Avram Bar-Cohen

Bio: Avram Bar-Cohen is an academic researcher from University of Maryland, College Park. The author has contributed to research in topics: Heat transfer & Heat sink. The author has an hindex of 50, co-authored 329 publications receiving 8329 citations. Previous affiliations of Avram Bar-Cohen include Auburn University & DARPA.

Thermal Characteristics of a Chip-Scale Two-Phase Microgap Cooler

Abstract: Two-phase heat transfer and pressure drop results for a chip-scale, uniformly heated, microgap channel, with nominal gap heights of 100, 200, and 500 μm and using HFE-7100 and FC-87 as the working fluids, are reported. Average heat transfer coefficients in the range of 5 to 30 kW/m2-K were observed, for exit qualities up to 60%. Local heat transfer coefficients, obtained through an inverse computational technique, are found to vary strongly with thermodynamic quality and to fall within ±30% of the predictions of the venerable Chen correlation.

Thermal design and optimization of staggered polymer pin fin natural convection heat sinks

Abstract: The design and optimization of a thermally conductive PPS polymer pin fin heat sink, for an advanced natural convection cooled microprocessor application, are described. The geometric dependence of heat dissipation and the relationships between the pin fin length, pin diameter, horizontal spacing, and pin fin density for a fixed base area and excess temperature are discussed. The coefficient of thermal performance, COP/sub T/, that relates cooling capability to the energy invested in the formation of the heat sink, has been determined for such heat sinks and compared with conventional aluminum heat sinks. The thermal performance results obtained confirm that PPS (polyphenylene sulphide) polymer heat sinks provide a promising alternative to heat sinks fabricated of conventional materials.

Thermal Isolation within High-Power 2.5D Heterogenously Integrated Electronic Packages

Abstract: We propose a two-pronged approach to reducing the impact of thermal cross-talk between components of disparate thermal operating points within a heterogeneously integrated electronic package. First, a low thermal conductivity interposer enhanced with an array of conductive thermal vias is employed to provide a high degree of lateral thermal isolation while providing adequate conduction in the vertical direction. Second, a "differential" embedded microfluidic cooling strategy is proposed that provides high rates of heat removal in the isolated high-power regions while using a low pumping cost background cooling for low-power regions. At the end of this paper, a case study is presented where required device separation is reduced three-fold and required pumping power is reduced by an estimated 40% compared to a silicon interposer with a uniform aggressive cooling strategy.

Modeling and Simulation Challenges in Embedded Two Phase Cooling: DARPA’s ICECool Program

Abstract: Modeling and simulation of two-phase phenomena, as well as their impact on electrical performance and physical integrity are critical to the success of embedded cooling strategies. In DARPA’s Intrachip/Interchip Embedded Cooling (ICECool) program, thermal/electrical/mechanical co-simulation and modeling tools are being applied to the analysis and design of RF GaN MMIC (Monolithic Microwave Integrated Circuit) Power Amplifiers (PA) and digital ICs, with the ultimate goal of achieving greater than 3X electronic performance improvement. This paper addresses various simulation strategies and numerical techniques adopted by the DARPA ICECool performers, with attention devoted to co-simulation through coupled iterations of thermal, mechanical and electrical behavior for capturing device characteristics and predicting reliability and “best in class” simulations that can provide an understanding of device behavior during rugged operating conditions impacted by multi-physics environments. The effect of CTE (Coefficient of Thermal Expansion) mismatch on bond and structural integrity, the impact of cooling fluid choice on performance, the factors affecting erosion/corrosion in the microchannels, as well as electro-migration limits and joule heating effects, will also be addressed. A separate discussion of various two-phase issues, including interface tracking, system pressure drops, conjugate heat transfer, estimating near wall heat transfer coefficients, and predicting CHF (Critical Heat Flux) and dryout is also provided.Copyright © 2015 by ASME

Light-emitting diodes

Abstract: Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

A review of Ga2O3 materials, processing, and devices

Abstract: Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond existing technologies due to its large bandgap. It is usually reported that there are five different polymorphs of Ga2O3, namely, the monoclinic (β-Ga2O3), rhombohedral (α), defective spinel (γ), cubic (δ), or orthorhombic (e) structures. Of these, the β-polymorph is the stable form under normal conditions and has been the most widely studied and utilized. Since melt growth techniques can be used to grow bulk crystals of β-GaO3, the cost of producing larger area, uniform substrates is potentially lower compared to the vapor growth techniques used to manufacture bulk crystals of GaN and SiC. The performance of technologically important high voltage rectifiers and enhancement-mode Metal-Oxide Field Effect Transistors benefit from the larger critical electric field of β-Ga2O3 relative to either SiC or GaN. However, the absence of clear demonstrations of p-type doping in Ga2O3, which may be a fundamental issue resulting from the band structure, makes it very difficult to simultaneously achieve low turn-on voltages and ultra-high breakdown. The purpose of this review is to summarize recent advances in the growth, processing, and device performance of the most widely studied polymorph, β-Ga2O3. The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed. Areas where continued development is needed to fully exploit the properties of Ga2O3 are identified.

Low loss dielectric materials for LTCC applications: a review

Abstract: Small, light weight and multifunctional electronic components are attracting much attention because of the rapid growth of the wireless communication systems and microwave products in the consumer electronic market. The component manufacturers are thus forced to search for new advanced integration, packaging and interconnection technologies. One solution is the low temperature cofired ceramic (LTCC) technology enabling fabrication of three-dimensional ceramic modules with low dielectric loss and embedded silver electrodes. During the past 15 years, a large number of new dielectric LTCCs for high frequency applications have been developed. About 1000 papers were published and ∼500 patents were filed in the area of LTCC and related technologies. However, the data of these several very useful materials are scattered. The main purpose of this review is to bring the data and science of these materials together, which will be of immense help to researchers and technologists all over the world. The comme...