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Andrey Turchanin

Researcher at University of Jena

Publications -  177
Citations -  6488

Andrey Turchanin is an academic researcher from University of Jena. The author has contributed to research in topics: Graphene & Monolayer. The author has an hindex of 33, co-authored 139 publications receiving 5173 citations. Previous affiliations of Andrey Turchanin include Schiller International University & German National Metrology Institute.

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Three-Dimensional Nitrogen and Boron Co-doped Graphene for High-Performance All-Solid-State Supercapacitors

TL;DR: Several challenges remain in developing ASSSs, such as to: i) explore high-performance electrode materials, ii) enhance the interfacial compatibility between electrode and solid-state electrolyte, and iii) simplify the device fabrication process.
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Nitrogen-doped graphene and its iron-based composite as efficient electrocatalysts for oxygen reduction reaction.

TL;DR: It is found that NG supported with 5 wt % Fe nanoparticles displayed an excellent methanol crossover effect and high current density in an alkaline solution, and Fe-incorporated NG showed almost four-electron transfer processes and superior stability in both alkaline and acidic solutions, which outperformed the platinum and NG-based catalysts.
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On the influence of bandstructure on transport properties of magnetic tunnel junctions with Co2Mn1−xFexSi single and multilayer electrode

Abstract: The transport properties of magnetic tunnel junctions with different (110)-textured Heusler alloy electrodes such as Co2MnSi, Co2FeSi or Co2Mn0.5Fe0.5Si, AlOx barrier, and Co–Fe counterelectrode are investigated. The bandstructure of Co2Mn1−xFexSi is predicted to show a systematic shift in the position of the Fermi energy EF through the gap in the minority density of states while the composition changes from Co2MnSi toward Co2FeSi. Although this shift is indirectly observed by x-ray photoemission spectroscopy, all junctions show a large spin polarization of around 70% at the Heusler alloy/Al–O interface and are characterized by a very similar temperature and bias voltage dependence of the tunnel magnetoresistance. This suggests that these transport properties of these junctions are dominated by inelastic excitations and not by the electronic bandstructure.

Production and processing of graphene and related materials

Claudia Backes, +148 more
TL;DR: In this article, the authors present an overview of the main techniques for production and processing of graphene and related materials (GRMs), as well as the key characterization procedures, adopting a 'hands-on' approach, providing practical details and procedures as derived from literature and from the authors' experience, in order to enable the reader to reproduce the results.
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Layer‐by‐Layer Assembled Heteroatom‐Doped Graphene Films with Ultrahigh Volumetric Capacitance and Rate Capability for Micro‐Supercapacitors

TL;DR: Highly uniform, ultrathin, layer-by-layer heteroatom (N, B) co-doped graphene films are fabricated for high-performance on-chip planar micro-supercapacitors with an ultrahigh volumetric capacitance and excellent rate capability due to the synergistic effect of nitrogen and boron co-Doping.