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Antonio J. Garcia-Loureiro
Researcher at University of Santiago de Compostela
Publications - 172
Citations - 1357
Antonio J. Garcia-Loureiro is an academic researcher from University of Santiago de Compostela. The author has contributed to research in topics: Monte Carlo method & Finite element method. The author has an hindex of 16, co-authored 167 publications receiving 1076 citations. Previous affiliations of Antonio J. Garcia-Loureiro include University of the Sciences & Polytechnic University of Catalonia.
Papers
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Journal ArticleDOI
FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability
Daniel Nagy,Guillermo Indalecio,Antonio J. Garcia-Loureiro,Muhammad A. Elmessary,Karol Kalna,Natalia Seoane +5 more
TL;DR: In this article, the performance, scalability, and resilience of Si SOI FinFETs and gate-all-around (GAA) nanowires (NWs) are studied using in-house-built 3D simulation tools.
Journal ArticleDOI
Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors
Antonio J. Garcia-Loureiro,Natalia Seoane,Manuel Aldegunde,R. Valin,Asen Asenov,Antonio Martinez,Karol Kalna +6 more
TL;DR: Test simulations of a 1-D metal-oxide semiconductor diode demonstrate that the DG approach discretized using the new, second-order differential (SOD) scheme can be accurately calibrated against Schrödinger-Poisson calculations exhibiting lower discretization error than the previous schemes when using coarse grids.
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Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes
Daniel Nagy,Gabriel Espineira,Guillermo Indalecio,Antonio J. Garcia-Loureiro,Karol Kalna,Natalia Seoane +5 more
TL;DR: Nanosheet (NS) and nanowire FET architectures scaled to a gate length of 16 nm and below are benchmarked against equivalent FinFETs and the NW FET becomes the most promising architecture offering an almost ideal sub-threshold swing.
Journal ArticleDOI
Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI
Carlos Sampedro,Francisco Gamiz,Andres Godoy,R. Valin,Antonio J. Garcia-Loureiro,Francisco G. Ruiz,Francisco G. Ruiz +6 more
TL;DR: In this article, the role of different confinement and transport directions in the characteristics of next generation DGSOI devices using a Multi-Subband Ensemble Monte Carlo simulator (MSB-EMC).
Journal ArticleDOI
Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET
Natalia Seoane,Guillermo Indalecio,E. Comesana,Manuel Aldegunde,Antonio J. Garcia-Loureiro,Karol Kalna +5 more
TL;DR: A 3-D quantum-corrected drift-diffusion (DD) simulation study of three sources of statistical variability, including discrete random dopants, line-edge roughness (LER), and metal gate workfunction (MGW) was performed for a 14-nm gate length FinFET in the subthreshold region using Fermi-Dirac statistics.