A
Antti Niskanen
Researcher at ASM International
Publications - 41
Citations - 2417
Antti Niskanen is an academic researcher from ASM International. The author has contributed to research in topics: Atomic layer deposition & Thin film. The author has an hindex of 20, co-authored 41 publications receiving 2386 citations. Previous affiliations of Antti Niskanen include University of Helsinki.
Papers
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Synthesis of Gold Nanoparticles Grafted with a Thermoresponsive Polymer by Surface-Induced Reversible-Addition-Fragmentation Chain-Transfer Polymerization
Janne Raula,Jun Shan,Markus Nuopponen,Antti Niskanen,Hua Jiang,Esko I. Kauppinen,Heikki Tenhu +6 more
TL;DR: In this paper, the synthesis method of Au nanoparticles protected by a well-defined polymer monolayer is described, and the number mean diameter of the Au core was 3.2 nm as observed by high-resolution transmission electron microscopy.
Patent
Methods for forming doped silicon oxide thin films
Noboru Takamure,Atsuki Fukazawa,Fukuda Hideaki,Antti Niskanen,Haukka Suvi,Nakano Ryu,Kunitoshi Namba +6 more
TL;DR: In this article, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursors and the precursor adsorb on the substrate surface.
Patent
Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES
TL;DR: In this article, a method and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments, the silicon pre-requisites comprise an iodine ligand.
Patent
Method of depositing rare earth oxide thin films
TL;DR: In this article, a cyclopentadienyl compounds of rare earth metals, especially those of yttrium, lanthanum, and gadolinium, are used for thin film deposition.
Patent
Selective formation of metallic films on metallic surfaces
TL;DR: In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer as mentioned in this paper, and the deposition temperature is selected such that a selectivity of above about 90% is achieved.