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Ariel Ismach
Researcher at Tel Aviv University
Publications - 60
Citations - 7699
Ariel Ismach is an academic researcher from Tel Aviv University. The author has contributed to research in topics: Graphene & Chemical vapor deposition. The author has an hindex of 26, co-authored 51 publications receiving 6729 citations. Previous affiliations of Ariel Ismach include Lawrence Berkeley National Laboratory & University of Texas at Austin.
Papers
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Journal ArticleDOI
Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
Sheneve Z. Butler,Shawna M. Hollen,Linyou Cao,Yi Cui,Yi Cui,Jay Gupta,Humberto R. Gutierrez,Tony F. Heinz,Seung Sae Hong,Seung Sae Hong,Jiaxing Huang,Ariel Ismach,Ezekiel Johnston-Halperin,Masaru Kuno,Vladimir V. Plashnitsa,Richard D. Robinson,Rodney S. Ruoff,Sayeef Salahuddin,Jie Shan,Li Shi,Michael G. Spencer,Mauricio Terrones,Wolfgang Windl,Joshua E. Goldberger +23 more
TL;DR: The properties and advantages of single-, few-, and many-layer 2D materials in field-effect transistors, spin- and valley-tronics, thermoelectrics, and topological insulators, among many other applications are highlighted.
PatentDOI
Direct chemical vapor deposition of graphene on dielectric surfaces
Yuegang Zhang,Ariel Ismach +1 more
TL;DR: In this paper, a substrate is provided that has a metallic layer on a substrate surface of a substrate, and a film made of a two dimensional (2D) material, such as graphene, is deposited on a metallic surface of the metallic layer.
Journal ArticleDOI
Fermi velocity engineering in graphene by substrate modification
Choongyu Hwang,David Siegel,David Siegel,Sung-Kwan Mo,William Regan,William Regan,Ariel Ismach,Yuegang Zhang,Alex Zettl,Alex Zettl,Alessandra Lanzara,Alessandra Lanzara +11 more
TL;DR: In this article, the Fermi velocity of graphene has been shown to be inversely proportional to its dielectric constant, reaching 2.5×106m/s, the highest value for graphene on any substrate studied so far.
Journal ArticleDOI
Formation of bandgap and subbands in graphene nanomeshes with sub-10 nm ribbon width fabricated via nanoimprint lithography.
Xiaogan Liang,Yeon Sik Jung,Shiwei Wu,Ariel Ismach,Deirdre L. Olynick,Stefano Cabrini,Jeffrey Bokor,Jeffrey Bokor +7 more
TL;DR: Graphene field-effect transistors made from GNMs exhibit very different electronic characteristics in comparison with unpatterned GFETs even at room temperature, which could be employed to construct future electronic devices based on graphene superlattices.
Journal ArticleDOI
Toward the Controlled Synthesis of Hexagonal Boron Nitride Films
Ariel Ismach,Harry Chou,Domingo Ferrer,Yaping Wu,Stephen McDonnell,Herman C. Floresca,Alan Covacevich,Cody W. Pope,Richard D. Piner,Moon J. Kim,Robert M. Wallace,Luigi Colombo,Rodney S. Ruoff +12 more
TL;DR: The use of LPCVD allows synthesis of h-BN with a controlled number of layers defined by the growth conditions, temperature, time, and gas partial pressure, and insights into the growth mechanism are described, thus forming the basis of future growth ofh-BN by atomic layer epitaxy.