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Anirban Bhattacharyya
Researcher at University of Calcutta
Publications - 116
Citations - 1437
Anirban Bhattacharyya is an academic researcher from University of Calcutta. The author has contributed to research in topics: Quantum well & Molecular beam epitaxy. The author has an hindex of 21, co-authored 102 publications receiving 1282 citations. Previous affiliations of Anirban Bhattacharyya include Boston University & Arizona State University.
Papers
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Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency
TL;DR: In this paper, the authors report the development of Al0.7Ga0.3N/AlN quantum wells with high internal quantum efficiency, where the III/V flux ratio was varied during growth by increasing the Ga flux.
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Ultraviolet detection using TiO2 nanowire array with Ag Schottky contact
P. Chinnamuthu,Jay Chandra Dhar,Aniruddha Mondal,Anirban Bhattacharyya,Naorem Khelchand Singh +4 more
TL;DR: In this article, the glancing angle deposition technique has been employed to synthesize TiO2 nanowire (NW) arrays which have been characterized by x-ray diffraction, field emission-scanning electron microscopy and high-resolution transmission electron microscope.
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Ultrafast all-optical switching with low saturation energy via intersubband transitions in GaN/AlN quantum-well waveguides
TL;DR: A fiber-optic pump-probe setup is used to demonstrate all-optical switching based on intersubband cross-absorption modulation in GaN/AlN quantum-well waveguides, with record low values of the required control pulse energy.
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Efficient p-type doping of GaN films by plasma-assisted molecular beam epitaxy
Anirban Bhattacharyya,Anirban Bhattacharyya,W. Li,W. Li,J. Cabalu,J. Cabalu,Theodore D. Moustakas,Theodore D. Moustakas,David J. Smith,Richard L. Hervig +9 more
TL;DR: In this article, the authors reported on the mechanism of efficient incorporation of Mg in GaN films during growth by plasma-assisted molecular beam epitaxy and found that Mg incorporated more efficiently during growth of GaN film at high temperatures (770 °C) under extreme Ga-rich conditions.
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Measurements and modelling of the barrier heights and ideality factors in the metal/conducting polymer composite Schottky device
TL;DR: In this paper, metal/polymer Schottky contacts have been fabricated using electrochemically prepared free standing thin films of conducting polyaniline/polycarbonate composite as well as conducting polyniline pellets with various metals such as Al, In, Pb and Sn.