal?oxide?semiconductor field-effect transistors (MOSFETs) has started. However, basic understanding of the material properties, defect electronics, and the reliability of SiC devices is still poor. In this review paper, the features and present status of SiC power devices are briefly described. Then, several important aspects of the material science and device physics of SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed. Fundamental issues regarding SiC SBDs and power MOSFETs are also discussed.

750 citations

Journal ArticleDOI
13 Aug 2013-Sensors
TL;DR: A comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field are provided.
Abstract: Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications.

650 citations

Journal ArticleDOI
TL;DR: Development of 15-kV SiC IGBTs and their impact on utility applications is discussed, and the need for power semiconductor devices with high-voltage, high- frequency, and high-temperature operation capability is growing.
Abstract: The need for power semiconductor devices with high-voltage, high- frequency, and high-temperature operation capability is growing, especially for advanced power conversion and military applications, and hence the size and weight of the power electronic system are reduced. Development of 15-kV SiC IGBTs and their impact on utility applications is discussed.

252 citations

Journal ArticleDOI
TL;DR: In this paper, a comprehensive review of the properties of epitaxial 4H silicon carbide polytype (4H-SiC) is presented, with particular emphasis on those aspects of this material related to room, high-temperature and harsh environment ionizing radiation detector operation.
Abstract: We present a comprehensive review of the properties of the epitaxial 4H silicon carbide polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to room, high-temperature and harsh environment ionizing radiation detector operation. A review of the characterization methods and electrical contacting issues and how these are related to detector performance is presented. The most recent data on charge transport parameters across the Schottky barrier and how these are related to radiation spectrometer performance are presented. Experimental results on pixel detectors having equivalent noise energies of 144 eV FWHM (7.8 electrons rms) and 196 eV FWHM at +27 °C and +100 °C, respectively, are reported. Results of studying the radiation resistance of 4H–SiC are analysed. The data on the ionization energies, capture cross section, deep-level centre concentrations and their plausible structures formed in SiC as a result of irradiation with various particles are reviewed. The emphasis is placed on the study of the 1 MeV neutron irradiation, since these thermal particles seem to play the main role in the detector degradation. An accurate electrical characterization of the induced deep-level centres by means of PICTS technique has allowed one to identify which play the main role in the detector degradation.

247 citations