Anupam Karmakar

Bio: Anupam Karmakar is an academic researcher from University of Calcutta. The author has contributed to research in topics: Chemical bath deposition & Nanowire. The author has an hindex of 12, co-authored 56 publications receiving 424 citations.

Impact of a Spacer–Drain Overlap on the Characteristics of a Silicon Tunnel Field-Effect Transistor Based on Vertical Tunneling

Abstract: A tunnel field-effect transistor (FET) (TFET), in which the dominant carrier tunneling occurs in a direction that is in line with the gate electric field, shows great promise for sub-0.6-V operation. A detailed investigation, with the help of extensive device simulations, of the effects of a spacer-drain overlap on the device characteristics of such silicon TFET is reported in this paper. It is demonstrated that a supersteep subthreshold swing and a significantly reduced off-state current IOFF can be achieved by appropriate designing of the spacer-drain overlap. An investigation of the influence of the drain potential on the device characteristics reveals that the absence of a tunnel-resistance limited region results in long-channel metal-oxide-semiconductor FET-like output characteristics for such a structure. Short-channel effects, such as drain-induced barrier lowering, are also greatly suppressed in it. Results of the investigation on the scaling properties of such devices are also reported.

Impact of a Pocket Doping on the Device Performance of a Schottky Tunneling Field-Effect Transistor

Abstract: It is known that a pocket at the drain end of a Schottky barrier tunneling FET (SB-TFET) helps to improve the device performance in terms of greatly suppressed ambipolar current and reduced drain-induced barrier lowering (DIBL) A detailed investigation, with the help of a numerical device simulator, of the impact of using such a pocket either at the source end or at both the source and the drain ends of an SB-TFET is reported for the first time in this paper The performance of the above-mentioned two devices is compared with a device having a pocket at the drain end and a conventional MOSFET Optimization of the barrier height and the pocket parameters is made before performance comparison It is observed that a pocket at the drain end helps suppress the ambipolar current and reduce both the subthreshold swing and the DIBL On the other hand, a pocket at the source end helps to improve the ON-state current \(I_{\mathrm{{\scriptstyle ON}}}\) Using a pocket at both the source and the drain ends results in overall improvement of the device performance The effects of scaling on such device performance parameters are also reported

Handbook Of Modern Sensors Physics Designs And Applications

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Tunnel Field-Effect Transistor With an L-Shaped Gate

Abstract: In this letter, a new L-shaped gate tunnel field-effect transistor (LG-TFET) is proposed and investigated by Silvaco Atlas simulation. The tunneling junction in the LG-TFET is perpendicular to the channel direction that facilitates the implementation of a relatively large tunneling junction area. The channel is U-shaped that makes the channel mainly distribute in the vertical direction, reducing the device area. The n+ pocket design is also introduced between the source and the intrinsic regions to improve the device characteristic. In addition, the gate and n+ pocket region overlap both in the vertical and the lateral directions resulting in an enhanced electric field, and the ON-state current of the LG-TFET is increased up to $\sim 50$ % compared with the previous L-shaped channel TFET. The minimum subthreshold swing of the LG-TFET is 38.5 mV/decade at 0.2 V gate-to-source voltage. By using the L-shaped gate, U-shaped channel, and the insertion of n+ pocket, the overall performance of the LG-TFET is optimized.

European Food Safety Authority (EFSA)

Abstract: The European Food Safety Authority (EFSA) is the European Union agency responsible for the risk assessment of issues related to food and feed safety. In close collaboration with national authorities, and taking into account the views of its stakeholders, EFSA provides independent scientific advice to the European Commission, the European Parliament, and other institutions, as well as clear communication on existing and emerging risks.