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Annelies Delabie
Researcher at Katholieke Universiteit Leuven
Publications - 255
Citations - 5963
Annelies Delabie is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Atomic layer deposition & High-κ dielectric. The author has an hindex of 38, co-authored 238 publications receiving 5438 citations. Previous affiliations of Annelies Delabie include IMEC & ExxonMobil.
Papers
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Journal ArticleDOI
Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge
G. Agostinelli,Annelies Delabie,Petko Vitanov,Z. Alexieva,Harold Dekkers,S. De Wolf,Guy Beaucarne +6 more
TL;DR: In this paper, surface recombination velocities as low as 10 cm/s have been obtained by treated atomic layer deposition (ALD) of Al 2 O 3 layers on p-type CZ silicon wafers.
Journal ArticleDOI
Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
Annelies Delabie,Florence Bellenger,Michel Houssa,Thierry Conard,Sven Van Elshocht,Matty Caymax,Marc Heyns,Marc Meuris +7 more
TL;DR: In this paper, high-k dielectric layers on GeO2, grown at 350-450°C in O2, were deposited by atomic layer deposition (ALD), and ZrO2 and HfO2 intermix during ALD, together with partial reduction of Ge4+.
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High-k dielectrics for future generation memory devices (Invited Paper)
Jorge A. Kittl,Karl Opsomer,Mihaela Popovici,Nicolas Menou,Ben Kaczer,X.P. Wang,Christoph Adelmann,M. A. Pawlak,K. Tomida,Aude Rothschild,Bogdan Govoreanu,Robin Degraeve,Marc Schaekers,Mohammed Zahid,Annelies Delabie,Johan Meersschaut,Wouter Polspoel,Sergiu Clima,Geoffrey Pourtois,Werner Knaepen,Christophe Detavernier,Valery V. Afanas'ev,Tom E. Blomberg,Dieter Pierreux,J. Swerts,P. Fischer,J. W. Maes,D. Manger,Wilfried Vandervorst,Thierry Conard,Alexis Franquet,Paola Favia,Hugo Bender,Bert Brijs,S. Van Elshocht,Malgorzata Jurczak,J. Van Houdt,Dirk Wouters +37 more
TL;DR: The requirements and development of high-k dielectric films for application in storage cells of future generation flash and dynamic random access memory (DRAM) devices are reviewed in this article.
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CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon
M. Van Hove,S. Boulay,Sandeep R. Bahl,Steve Stoffels,Xuanwu Kang,Dirk Wellekens,Karen Geens,Annelies Delabie,Stefaan Decoutere +8 more
TL;DR: In this paper, a novel Au-free CMOS process compatible process for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors is presented.
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Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy
Riikka L. Puurunen,Wilfried Vandervorst,W. F. A. Besling,Olivier Richard,Hugo Bender,Thierry Conard,Chao Zhao,Annelies Delabie,Matty Caymax,Stefan De Gendt,Marc Heyns,Minna Viitanen,Marco de Ridder,HH Hidde Brongersma,Y. Tamminga,T. Dao,Toon de Win,Marcel A. Verheijen,Monja Kaiser,Marko Tuominen +19 more
TL;DR: In this article, the growth mode of the zirconium tetrachloride and trimethyl aluminum ∕water ALD process on hydrogen-terminated silicon was investigated by combining information on the total amount of material deposited with information on surface fraction of the material.