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Anna Szwajca
Researcher at Adam Mickiewicz University in Poznań
Publications - 29
Citations - 317
Anna Szwajca is an academic researcher from Adam Mickiewicz University in Poznań. The author has contributed to research in topics: Chemistry & Deprotonation. The author has an hindex of 9, co-authored 26 publications receiving 248 citations. Previous affiliations of Anna Szwajca include Braunschweig University of Technology.
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Zinc oxide as a defect-dominated material in thin films for photovoltaic applications – experimental determination of defect levels, quantification of composition, and construction of band diagram
TL;DR: The detailed analysis of lab-recorded photoemission spectra in combination with Kelvin probe data yielded the work function, ionization energy, and valence band - Fermi level separation - and hence enabled the construction of band diagrams of the examined layers.
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Self-assembled monolayers of alkyl-thiols on InAs: A Kelvin probe force microscopy study
TL;DR: In this article, the authors reported the preparation and characterization of self-assembled monolayers from aliphatic thiols with different chain length and termination on InAs (100) planar surfaces.
Journal Article
Triclosan Encapsulated in Poli(L,L-lactide) as a Carrier of Antibacterial Properties of Textiles
B. Goetzendorf–Grabowska,H. Królikowska,Piotr Andrzej Bąk,Mariusz Gadzinowski,Bogumił Brycki,Anna Szwajca +5 more
TL;DR: In this article, a spraying device can automatically regulate: n the amount of suspension introduced, and n the speed of shifting the spraying jet and the substrate carrier, which can also be controlled.
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Detection of intra-band gap defects states in spin-coated sol-gel SnOx nanolayers by photoelectron spectroscopies
Lucyna Grządziel,Maciej Krzywiecki,Maciej Krzywiecki,Anna Szwajca,Adnan Sarfraz,Georgi Genchev,Andreas Erbe,Andreas Erbe +7 more
TL;DR: In this paper, the presence of gap defects states for ultra-thin tin dioxide (SnOx; 1 < x < 2) is crucial for efficient manufacturing of multipurpose electronic devices based on transparent conducting oxides.
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Conductance Enhancement of InAs/InP Heterostructure Nanowires by Surface Functionalization with Oligo(phenylene vinylene)s
M. I. Schukfeh,Kristian Storm,Ahmed Mahmoud,Roar R. Søndergaard,Anna Szwajca,Allan Hansen,Peter Hinze,Thomas Weimann,Sofia Fahlvik Svensson,Achyut Bora,Achyut Bora,Kimberly A. Dick,Claes Thelander,Frederik C. Krebs,Paolo Lugli,Lars Samuelson,Marc Tornow,Marc Tornow +17 more
TL;DR: A pronounced, nonlinear I-V characteristic is observed with significantly increased currents of up to 1 μA at 1 V bias, for a back-gate voltage of 3 V, supported by the model calculations based on a nonequilibrium Green Function approach.