Anthony N. Caruso

Bio: Anthony N. Caruso is an academic researcher from University of Missouri–Kansas City. The author has contributed to research in topics: Boron carbide & Amorphous solid. The author has an hindex of 24, co-authored 125 publications receiving 2744 citations. Previous affiliations of Anthony N. Caruso include Kansas State University & ASTRON.

Robust isothermal electric control of exchange bias at room temperature

Abstract: Voltage-controlled spin electronics is crucial for continued progress in information technology. It aims at reduced power consumption, increased integration density and enhanced functionality where non-volatile memory is combined with high-speed logical processing. Promising spintronic device concepts use the electric control of interface and surface magnetization. From the combination of magnetometry, spin-polarized photoemission spectroscopy, symmetry arguments and first-principles calculations, we show that the (0001) surface of magnetoelectric Cr(2)O(3) has a roughness-insensitive, electrically switchable magnetization. Using a ferromagnetic Pd/Co multilayer deposited on the (0001) surface of a Cr(2)O(3) single crystal, we achieve reversible, room-temperature isothermal switching of the exchange-bias field between positive and negative values by reversing the electric field while maintaining a permanent magnetic field. This effect reflects the switching of the bulk antiferromagnetic domain state and the interface magnetization coupled to it. The switchable exchange bias sets in exactly at the bulk Neel temperature.

Robust isothermal electric switching of interface magnetization: A route to voltage-controlled spintronics

Abstract: Roughness-insensitive and electrically controllable magnetization at the (0001) surface of antiferromagnetic chromia is observed using magnetometry and spin-resolved photoemission measurements and explained by the interplay of surface termination and magnetic ordering. Further, this surface in placed in proximity with a ferromagnetic Co/Pd multilayer film. Exchange coupling across the interface between chromia and Co/Pd induces an electrically controllable exchange bias in the Co/Pd film, which enables a reversible isothermal (at room temperature) shift of the global magnetic hysteresis loop of the Co/Pd film along the magnetic field axis between negative and positive values. These results reveal the potential of magnetoelectric chromia for spintronic applications requiring non-volatile electric control of magnetization.

The physics of solid-state neutron detector materials and geometries

Abstract: Detection of neutrons, at high total efficiency, with greater resolution in kinetic energy, time and/or real-space position, is fundamental to the advance of subfields within nuclear medicine, high-energy physics, non-proliferation of special nuclear materials, astrophysics, structural biology and chemistry, magnetism and nuclear energy. Clever indirect-conversion geometries, interaction/transport calculations and modern processing methods for silicon and gallium arsenide allow for the realization of moderate- to high-efficiency neutron detectors as a result of low defect concentrations, tuned reaction product ranges, enhanced effective omnidirectional cross sections and reduced electron–hole pair recombination from more physically abrupt and electronically engineered interfaces. Conversely, semiconductors with high neutron cross sections and unique transduction mechanisms capable of achieving very high total efficiency are gaining greater recognition despite the relative immaturity of their growth, lithographic processing and electronic structure understanding. This review focuses on advances and challenges in charged-particle-based device geometries, materials and associated mechanisms for direct and indirect transduction of thermal to fast neutrons within the context of application. Calorimetry- and radioluminescence-based intermediate processes in the solid state are not included.

The all boron carbide diode neutron detector: Comparison with theory

Abstract: A boron carbide diode detector, fabricated from two different polytypes of semiconducting boron carbide, will detect neutrons in reasonable agreement with theory. Small deviations from the model calculations occur due to the detection efficiencies of the 10 B capture products Li plus α sum signal differing somewhat from expectation in the thin diodes. The performance of the all boron carbide neutron detector does depart from the behavior of devices where a boron rich neutron capture layer is distinct from the diode charge collection region (i.e. a conversion layer solid state detector), as is expected.

The Design and Analysis of Experiments

Abstract: THE DESIGN AND ANALYSIS OF EXPERIMENTS. By Oscar Kempthorne. New York, John Wiley and Sons, Inc., 1952. 631 pp. $8.50. This book by a teacher of statistics (as well as a consultant for \"experimenters\") is a comprehensive study of the philosophical background for the statistical design of experiment. It is necessary to have some facility with algebraic notation and manipulation to be able to use the volume intelligently. The problems are presented from the theoretical point of view, without such practical examples as would be helpful for those not acquainted with mathematics. The mathematical justification for the techniques is given. As a somewhat advanced treatment of the design and analysis of experiments, this volume will be interesting and helpful for many who approach statistics theoretically as well as practically. With emphasis on the \"why,\" and with description given broadly, the author relates the subject matter to the general theory of statistics and to the general problem of experimental inference. MARGARET J. ROBERTSON

Ferromagnetic materials

Abstract: In this chapter, we will restrict our attention to the ferrites and a few other closely related materials. The great interest in ferrites stems from their unique combination of a spontaneous magnetization and a high electrical resistivity. The observed magnetization results from the difference in the magnetizations of two non-equivalent sub-lattices of the magnetic ions in the crystal structure. Materials of this type should strictly be designated as “ferrimagnetic” and in some respects are more closely related to anti-ferromagnetic substances than they are to ferromagnetics in which the magnetization results from the parallel alignment of all the magnetic moments present. We shall not adhere to this special nomenclature except to emphasize effects, which are due to the existence of the sub-lattices.

Antiferromagnetic spintronics

Abstract: Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics and are capable of generating large magneto-transport effects Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed Antiferromagnetic spintronics started out with studies on spin transfer, and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics Central to these endeavors are the need for predictive models, relevant disruptive materials and new experimental designs This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials It also details some of the remaining bottlenecks and suggests possible avenues for future research

Topological Insulator Materials

Abstract: Topological insulators represent a new quantum state of matter which is characterized by peculiar edge or surface states that show up due to a topological character of the bulk wave functions. This review presents a pedagogical account on topological insulator materials with an emphasis on basic theory and materials properties. After presenting a historical perspective and basic theories of topological insulators, it discusses all the topological insulator materials discovered as of May 2013, with some illustrative descriptions of the developments in materials discoveries in which the author was involved. A summary is given for possible ways to confirm the topological nature in a candidate material. Various synthesis techniques as well as the defect chemistry that are important for realizing bulk-insulating samples are discussed. Characteristic properties of topological insulators are discussed with an emphasis on transport properties. In particular, the Dirac fermion physics and the resulting peculiar qu...

Colloquium : Topological band theory

Abstract: First-principles band theory, properly augmented by topological considerations, has provided a remarkably successful framework for predicting new classes of topological materials. This Colloquium discusses the underpinnings of the topological band theory and its materials applications.