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Andrzej Suchocki

Bio: Andrzej Suchocki is an academic researcher from Polish Academy of Sciences. The author has contributed to research in topics: Luminescence & Photoluminescence. The author has an hindex of 30, co-authored 278 publications receiving 3359 citations. Previous affiliations of Andrzej Suchocki include Autonomous University of Madrid & Oklahoma State University–Stillwater.


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TL;DR: The findings of the present Article offer a systematic overview of the structural properties of spinels and can serve as helpful guides for synthesis of new spinel compounds.
Abstract: A thorough consideration of the relation between the lattice parameters of 185 binary and ternary spinel compounds, on one side, and ionic radii and electronegativities of the constituting ions, on the other side, allowed for establishing a simple empirical model and finding its linear equation, which links together the above-mentioned quantities. The derived equation gives good agreement between the experimental and modeled values of the lattice parameters in the considered group of spinels, with an average relative error of about 1% only. The proposed model was improved further by separate consideration of several groups of spinels, depending on the nature of the anion (oxygen, sulfur, selenium/tellurium, nitrogen). The developed approach can be efficiently used for prediction of lattice constants for new isostructural materials. In particular, the lattice constants of new hypothetic spinels ZnRE2O4, CdRE2S4, CdRE2Se4 (RE=rare earth elements) are predicted in the present paper. In addition, the upper and lower limits for the variation of the ionic radii, electronegativities and certain their combinations were established, which can be considered as stability criteria for the spinel compounds. The findings of the present paper offer a systematic overview of the structural properties of spinels and can serve as helpful guides for synthesis of new spinel compounds.

108 citations

Journal ArticleDOI
TL;DR: In this paper, the photoluminescence properties of Mn4+ (3d3) ions in YAlO3 have been performed in the temperature range 10-600 K.
Abstract: Detailed investigations of the photoluminescence properties of Mn4+ (3d3) ions in YAlO3 have been performed in the temperature range 10–600 K. The luminescence of Mn4+ ions due to the transition consists of two zero-phonon lines (R lines) at 691.3 and 692.7 nm, which became visible only at low temperature, and their vibronic sidebands that cover the range of 660–740 nm. The thermal quenching of the luminescence intensity due to the non-radiative decay occurs at temperatures above 420 K. The temperature dependence of the luminescence decay time shows a quasi-linear decrease from τ = 4.9 to 1.6 ms in the temperature range from 90 to 420 K (with a temperature coefficient −0.01 ms K−1) that makes YAlO3:Mn a potentially good phosphor for a fibre optic fluorescence thermometer in this temperature range. The high-pressure low-temperature luminescence measurements in a diamond-anvil cell reveal similar pressure coefficients for Mn4+ and Cr3+ dopant ions in YAlO3, equal to 1.16 cm−1 kbar−1 and 1.08 cm−1 kbar−1, respectively.

102 citations

Journal ArticleDOI
TL;DR: In this paper, the thermoluminescent dosimetry properties of YAlO 3 :Mn crystals were studied for the detection of γ-radiation in the presence of ionizing radiation.
Abstract: The paper presents results on study of thermoluminescent dosimetry (TLD) properties of YAlO 3 :Mn crystals for dosimetry of γ-radiation. The TL emission at 530 nm from Mn 2+ ions has been used as a TL signal for detecting of γ-radiation. The studied YAlO 3 :Mn samples have shown a sensitivity to γ-radiation commensurable with commercial LiF:Mg, Ti. Since the YAlO 3 :Mn crystals exhibit linear dose response up to 1 kGy, it makes them a candidate for high-dose dosimetry of ionizing radiation.

78 citations

Journal ArticleDOI
TL;DR: In this paper, the relation between the lattice parameters of 185 binary and ternary spinel compounds, on one side, and ionic radii and electronegativities of the constituting ions, on the other side, allowed for establishing a simple empirical model and finding its linear equation.
Abstract: A thorough consideration of the relation between the lattice parameters of 185 binary and ternary spinel compounds, on one side, and ionic radii and electronegativities of the constituting ions, on the other side, allowed for establishing a simple empirical model and finding its linear equation, which links together the above-mentioned quantities. The derived equation gives good agreement between the experimental and modeled values of the lattice parameters in the considered group of spinels, with an average relative error of about 1% only. The proposed model was improved further by separate consideration of several groups of spinels, depending on the nature of the anion (oxygen, sulfur, selenium/tellurium, nitrogen). The developed approach can be efficiently used for prediction of lattice constants for new isostructural materials. In particular, the lattice constants of new hypothetic spinels ZnRE2O4, CdRE2S4, CdRE2Se4 (RE = rare earth elements) are predicted in the present Article. In addition, the uppe...

72 citations


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TL;DR: While the book is a standard fixture in most chemical and physical laboratories, including those in medical centers, it is not as frequently seen in the laboratories of physician's offices (those either in solo or group practice), and I believe that the Handbook can be useful in those laboratories.
Abstract: There is a special reason for reviewing this book at this time: it is the 50th edition of a compendium that is known and used frequently in most chemical and physical laboratories in many parts of the world. Surely, a publication that has been published for 56 years, withstanding the vagaries of science in this century, must have had something to offer. There is another reason: while the book is a standard fixture in most chemical and physical laboratories, including those in medical centers, it is not as frequently seen in the laboratories of physician's offices (those either in solo or group practice). I believe that the Handbook can be useful in those laboratories. One of the reasons, among others, is that the various basic items of information it offers may be helpful in new tests, either physical or chemical, which are continuously being published. The basic information may relate

2,493 citations

Journal ArticleDOI
TL;DR: Puurunen et al. as discussed by the authors summarized the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD.
Abstract: Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The deposition of a film of a given material by ALD relies on the successive, separated, and self-terminating gas–solid reactions of typically two gaseous reactants. Hundreds of ALD chemistries have been found for depositing a variety of materials during the past decades, mostly for inorganic materials but lately also for organic and inorganic–organic hybrid compounds. One factor that often dictates the properties of ALD films in actual applications is the crystallinity of the grown film: Is the material amorphous or, if it is crystalline, which phase(s) is (are) present. In this thematic review, we first describe the basics of ALD, summarize the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD [R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005)], and give an overview of the status of processing ternary compounds by ALD. We then proceed to analyze the published experimental data for information on the crystallinity and phase of inorganic materials deposited by ALD from different reactants at different temperatures. The data are collected for films in their as-deposited state and tabulated for easy reference. Case studies are presented to illustrate the effect of different process parameters on crystallinity for representative materials: aluminium oxide, zirconium oxide, zinc oxide, titanium nitride, zinc zulfide, and ruthenium. Finally, we discuss the general trends in the development of film crystallinity as function of ALD process parameters. The authors hope that this review will help newcomers to ALD to familiarize themselves with the complex world of crystalline ALD films and, at the same time, serve for the expert as a handbook-type reference source on ALD processes and film crystallinity.

1,160 citations

Journal ArticleDOI
TL;DR: The physicochemical characteristics of spinels such as their compositions, structures, morphologies, defects, and substrates have been rationally regulated through various approaches and can yield spinels with improved ORR/OER catalytic activities, which can further accelerate the speed, prolong the life, and narrow the polarization of fuel cells, metal-air batteries, and water splitting devices.
Abstract: Spinels with the formula of AB2O4 (where A and B are metal ions) and the properties of magnetism, optics, electricity, and catalysis have taken significant roles in applications of data storage, biotechnology, electronics, laser, sensor, conversion reaction, and energy storage/conversion, which largely depend on their precise structures and compositions. In this review, various spinels with controlled preparations and their applications in oxygen reduction/evolution reaction (ORR/OER) and beyond are summarized. First, the composition and structure of spinels are introduced. Then, recent advances in the preparation of spinels with solid-, solution-, and vapor-phase methods are summarized, and new methods are particularly highlighted. The physicochemical characteristics of spinels such as their compositions, structures, morphologies, defects, and substrates have been rationally regulated through various approaches. This regulation can yield spinels with improved ORR/OER catalytic activities, which can furth...

1,036 citations

Journal ArticleDOI
TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.
Abstract: Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...

871 citations

Journal ArticleDOI
TL;DR: In this paper, the state of the art in this rapidly growing field is discussed and new classes of materials that open up new possibilities for extended functionality and greater optoelectronic integration are described.

809 citations