A
Antti Jaakkola
Researcher at VTT Technical Research Centre of Finland
Publications - 47
Citations - 1485
Antti Jaakkola is an academic researcher from VTT Technical Research Centre of Finland. The author has contributed to research in topics: Resonator & Resonance. The author has an hindex of 14, co-authored 47 publications receiving 1360 citations. Previous affiliations of Antti Jaakkola include University of Innsbruck & Helsinki University of Technology.
Papers
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Journal ArticleDOI
Evidence for efimov quantum states in an ultracold gas of caesium atoms
T. Kraemer,Manfred J. Mark,P. Waldburger,Johann G. Danzl,Cheng Chin,Cheng Chin,B. Engeser,A. D. Lange,K. Pilch,Antti Jaakkola,Hanns-Christoph Nägerl,Rudolf Grimm,Rudolf Grimm +12 more
TL;DR: In this article, the Efimov trimer state was shown to exist in an ultracold gas of caesium atoms and its signature was observed as a giant three-body recombination loss when the strength of the two-body interaction is varied.
Journal ArticleDOI
Analysis of anchor and interface losses in piezoelectric MEMS resonators
TL;DR: In this article, the authors present a numerical study on anchor and interfacial dissipation in piezoelectric MEMS resonators with in-plane longitudinal-mode vibrations.
Proceedings ArticleDOI
Temperature compensation of silicon MEMS Resonators by Heavy Doping
TL;DR: In this article, the temperature behavior of the resonance frequencies of Lamé and square extensional (SE) modes is measured, and significant temperature compensation effects are observed: as a result of heavy n-type doping the temperature coefficient of frequency (TCF) of the SE mode is reduced from -32 ppm/K to ca. -1 ppm/k, while a Lame ́ mode resonator exhibits an overcompensated TCF of +18 ppm /K.
Journal ArticleDOI
Determination of doping and temperature-dependent elastic constants of degenerately doped silicon from MEMS resonators
TL;DR: Calculation of the frequency drift of an arbitrary silicon resonator design with an accuracy of ±25 ppm between the calculated and real(ized) values over T = -40°C to +85°C at the doping levels covered in this work.
Proceedings ArticleDOI
Piezoelectrically transduced single-crystal-silicon plate resonators
Antti Jaakkola,P. Rosenberg,S. Asmala,A. Nurmela,Tuomas Pensala,Tommi Riekkinen,James Dekker,T. Mattila,Ari Alastalo,O. Holmgren,K. Kokkonen +10 more
TL;DR: In this article, the design, fabrication and characterization of piezoelectrically actuated single-crystal silicon plate resonators vibrating mainly in their bulk acoustic wave modes are described.