Arvind Singh

Bio: Arvind Singh is an academic researcher from Indian Institute of Technology Delhi. The author has contributed to research in topics: Topological insulator & Graphene. The author has an hindex of 6, co-authored 49 publications receiving 164 citations. Previous affiliations of Arvind Singh include Indian Institutes of Technology.

Design and realization of an all-fiber broadband tunable gain equalization filter for DWDM signals.

Abstract: Design and fabrication of a tunable gain equalization filter for dense wavelength division multiplexed (DWDM) signals through erbium doped fiber amplifiers (EDFA) is reported. It is based on a side-polished fiber (SPF) half-coupler block loaded with a displaceable tapered multimode overlay waveguide (MMOW). A simple and accurate normal mode analysis is employed to design this filtering device for its subsequent realization. Equalization of a typical EDFA gain spectrum in the C-band within ±0.35 dB or even less in the presence of various ITU standard C-band DWDM signal channels is demonstrated under varied operating conditions like add/drop of signals. Tunability of the filter notch is achieved through displacement of the SPF relative to the MMOW.

Graphene-MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics

Abstract: Two-dimensional (2D) materials have generated great interest in the past few years as a new toolbox for electronics. This family of materials includes, among others, metallic graphene, semiconducting transition metal dichalcogenides (such as MoS2), and insulating boron nitride. These materials and their heterostructures offer excellent mechanical flexibility, optical transparency, and favorable transport properties for realizing electronic, sensing, and optical systems on arbitrary surfaces. In this paper, we demonstrate a novel technology for constructing large-scale electronic systems based on graphene/molybdenum disulfide (MoS2) heterostructures grown by chemical vapor deposition. We have fabricated high-performance devices and circuits based on this heterostructure, where MoS2 is used as the transistor channel and graphene as contact electrodes and circuit interconnects. We provide a systematic comparison of the graphene/MoS2 heterojunction contact to more traditional MoS2-metal junctions, as well as a theoretical investigation, using density functional theory, of the origin of the Schottky barrier height. The tunability of the graphene work function with electrostatic doping significantly improves the ohmic contact to MoS2. These high-performance large-scale devices and circuits based on this 2D heterostructure pave the way for practical flexible transparent electronics.

Enhancement of ferromagnetism upon thermal annealing in pure ZnO

Abstract: We report here enhancement of ferromagnetism in pure ZnO upon thermal annealing with the ferromagnetic transition temperature Tc above room temperature. We observe a finite coercive field upto 300K and a finite thermoremanent magnetization upto 340K for the annealed sample. We propose that magnetic moments can form at anionic vacancy clusters. Ferromagnetism can occur due to either superexchange between vacancy clusters via isolated F+ centers, or through a limited electron delocalization between vacancy clusters. Isolated vacancy clusters or isolated F+ centers give rise to a strong paramagnetic like behaviour below 10K.

Manifestation of topological protection in transport properties of epitaxial Bi$_2$Se$_3$ thin films

Abstract: The massless Dirac fermions residing on the surface of three-dimensional topological insulators are protected from backscattering and cannot be localized by disorder, but such protection can be lifted in ultrathin films when the three-dimensionality is lost. By measuring the Shubnikov-de Haas oscillations in a series of high-quality Bi2Se3 thin films, we revealed a systematic evolution of the surface conductance as a function of thickness and found a striking manifestation of the topological protection: The metallic surface transport abruptly diminishes below the critical thickness of ~6 nm, at which an energy gap opens in the surface state and the Dirac fermions become massive. At the same time, the weak antilocalization behavior is found to weaken in the gapped phase due to the loss of π Berry phase.

Electrically tunable surface-to-bulk coherent coupling in topological insulator thin films

Abstract: We study coherent electronic transport in charge-density-tunable microdevices patterned from thin films of the topological insulator (TI) Bi${}_{2}$Se${}_{3}$. The devices exhibit pronounced electric field effect, including ambipolar modulation of the resistance with an on-and-off ratio of 500%. We show that the weak antilocalization correction to conductance is sensitive to the number of coherently coupled channels, which in a TI includes the top and bottom surfaces and the bulk carriers. These are separated into coherently independent channels by the application of gate voltage and at elevated temperatures. Our results are consistent with a model where channel separation is determined by a competition between the phase coherence time and the surface-to-bulk scattering time.