Arkadiy Morgenshtein

Bio: Arkadiy Morgenshtein is an academic researcher from Technion – Israel Institute of Technology. The author has contributed to research in topics: Logic gate & Pass transistor logic. The author has an hindex of 16, co-authored 35 publications receiving 1174 citations. Previous affiliations of Arkadiy Morgenshtein include Intel & Ben-Gurion University of the Negev.

Gate-diffusion input (GDI): a power-efficient method for digital combinatorial circuits

Abstract: Gate diffusion input (GDI) - a new technique of low-power digital combinatorial circuit design - is described. This technique allows reducing power consumption, propagation delay, and area of digital circuits while maintaining low complexity of logic design. Performance comparison with traditional CMOS and various pass-transistor logic design techniques is presented. The different methods are compared with respect to the layout area, number of devices, delay, and power dissipation. Issues like technology compatibility, top-down design, and precomputing synthesis are discussed, showing advantages and drawbacks of GDI compared to other methods. Several logic circuits have been implemented in various design styles. Their properties are discussed, simulation results are reported, and measurements of a test chip are presented.

Logic circuit and method of logic circuit design

Abstract: A complementary logic circuit contains a first logic input, a second logic input, a first dedicated logic terminal, a second dedicated logic terminal, a first logic block, and a second logic block. The first logic block consists of a network of p-type transistors for implementing a predetermined logic function. The p-type transistor network has an outer diffusion connection, a first network gate connection, and an inner diffusion connection. The outer diffusion connection of the p-type transistor network is connected to the first dedicated logic terminal, and the first network gate connection of the p-type transistor network is connected to the first logic input. The second logic block consists of a network of n-type transistors which implements a logic function complementary to the logic function implemented by the first logic block. The n-type transistor network has an outer diffusion connection, a first network gate connection, and an inner diffusion connection. The outer diffusion connection of the n-type transistor network is connected to the second dedicated logic terminal, and the first network gate connection of the n-type transistor network is connected to the second logic input. The inner diffusion connections of the p-type network and of the n-type network are connected together to form a common diffusion logic terminal.

Gate Diffusion Input (GDI) logic in standard CMOS nanoscale process

Abstract: In this paper CMOS compatible Gate Diffusion Input (GDI) design technique is proposed. The GDI method enables the implementation of a wide range of complex logic functions using only two transistors. This method is suitable for the design of low-power logic gates, with a much smaller area than Static CMOS and existing PTL techniques. As opposite to our originally proposed GDI logic, the modified GDI logic is fully compatible for implementation in a standard CMOS process. Simulations of basic GDI gates under process and temperature corners in 40nm CMOS process are shown and compared to similar CMOS gates. We show that while having the same delay, GDI gates achieve leakage and active power reduction of up to 70% and 50%, respectively.

Gate-diffusion input (GDI)-a novel power efficient method for digital circuits: a design methodology

Abstract: GDI (gate diffusion input)-a new technique of low power digital combinatorial circuit design-is described. This technique allows reducing power consumption, delay and area of digital circuits, while maintaining low complexity of logic design. A detailed design methodology is described. Performance comparison with traditional CMOS and PTL design techniques is presented. The different methods are compared with respect to the layout area, number of devices, delay and power dissipation. Several logic circuits have been implemented in various design styles. Their properties are discussed, simulation results are reported.

Methods and apparatus for measuring analytes using large scale fet arrays

Abstract: An apparatus may include a semiconductor chip and a fluidics assembly. The semiconductor chip has an array of wells and an array of sensors and each sensor of the array of sensors is in fluid communication with a well of the array of wells. The fluidics assembly is located on top of the semiconductor chip and is configured to deliver fluids to the semiconductor chip. The fluidics assembly includes a flow expansion chamber configured to introduce the fluids, an outlet portion configured to pipe out the fluids, and a flow chamber portion. The flow chamber portion is configured to allow the fluids to flow from the flow expansion chamber to the outlet portion and to allow the fluids to interact along the way with material in the array of wells. The flow expansion chamber has a curved wall at the top or bottom so that the height of the flow expansion chamber at the center is less than at the walls that restrict the fluids to the left and right.

Methods and apparatus for measuring analytes

Abstract: Methods and apparatus relating to FET arrays including large FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.

Methods and apparatus for detecting molecular interactions using FET arrays

Abstract: Methods and apparatuses relating to large scale FET arrays for analyte detection and measurement are provided. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes.