Atsushi Tsukazaki

Bio: Atsushi Tsukazaki is an academic researcher from Tohoku University. The author has contributed to research in topics: Topological insulator & Thin film. The author has an hindex of 54, co-authored 260 publications receiving 12598 citations. Previous affiliations of Atsushi Tsukazaki include Rohm & National Presto Industries.

Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

Abstract: Since the successful demonstration of a blue light-emitting diode (LED)1, potential materials for making short-wavelength LEDs and diode lasers have been attracting increasing interest as the demands for display, illumination and information storage grow2,3,4. Zinc oxide has substantial advantages including large exciton binding energy, as demonstrated by efficient excitonic lasing on optical excitation5,6. Several groups have postulated the use of p-type ZnO doped with nitrogen, arsenic or phosphorus7,8,9,10, and even p–n junctions11,12,13. However, the choice of dopant and growth technique remains controversial and the reliability of p-type ZnO is still under debate14. If ZnO is ever to produce long-lasting and robust devices, the quality of epitaxial layers has to be improved as has been the protocol in other compound semiconductors15. Here we report high-quality undoped films with electron mobility exceeding that in the bulk. We have used a new technique to fabricate p-type ZnO reproducibly. Violet electroluminescence from homostructural p–i–n junctions is demonstrated at room-temperature.

Magnetic topological insulators

Abstract: The importance of global band topology is unequivocally recognized in condensed matter physics, and new states of matter, such as topological insulators, have been discovered. Owing to their bulk band topology, 3D topological insulators possess a massless Dirac dispersion with spin–momentum locking at the surface. Although 3D topological insulators were originally proposed in time-reversal invariant systems, the onset of a spontaneous magnetization or, equivalently, a broken time-reversal symmetry leads to the formation of an exchange gap in the Dirac band dispersion. In such magnetic topological insulators, tuning of the Fermi level in the exchange gap results in the emergence of a quantum Hall effect at zero magnetic field, that is, of a quantum anomalous Hall effect. Here, we review the basic concepts of magnetic topological insulators and their experimental realization, together with the discovery and verification of their emergent properties. In particular, we discuss how the development of tailored materials through heterostructure engineering has made it possible to access the quantum anomalous Hall effect, the topological magnetoelectric effect, the physics related to the chiral edge states that appear in these materials and various spintronic phenomena. Further theoretical and experimental research on magnetic topological insulators will provide fertile ground for the development of new concepts for next-generation electronic devices for applications such as spintronics with low energy consumption, dissipationless topological electronics and topological quantum computation. Magnetic topological insulators enable the investigation of the interplay between magnetism and topological electronic states. This Review summarizes the basic notions of magnetic topological insulators and the progress in the experimental realization of exotic topological phenomena.

Trajectory of the anomalous Hall effect towards the quantized state in a ferromagnetic topological insulator

Abstract: Quantized resistivity values for 2D electron systems don’t necessarily result from an external magnetic field as in the ‘normal’ quantum Hall effect; they can arise due to a material's intrinsic ferromagnetism too—the quantum anomalous Hall effect. Experiments with a ferromagnetic topological insulator now establish how the anomalous states can be mapped onto the normal states.

High‐Density Carrier Accumulation in ZnO Field‐Effect Transistors Gated by Electric Double Layers of Ionic Liquids

Abstract: Very recently, electric-field-induced superconductivity in an insulator was realized by tuning charge carrier to a high density level (1 × 1014 cm−2). To increase the maximum attainable carrier density for electrostatic tuning of electronic states in semiconductor field-effect transistors is a hot issue but a big challenge. Here, ultrahigh density carrier accumulation is reported, in particular at low temperature, in a ZnO field-effect transistor gated by electric double layers of ionic liquid (IL). This transistor, called an electric double layer transistor (EDLT), is found to exhibit very high transconductance and an ultrahigh carrier density in a fast, reversible, and reproducible manner. The room temperature capacitance of EDLTs is found to be as large as 34 µF cm−2, deduced from Hall-effect measurements, and is mainly responsible for the carrier density modulation in a very wide range. Importantly, the IL dielectric, with a supercooling property, is found to have charge-accumulation capability even at low temperatures, reaching an ultrahigh carrier density of 8×1014 cm−2 at 220 K and maintaining a density of 5.5×1014 cm−2 at 1.8 K. This high carrier density of EDLTs is of great importance not only in practical device applications but also in fundamental research; for example, in the search for novel electronic phenomena, such as superconductivity, in oxide systems.

Quantum Hall Effect in Polar Oxide Heterostructures

Abstract: We observed Shubnikov-de Haas oscillation and the quantum Hall effect in a high-mobility two-dimensional electron gas in polar ZnO/Mg(x)Zn(1-x)O heterostructures grown by laser molecular beam epitaxy. The electron density could be controlled in a range of 0.7 x 10(12) to 3.7 x 10(12) per square centimeter by tuning the magnesium content in the barriers and the growth polarity. From the temperature dependence of the oscillation amplitude, the effective mass of the two-dimensional electrons was derived as 0.32 +/- 0.03 times the free electron mass. Demonstration of the quantum Hall effect in an oxide heterostructure presents the possibility of combining quantum Hall physics with the versatile functionality of metal oxides in complex heterostructures.

A comprehensive review of zno materials and devices

Abstract: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

Weyl and Dirac semimetals in three-dimensional solids

Abstract: Weyl and Dirac semimetals are three-dimensional phases of matter with gapless electronic excitations that are protected by topology and symmetry. As three-dimensional analogs of graphene, they have generated much recent interest. Deep connections exist with particle physics models of relativistic chiral fermions, and, despite their gaplessness, to solid-state topological and Chern insulators. Their characteristic electronic properties lead to protected surface states and novel responses to applied electric and magnetic fields. The theoretical foundations of these phases, their proposed realizations in solid-state systems, and recent experiments on candidate materials as well as their relation to other states of matter are reviewed.

Fundamentals of zinc oxide as a semiconductor

Abstract: In the past ten years we have witnessed a revival of, and subsequent rapid expansion in, the research on zinc oxide (ZnO) as a semiconductor. Being initially considered as a substrate for GaN and related alloys, the availability of high-quality large bulk single crystals, the strong luminescence demonstrated in optically pumped lasers and the prospects of gaining control over its electrical conductivity have led a large number of groups to turn their research for electronic and photonic devices to ZnO in its own right. The high electron mobility, high thermal conductivity, wide and direct band gap and large exciton binding energy make ZnO suitable for a wide range of devices, including transparent thin-film transistors, photodetectors, light-emitting diodes and laser diodes that operate in the blue and ultraviolet region of the spectrum. In spite of the recent rapid developments, controlling the electrical conductivity of ZnO has remained a major challenge. While a number of research groups have reported achieving p-type ZnO, there are still problems concerning the reproducibility of the results and the stability of the p-type conductivity. Even the cause of the commonly observed unintentional n-type conductivity in as-grown ZnO is still under debate. One approach to address these issues consists of growing high-quality single crystalline bulk and thin films in which the concentrations of impurities and intrinsic defects are controlled. In this review we discuss the status of ZnO as a semiconductor. We first discuss the growth of bulk and epitaxial films, growth conditions and their influence on the incorporation of native defects and impurities. We then present the theory of doping and native defects in ZnO based on density-functional calculations, discussing the stability and electronic structure of native point defects and impurities and their influence on the electrical conductivity and optical properties of ZnO. We pay special attention to the possible causes of the unintentional n-type conductivity, emphasize the role of impurities, critically review the current status of p-type doping and address possible routes to controlling the electrical conductivity in ZnO. Finally, we discuss band-gap engineering using MgZnO and CdZnO alloys.