Arne Alping

Bio: Arne Alping is an academic researcher from Ericsson. The author has contributed to research in topics: Laser & Semiconductor laser theory. The author has an hindex of 17, co-authored 58 publications receiving 1181 citations. Previous affiliations of Arne Alping include Electronics Research Center & Chalmers University of Technology.

Highly integrated 60 GHz transmitter and receiver MMICs in a GaAs pHEMT technology

Abstract: Highly integrated transmitter and receiver MMICs have been designed in a commercial 0.15 /spl mu/m, 88 GHz f/sub T//183 GHz f/sub MAX/ GaAs pHEMT MMIC process and characterized on both chip and system level. These chips show the highest level of integration yet presented in the 60 GHz band and are true multipurpose front-end designs. The system operates with an LO signal in the range 7-8 GHz. This LO signal is multiplied in an integrated multiply-by-eight (X8) LO chain, resulting in an IF center frequency of 2.5 GHz. Although the chips are inherently multipurpose designs, they are especially suitable for high-speed wireless data transmission due to their very broadband IF characteristics. The single-chip transmitter MMIC consists of a balanced resistive mixer with an integrated ultra-wideband IF balun, a three-stage power amplifier, and the X8 LO chain. The X8 is a multifunction design by itself consisting of a quadrupler, a feedback amplifier, a doubler, and a buffer amplifier. The transmitter chip delivers 3.7/spl plusmn/1.5 dBm over the RF frequency range of 54-61 GHz with a peak output power of 5.2 dBm at 57 GHz. The single-chip receiver MMIC contains a three-stage low-noise amplifier, an image reject mixer with an integrated ultra-wideband IF hybrid and the same X8 as used in the transmitter chip. The receiver chip has 7.1/spl plusmn/1.5 dB gain between 55 and 63 GHz, more than 20 dB of image rejection ratio between 59.5 and 64.5 GHz, 10.5 dB of noise figure, and -11 dBm of input-referred third-order intercept point (IIP3).

Analysis of depletion edge translation lightwave modulators

Abstract: Presents a complete analysis of waveguide phase modulators based on the depletion-edge-translation concept. The phenomena taking place inside the depletion region which contribute to changing the refractive index there are studied. It is shown that the behavior of these modulators can be understood in terms of two electric field-related and two carrier-related effects: linear electrooptic, electrorefractive, plasma, and band filling. The sum of the refractive index variations produced by each one of these effects, taking into account the waveguide geometry, accounts quantitatively for the experimental phase shifts measured in the devices. No fitting parameters are used and a very good agreement between theory and experiment is obtained. Based on this theory, an analysis of the device is made in terms of the optimum values for the doping in the waveguide, and also in terms of the wavelength dependence of the device phase modulation properties. >

High gain active microstrip antenna for 60-GHz WLAN/WPAN applications

Abstract: A 60-GHz active microstrip antenna design comprising a three-stage pseudomorphic high electron mobility transistor amplifier integrated with a high gain antenna on an alumina substrate is presented. The amplifier has 18-dB gain and is ribbon bonded to the substrate on which the antenna is defined. The antenna is a microstrip array antenna with a simple etched pattern for producibility at high frequencies. Two antenna layouts are designed, for different coverage areas: a single array having 13.4-dBi directivity and a double array with 14.6-dBi directivity. Antenna losses are approximately 1-2 dB, giving antenna gains of about 12 and 13 dBi, respectively. Mechanical simplicity is achieved with this design, and unnecessary transitions are avoided. Measurements are performed on amplifier and antenna separately, as well as on the integrated design. Amplifier chips with and without benzocyclobutene passivation are fabricated and measured for comparison.

High gain active microstrip antenna for 60-GHz WLAN/WPAN applications

Abstract: A 60-GHz active microstrip antenna design comprising a three-stage pseudomorphic high electron mobility transistor amplifier integrated with a high gain antenna on an alumina substrate is presented. The amplifier has 18-dB gain and is ribbon bonded to the substrate on which the antenna is defined. The antenna is a microstrip array antenna with a simple etched pattern for producibility at high frequencies. Two antenna layouts are designed, for different coverage areas: a single array having 13.4-dBi directivity and a double array with 14.6-dBi directivity. Antenna losses are approximately 1-2 dB, giving antenna gains of about 12 and 13 dBi, respectively. Mechanical simplicity is achieved with this design, and unnecessary transitions are avoided. Measurements are performed on amplifier and antenna separately, as well as on the integrated design. Amplifier chips with and without benzocyclobutene passivation are fabricated and measured for comparison

60 GHz Single-Chip Front-End MMICs and Systems for Multi-Gb/s Wireless Communication

Abstract: Single-chip 60 GHz transmitter (TX) and receiver (RX) MMICs have been designed and characterized in a 0.15mum (fT~ 120 GHz/f MAX> 200 GHz) GaAs mHEMT MMIC process. This paper describes the second generation of single-chip TX and RX MMICs together with work on packaging (e.g., flip-chip) and system measurements. Compared to the first generation of the designs in a commercial pHEMT technology, the MMICs presented in this paper show the same high level of integration but occupy smaller chip area and have higher gain and output power at only half the DC power consumption. The system operates with a LO signal in the range of 7-8 GHz. This LO signal is multiplied in an integrated multiply-by-eight (X8) LO multiplier chain, resulting in an IF center frequency of 2.5 GHz. Packaging and interconnects are discussed and as an alternative to wire bonding, flip-chip assembly tests are presented and discussed. System measurements are also described where bit error rate (BER) and eye diagrams are measured when the presented TX and RX MMICs transmits and receives a modulated signal. A data rate of 1.5 Gb/s with simple ASK modulation was achieved, restricted by the measurement setup rather than the TX and RX MMICs. These tests indicate that the presented MMICs are especially well suited for transmission and reception of wireless signals at data rates of several Gb/s

Electrooptical effects in silicon

Abstract: A numerical Kramers-Kronig analysis is used to predict the refractive-index perturbations produced in crystalline silicon by applied electric fields or by charge carriers. Results are obtained over the 1.0-2.0 \mu m optical wavelength range. The analysis makes use of experimental electroabsorption spectra and impurity-doping spectra taken from the literature. For electrorefraction at the indirect gap, we find \Delta n = 1.3 \times 10^{5} at \lambda = 1.07 \mu m when E = 10^{5} V/cm, while the Kerr effect gives \Delta n = 10^{-6} at that field strength. The charge-carrier effects are larger, and a depletion or injection of 1018carriers/cm3produces an index change of \pm1.5 \times 10^{-3} at \lambda = 1.3 \mu m.

Microwave photonics combines two worlds

Abstract: Microwave photonics, which brings together the worlds of radiofrequency engineering and optoelectronics, has attracted great interest from both the research community and the commercial sector over the past 30 years and is set to have a bright future. The technology makes it possible to have functions in microwave systems that are complex or even not directly possible in the radiofrequency domain and also creates new opportunities for telecommunication networks. Here we introduce the technology to the photonics community and summarize recent research and important applications.

Carrier-induced change in refractive index of InP, GaAs and InGaAsP

Abstract: The change in refractive index Delta n produced by injection of free carriers in InP, GaAs, and InGaAsP is theoretically estimated. Bandfilling (Burstein-Moss effect), bandgap shrinkage, and free-carrier absorption (plasma effect) are included. Carrier concentrations of 10/sup 16//cm/sup 3/ to 10/sup 19//cm/sup 3/ and photon energies of 0.8 to 2.0 eV are considered. Predictions for Delta n are in reasonably good agreement with the limited experimental data available. Refractive index changes as large as 10/sup -2/ are predicted for carrier concentrations of 10/sup 8//cm/sup 3/ suggested that low-loss optical phase modulators and switches using carrier injection are feasible in these materials. >

State of the Art in 60-GHz Integrated Circuits and Systems for Wireless Communications

Abstract: This tutorial presents an overview of the technological advances in millimeter-wave (mm-wave) circuit components, antennas, and propagation that will soon allow 60-GHz transceivers to provide multigigabit per second (multi-Gb/s) wireless communication data transfers in the consumer marketplace. Our goal is to help engineers understand the convergence of communications, circuits, and antennas, as the emerging world of subterahertz and terahertz wireless communications will require understanding at the intersections of these areas. This paper covers trends and recent accomplishments in a wide range of circuits and systems topics that must be understood to create massively broadband wireless communication systems of the future. In this paper, we present some evolving applications of massively broadband wireless communications, and use tables and graphs to show research progress from the literature on various radio system components, including on-chip and in-package antennas, radio-frequency (RF) power amplifiers (PAs), low-noise amplifiers (LNAs), voltage-controlled oscillators (VCOs), mixers, and analog-to-digital converters (ADCs). We focus primarily on silicon-based technologies, as these provide the best means of implementing very low-cost, highly integrated 60-GHz mm-wave circuits. In addition, the paper illuminates characterization techniques that are required to competently design and fabricate mm-wave devices in silicon, and illustrates effects of the 60-GHz RF propagation channel for both in-building and outdoor use. The paper concludes with an overview of the standardization and commercialization efforts for 60-GHz multi-Gb/s devices, and presents a novel way to compare the data rate versus power efficiency for future broadband devices.

Integrated optics

Abstract: In order to enable optical systems to operate with a high degree of compactness and reliability it is necessary to combine large number of optical functions in small monolithic structures. A development, somewhat reminiscent of that that took place in Integrated Electronics, is now beginning to take place in optics. The initial challenge in this emerging field, known appropriately as "Integrated Optics", is to demonstrate the possibility of performing basic optical functions such as light generation, coupling, modulation, and guiding in Integrated Optical configurations. The talk will review the main theoretical and experimental developments to date in Integrated Optics. Specific topics to be discussed include: Material considerations, guiding mechanisms, modulation, coupling and mode losses. The fabrication and applications of periodic thin film structures will be discussed.