The term photonic crystals appears because of the analogy between electron waves in crystals and the light waves in artificial periodic dielectric structures. During the recent years the investigation of one-, two-and three-dimensional periodic structures has attracted a widespread attention of the world optics community because of great potentiality of such structures in advanced applied optical fields. The interest in periodic structures has been stimulated by the fast development of semiconductor technology that now allows the fabrication of artificial structures, whose period is comparable with the wavelength of light in the visible and infrared ranges.

http://ieeexplore.ieee.org/iel5/6354/16969/00781867.pdf

Photonic crystals

Journal of Applied physics,Vol.33 : 1962年に発表されたレオロジー関連の論文

EPJ E publishes papers describing advances in the understanding of physical aspects of Soft Matter and Biological Systems. The journal includes reports of experimental, computational and theoretical studies and appeals to the broad interdisciplinary communities including physics, chemistry, biology, mathematics and materials science. Unique features of EPJ E: Tips and tricks short papers focused on a novel methodological approach that enables new science Colloquia papers reviewing new directions in Research Prestigious international board of editors Highly competent and fast editorial handling Global contributions and global readership Commonly used title abbreviations: Eur. Phys. J. E, Eur.Phys.J.E, EPJE, EPJ E

The European Physical Journal D

The theoretical fundamentals of fiber-based optical parametric amplifiers(OPA) are reviewed,and their applications are discussed in this paper.In the end the future research aspects are expected.

Fiber-based Optical Parametric Amplifiers and Their Applications

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Journal of Nanoscience and Nanotechnology

Asymmetric gate effect on I D -V SD characteristic of p-type Si 1-x Ge x double-gate MOSFET is analytically investigated following Ortiz-Conde model Position of maximum potential wrt centre point is computed, and corresponding centre potential is measured; which is included for drain current calculation Different barrier height at the top and bottom gates are considered which effectively provides the shift of surface potential, and result is compared with that obtained for conventional symmetric device; as obtained from Ortiz-Conde model Channel length, external biases and dielectric properties are also varied to observe the shift of saturation current, where Fowler-Nordheim tunneling probability is invoked owing to thinner dielectric layer Results are key for amplifier design using DGMOSFET for optimum gain

Computing Gate Asymmetric Effect on Drain Current of DG-MOSFET following Ortiz-Conde Model

Drain-to-source current of independently-driven double gate (ID-DG) MOSFET is analytically computed following Ortiz-Conde model in sub 100 nm channel length in presence of different high-K dielectrics. Fowler-Nordheim tunneling concept is invoked due to reduced dielectric thickness; and front gate control is tailored to analyze the effect on current and pinch-off voltage. Excellent agreement is observed with published literatures for high front-gate voltage when device is lightly doped; which speaks in favor of the work within dimensional constraints. Percentage change of current considering body effect is estimated for different gate bias. Result speaks in favor of low power analog applications.

Effect of High-K Dielectric on Drain Current of ID-DG MOSFET Using Ortiz-Conde Model

Differential conductance and transconductance of double-gate MOSFET are analytically computed in presence of high-K dielectric following Ortiz-Conde model. Poisson’s equation and carrier continuity equation are simultaneously solved incorporating the effect of back-gate, and independent-gate model is considered for electrical characterization. Percentage change of conductance and transconductance are calculated, and results are compared with published literature. Effect of high-K dielectric is analyzed with that obtained for conventional SiO2 materials where comparison is taking place with identical bias and structural parameters. Saturation of transconductance is obtained for high-K dielectrics for higher VGS and lower VDS, indicating the subthreshold condition. Pinch-off condition is also evaluated from the plot of differential conductance. Results are extremely useful for utilizing the device for analog and digital circuits with nano-device.

Effect of high-K dielectric on differential conductance and transconductance of ID-DG MOSFET following Ortiz-Conde model

Static and transfer characteristics of single electron transistor are analytically calculated as a function of operating temperature under suitable biasing conditions. Computation is carried out assuming quantum mechanical coupling between source and drain; along with stochastic nature of tunneling process. Fermi Golden Rule is used to calculate free energy changes at both source and drain ends, and corresponding tunneling probabilities, which are governing factor for determining drain current. Result shows that significant variation is observed at lower temperature operation in terms of drain current and differential conductance. It is found out that at low horizontal bias, transfer characteristics is greatly influenced at lower temperature, whereas moderate gate voltage is required to observe meaningful fluctuations in static characteristics. Magnitudes of differential conductance and transconductance increase at higher temperature. Results have critical importance for operation of the device at different temperature conditions.

Arpan Deyasi

Papers

Computing Gate Asymmetric Effect on Drain Current of DG-MOSFET following Ortiz-Conde Model

Effect of High-K Dielectric on Drain Current of ID-DG MOSFET Using Ortiz-Conde Model

Effect of high-K dielectric on differential conductance and transconductance of ID-DG MOSFET following Ortiz-Conde model

Effect of temperature on electrical characteristics of single electron transistor

Foundation, Progress and Future of Photonics, Plasmonics and Information Optics