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Appala Naidu Gandi

Researcher at Indian Institute of Technology, Jodhpur

Publications -  36
Citations -  2469

Appala Naidu Gandi is an academic researcher from Indian Institute of Technology, Jodhpur. The author has contributed to research in topics: Chemistry & Phonon. The author has an hindex of 10, co-authored 23 publications receiving 1780 citations. Previous affiliations of Appala Naidu Gandi include Indian Institute of Science & King Abdullah University of Science and Technology.

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Journal ArticleDOI

Plasma-Assisted Synthesis of NiCoP for Efficient Overall Water Splitting.

TL;DR: A novel PH3 plasma-assisted approach to convert NiCo hydroxides into ternary NiCoP that shows superior catalytic activity toward the hydrogen evolution reaction (HER) with a low overpotential and is among the most efficient earth-abundant catalysts for water splitting.
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Amorphous NiFe-OH/NiFeP Electrocatalyst Fabricated at Low Temperature for Water Oxidation Applications

TL;DR: Li et al. as discussed by the authors reported the rapid conversion of NiFe double hydroxide into metallic NiFeP using PH3 plasma treatment and further construction of amorphous NiFe hydroxides/NiFeP/Ni foam as efficient and stable oxygen-evolving anodes.
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Low temperature synthesis of ternary metal phosphides using plasma for asymmetric supercapacitors

TL;DR: In this article, the NiCoP nanosheet electrodes achieve high electrochemical activity and good stability in 1M KOH electrolyte, and the Ni2P nanoplates/graphene films asymmetric supercapacitor devices can deliver a high energy density of 32.9 Wh/kg/1 at a power density of 1301 W/kg−1, along with outstanding cycling performance.
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Is NiCo2S4 Really a Semiconductor

TL;DR: In this article, it was shown that NiCo2S4 is in fact a metal and the Raman spectrum of this material was calculated for the first time, thus clarifying inconsistent Raman spectra reports.
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Thermal conductivity of bulk and monolayer MoS2

TL;DR: In this paper, the lattice contribution to the thermal conductivity of MoS2 strongly dominates the carrier contribution in a broad temperature range from 300 to 800 K, and the length scale for transition between diffusive and ballistic transport is determined.