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Aniruddha Ghosal

Bio: Aniruddha Ghosal is an academic researcher from University of Calcutta. The author has contributed to research in topics: Electron mobility & Scattering. The author has an hindex of 7, co-authored 42 publications receiving 161 citations.

Papers
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Proceedings ArticleDOI
16 Mar 2015
TL;DR: Simulated results indicate the superior performance of the proposed technique over conventional CMOS multiplier, which achieves a high speed low power design for the multiplier.
Abstract: In this paper, we propose a new technique for implementing a low power high speed multiplier using full adder consisting of minimum no. of transistors (8-T). Multiplier circuits are used comprehensively in Application Specific Integrated Circuits (ASICs). Thus it is desirable to have high speed operation for the sub components. The explored method of implementation achieves a high speed low power design for the multiplier. Simulated results indicate the superior performance of the proposed technique over conventional CMOS multiplier. Detailed comparison of simulated results for the conventional and present method of implementation is presented.

10 citations

Journal ArticleDOI
TL;DR: In this paper, the Griffith's Equation and inverse piezo electric effect were used to show how physical degradation affects electrical properties of the device and also how cracks are generated in AlGaN epitaxial layer.

9 citations

Journal ArticleDOI
TL;DR: In this paper, a model of a one-dimensional array of a ferroelectric slab of domains is explained by the Klein-Gordon equation, and a perturbation of the K-G equation makes it possible to use this continuum model through a progressive-wave nonlinear Schrodinger equation (NLSE), which gives rise to a bright soliton that moves with a certain velocity.
Abstract: In the framework of a simple model of a one-dimensional array of a ferroelectric slab of domains, the polarization with time and space is explained by the Klein-Gordon equation. A perturbation of the K-G equation makes it possible to use this continuum model through a progressive-wave nonlinear Schr\"odinger equation (NLSE). The latter gives rise to a bright soliton that moves with a certain velocity. The bright soliton controls itself so that both bright and dark solitons appear at the same time with discrete energy levels that are estimated from a hypergeometric function, but the dark soliton is not visible as it is part of the complex solution that indicates absorption of energy, i.e., the presence of an energy gap. The pulse width for switching of ferroelectrics can be estimated from the analysis of the NLSE and matches that calculated from this model.

9 citations

Journal ArticleDOI
TL;DR: In this article, the fetching of a single-flux scattering theory of the InAs nanowire based MOSFET has been presented and the backscattering coefficient has been studied for 1, 5, and 10-nm radius.

8 citations

Journal ArticleDOI
TL;DR: In this paper, a calculation of electron mobility in heavily doped compensated polar semiconductors is presented including lattice scattering as well as scattering from point-impurity charges and from the hitherto neglected dipoles formed by the donor-acceptor pairs.
Abstract: A calculation of electron mobility in heavily doped compensated polar semiconductors is presented including lattice scattering as well as scattering from point-impurity charges and from the hitherto neglected dipoles formed by the donor-acceptor pairs. Comparison with experimental data for GaAs doped heavily with Si gives evidence that the consideration of dipoles is essential in accounting for the electron transport.

8 citations


Cited by
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Journal ArticleDOI
TL;DR: A comprehensive review of the continuing efforts in exploring semiconductor nanowires for the assembly of functional nanoscale electronics and macroelectronics, including a unique design of solution-processable nanowire thin-film transistors for high-performance large-area flexible electronics.
Abstract: Semiconductor nanowires have attracted extensive interest as one of the best-defined classes of nanoscale building blocks for the bottom-up assembly of functional electronic and optoelectronic devices over the past two decades. The article provides a comprehensive review of the continuing efforts in exploring semiconductor nanowires for the assembly of functional nanoscale electronics and macroelectronics. Specifically, we start with a brief overview of the synthetic control of various semiconductor nanowires and nanowire heterostructures with precisely controlled physical dimension, chemical composition, heterostructure interface, and electronic properties to define the material foundation for nanowire electronics. We then summarize a series of assembly strategies developed for creating well-ordered nanowire arrays with controlled spatial position, orientation, and density, which are essential for constructing increasingly complex electronic devices and circuits from synthetic semiconductor nanowires. Next, we review the fundamental electronic properties and various single nanowire transistor concepts. Combining the designable electronic properties and controllable assembly approaches, we then discuss a series of nanoscale devices and integrated circuits assembled from nanowire building blocks, as well as a unique design of solution-processable nanowire thin-film transistors for high-performance large-area flexible electronics. Last, we conclude with a brief perspective on the standing challenges and future opportunities.

189 citations

Journal ArticleDOI
J.H. Neave1, P.J. Dobson1, J.J. Harris1, Philip Dawson1, B.A. Joyce1 
TL;DR: In this article, two concentration ranges of silicon doping in MBE-grown GaAs films have been investigated in some detail, and the maximum free-electron concentration of ≈7×1018 cm−3 has been obtained, which is only rather weakly dependent on growth conditions and the nature of the arsenic species.
Abstract: Two concentration ranges of silicon doping in MBE-grown GaAs films have been investigated in some detail. In lightly doped films, with a free-electron concentration of ≈1016cm−3, low-temperature photoluminescence spectra have been analysed to develop a model to account for spectral features previously attributed to Ge and Si acceptor levels. In heavily doped films, a maximum free-electron concentration of ≈7×1018 cm−3 has been obtained, which is only rather weakly dependent on growth conditions and the nature of the arsenic species (As2 or As4). Transmission electron microscopy has shown that no significant precipitation effects occur when higher Si fluxes are used but there is evidence for autocompensation. The maximum PL intensity (300 K) is found at a lower free electron concentration then with Sn-doped films, and is more sharply peaked, but there is no evidence for an anomalous Moss-Burstein shift.

75 citations