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Anvar A. Zakhidov

Researcher at University of Texas at Dallas

Publications -  431
Citations -  29853

Anvar A. Zakhidov is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: Perovskite (structure) & Carbon nanotube. The author has an hindex of 63, co-authored 417 publications receiving 27644 citations. Previous affiliations of Anvar A. Zakhidov include University of Texas System & Business International Corporation.

Papers
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Journal ArticleDOI

Resonant Silicon Nanoparticles for Enhanced Light Harvesting in Halide Perovskite Solar Cells

Aleksandra Furasova, +4 more
TL;DR: In this article, low-loss and chemically inert resonant silicon nanoparticles (NPs) are added between electron transport layer and perovskite layer that allows to increase the efficiency enhancement via improved light harvesting, photocurrent, open-circuit voltage and fill-factor.
Journal ArticleDOI

Comparison of Pr-doped Ca 122 and Ca 112 Pnictides by low-field microwave absorption spectroscopy

Austin Howard, +6 more
- 16 May 2014 - 
TL;DR: In this article, a strong hysteretic Low Magnetic Field Microwave Absorption (LFMA) was found for Praseodymium doped CaFe2As2 (122) and CaFeAs2(112) structures.
Journal ArticleDOI

Mixed Halide Perovskite Light Emitting Solar Cell

Dmitry Gets, +7 more
TL;DR: In this article, the authors demonstrate that the halide perovskite planar solar cells with the architecture of ITO/PEDOT:PSS/Perovskites/PCBM/LiF/Al show a switchable dual operation of descent photovoltaic and quite bright electroluminescence in visible range.
Posted Content

An improved model for describing the net carrier recombination rate in semiconductor devices

M. L. Inche Ibrahim, +1 more
- 23 Aug 2021 - 
TL;DR: In this article, the authors derived and proposed a new model for describing the net carrier recombination rate in semiconductor devices, which is an improvement to the currently used model by considering the fact that electric current can flow in the semiconducting materials of semiconductor device.
Proceedings ArticleDOI

Photoluminescence behavior of nanoimprinted halide perovskite at low temperatures

Z. F. Sadrieva, +7 more
TL;DR: In this paper, the authors reported theoretical and experimental results for a high-Q cavity based on nano-imprinted perovskite film and revealed that bound state in the continuum transformed into a resonant state due to leakage into substrate leads to significant enhancement of the photoluminescence signal.