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Antonio Facchetti

Researcher at Northwestern University

Publications -  636
Citations -  58947

Antonio Facchetti is an academic researcher from Northwestern University. The author has contributed to research in topics: Organic semiconductor & Thin-film transistor. The author has an hindex of 111, co-authored 602 publications receiving 51885 citations. Previous affiliations of Antonio Facchetti include Northwest University (United States) & Bosch.

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A high-mobility electron-transporting polymer for printed transistors

TL;DR: A highly soluble and printable n-channel polymer exhibiting unprecedented OTFT characteristics under ambient conditions in combination with Au contacts and various polymeric dielectrics is reported and all-printed polymeric complementary inverters have been demonstrated.
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π-Conjugated Polymers for Organic Electronics and Photovoltaic Cell Applications†

TL;DR: In this article, a review of π-conjugated polymeric semiconductors for organic thin-film (or field effect) transistors (OTFTs or OFETs) and bulk-heterojunction photovoltaic (or solar) cell (BHJ-OPV or OSC) applications are summarized and analyzed.
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Rylene and related diimides for organic electronics.

TL;DR: In this review, recent developments in the area of high-electron-mobility diimides based on rylenes and related aromatic cores, particularly perylene- and naphthalene-diimide-based small molecules and polymers, for application in high-performance organic field-effect transistors and photovoltaic cells are summarized and analyzed.
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Metal oxides for optoelectronic applications

TL;DR: This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin- film transistors, solar cells, diodes and memories.
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Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing

TL;DR: Combustion processing is now reported as a new low-temperature route for the deposition of diverse metal oxide films, and high-performance transistors are demonstrated using this method as discussed by the authors.