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Arvind Kumar

Researcher at International Crops Research Institute for the Semi-Arid Tropics

Publications -  1106
Citations -  38867

Arvind Kumar is an academic researcher from International Crops Research Institute for the Semi-Arid Tropics. The author has contributed to research in topics: Medicine & Population. The author has an hindex of 85, co-authored 876 publications receiving 33484 citations. Previous affiliations of Arvind Kumar include ITM University & University of Freiburg.

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Molecular Adaptations Underlying Susceptibility and Resistance to Social Defeat in Brain Reward Regions

TL;DR: It is shown that molecular recapitulations of three prototypical adaptations associated with the unsusceptible phenotype are each sufficient to promote resistant behavior and validate a multidisciplinary approach to examine the neurobiological mechanisms of variations in stress resistance.
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Sustained hippocampal chromatin regulation in a mouse model of depression and antidepressant action

TL;DR: An important role for histone remodeling in the pathophysiology and treatment of depression is underscored and the therapeutic potential for hist one methylation and deacetylation inhibitors in depression is highlighted.
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Epigenetic regulation in psychiatric disorders

TL;DR: This review summarizes recent evidence for the existence of sustained epigenetic mechanisms of gene regulation in neurons that have been implicated in the regulation of complex behaviour, including abnormalities in several psychiatric disorders such as depression, drug addiction and schizophrenia.
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Chromatin remodeling is a key mechanism underlying cocaine-induced plasticity in striatum

TL;DR: It is shown that cocaine induces specific histone modifications at different gene promoters in striatum, a major neural substrate for cocaine's behavioral effects, and chromatin remodeling is an important regulatory mechanism underlying cocaine-induced neural and behavioral plasticity.
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Three-dimensional integrated circuits

TL;DR: The process steps and design aspects that were developed at IBM to enable the formation of stacked device layers are reviewed, including the descriptions of a glass substrate process to enable through-wafer alignment and a single-damascene patterning and metallization method for the creation of high-aspect-ratio capability.