Author

# Antonio Polimeni

Other affiliations: University of Marburg, University of Nottingham, University of Florence ...read more

Bio: Antonio Polimeni is an academic researcher from Sapienza University of Rome. The author has contributed to research in topics: Photoluminescence & Quantum dot. The author has an hindex of 37, co-authored 253 publications receiving 4230 citations. Previous affiliations of Antonio Polimeni include University of Marburg & University of Nottingham.

Topics: Photoluminescence, Quantum dot, Band gap, Exciton, Hydrogen

##### Papers published on a yearly basis

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206 citations

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TL;DR: In this paper, the authors studied the photoluminescence properties of single quantum wells emitting at room temperature in the wavelength range λ=(1.3 −1.55)μm.

Abstract: InxGa1−xAs1−yNy/GaAs single quantum wells emitting at room temperature in the wavelength range λ=(1.3–1.55) μm have been studied by photoluminescence (PL). By increasing temperature, we find that samples containing nitrogen have a luminescence thermal stability and a room temperature emission efficiency higher than that of the corresponding N-free heterostructures. The temperature dependence of the PL line shape shows a progressive carrier detrapping from localized to extended states as T is increased. Finally, the extent of the thermal shift of the free exciton energy for different y indicates that the electron band edge has a localized character which increases with nitrogen content.

104 citations

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TL;DR: In this paper, the effect of defect levels on the alloy conduction band structure is strongly dependent on the relative energy of the defect levels and the host conduction bands edge, and it is shown that N-related defect levels lie close to the conduction minimum in disordered GaPN alloys, and will therefore strongly perturb the lowest conduction states in this alloy.

Abstract: The band-anticrossing (BAC) model has been widely applied to analyse the electronic structure of dilute nitride III-V-N alloys such as GaNxAs1−x. The BAC model describes the strong band gap bowing observed at low N composition in GaNxAs1−x in terms of an interaction between the GaAs host matrix conduction band edge and a higher lying band of localized N resonant states. In practice, replacing As by N introduces a range of N-related defect levels, associated with isolated N atoms, N–N pairs and larger clusters of N atoms. We show that the effect of such defect levels on the alloy conduction band structure is strongly dependent on the relative energy of the defect levels and the host conduction band edge. We first consider GaNxAs1−x, where we show that the unexpectedly large electron effective mass and gyromagnetic ratio, and their non-monotonic variation with x, are due to hybridization between the conduction band edge and specific nitrogen states close to the band edge. The N-related defect levels lie below the conduction band edge in GaNxP1−x. We must therefore explicitly treat the interaction between the higher lying GaP host Γ conduction band minimum and defect states associated with a random distribution of N atoms in order to obtain a good description of the lowest conduction states in disordered GaPN alloys. Turning to other alloys, N-related defect levels should generally lie well above the conduction band minimum in InNSb, with the band dispersion of InNSb then well described by a two-level BAC model. Both InP and InAs are intermediate between InSb and GaAs. By contrast, we calculate that N-related defect levels lie close to the conduction band minimum in GaNSb, and will therefore strongly perturb the lowest conduction states in this alloy. Overall, we conclude that the BAC model provides a good qualitative explanation of the electronic properties of dilute nitride alloys, but that it is in many cases necessary to include the details of the distribution of N-related defect levels to obtain a quantitative understanding of the conduction band structure in dilute nitride alloys.

97 citations

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23 Jan 2020TL;DR: In this article, the effects of high strain on the optoelectronic properties of 2D crystals were investigated and the possibility to induce a clear-cut crossover from direct to indirect bandgap in strained monolayers was demonstrated.

Abstract: This paper reports the effects of high strains on the optoelectronic properties of 2D crystals. By realizing micro- and nano-domes made of single layer transition-metal dichalcogenides, the authors demonstrate the possibility to induce a clear-cut crossover from direct to indirect bandgap in strained monolayers. The indirect excitons can be harvested and potentially stored for long times, which is relevant for flexible photovoltaics devices and for inducing bosonic condensation.

94 citations

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TL;DR: In this article, the electronic properties of GaAs1−xBix were investigated by photoluminescence at variable temperature (T=10−430K) and high magnetic field (B=0-30T).

Abstract: We investigate the electronic properties of GaAs1−xBix by photoluminescence at variable temperature (T=10–430K) and high magnetic field (B=0–30T). In GaAs0.981Bi0.019, localized state contribution to PL is dominant up to 150K. At T=180K the diamagnetic shift of the free-exciton states reveals a sizable increase in the carrier effective mass with respect to GaAs. Such an increase cannot be accounted for by an enhanced localized character of the valence band states, solely. Instead, it suggests that also the Bloch states of the conduction band are heavily affected by the presence of bismuth atoms.

90 citations

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TL;DR: There is, I think, something ethereal about i —the square root of minus one, which seems an odd beast at that time—an intruder hovering on the edge of reality.

Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.
Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

33,785 citations

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TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.

Abstract: We present a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III–V semiconductors that have been investigated to date. The two main classes are: (1) “conventional” nitrides (wurtzite and zinc-blende GaN, InN, and AlN, along with their alloys) and (2) “dilute” nitrides (zinc-blende ternaries and quaternaries in which a relatively small fraction of N is added to a host III–V material, e.g., GaAsN and GaInAsN). As in our more general review of III–V semiconductor band parameters [I. Vurgaftman et al., J. Appl. Phys. 89, 5815 (2001)], complete and consistent parameter sets are recommended on the basis of a thorough and critical review of the existing literature. We tabulate the direct and indirect energy gaps, spin-orbit and crystal-field splittings, alloy bowing parameters, electron and hole effective masses, deformation potentials, elastic constants, piezoelectric and spontaneous polarization coefficients, as well as heterostructure band offsets. Temperature an...

2,525 citations

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TL;DR: In this article, the time dependence of ρ11, ρ22 and ρ12 under steady-state conditions was analyzed under a light field interaction V = -μ12Ee iωt + c.c.

Abstract: (b) Write out the equations for the time dependence of ρ11, ρ22, ρ12 and ρ21 assuming that a light field interaction V = -μ12Ee iωt + c.c. couples only levels |1> and |2>, and that the excited levels exhibit spontaneous decay. (8 marks) (c) Under steady-state conditions, find the ratio of populations in states |2> and |3>. (3 marks) (d) Find the slowly varying amplitude ̃ ρ 12 of the polarization ρ12 = ̃ ρ 12e iωt . (6 marks) (e) In the limiting case that no decay is possible from intermediate level |3>, what is the ground state population ρ11(∞)? (2 marks) 2. (15 marks total) In a 2-level atom system subjected to a strong field, dressed states are created in the form |D1(n)> = sin θ |1,n> + cos θ |2,n-1> |D2(n)> = cos θ |1,n> sin θ |2,n-1>

1,872 citations

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TL;DR: In this article, the authors employed first principles density functional theory calculations to explore the mechanical properties of phosphorene, including ideal tensile strength and critical strain, and they found that a monolayer polysilicon can sustain tensile strain up to 27% and 30% in the zigzag and armchair directions, respectively.

Abstract: Recently, fabricated two dimensional (2D) phosphorene crystal structures have demonstrated great potential in applications of electronics. Mechanical strain was demonstrated to be able to significantly modify the electronic properties of phosphorene and few-layer black phosphorus. In this work, we employed first principles density functional theory calculations to explore the mechanical properties of phosphorene, including ideal tensile strength and critical strain. It was found that a monolayer phosphorene can sustain tensile strain up to 27% and 30% in the zigzag and armchair directions, respectively. This enormous strain limit of phosphorene results from its unique puckered crystal structure. We found that the tensile strain applied in the armchair direction stretches the pucker of phosphorene, rather than significantly extending the P-P bond lengths. The compromised dihedral angles dramatically reduce the required strain energy. Compared to other 2D materials, such as graphene, phosphorene demonstrates superior flexibility with an order of magnitude smaller Young's modulus. This is especially useful in practical large-magnitude-strain engineering. Furthermore, the anisotropic nature of phosphorene was also explored. We derived a general model to calculate the Young's modulus along different directions for a 2D system.

951 citations

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TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.

Abstract: Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...

871 citations