Avram Bar-Cohen

Bio: Avram Bar-Cohen is an academic researcher from University of Maryland, College Park. The author has contributed to research in topics: Heat transfer & Heat sink. The author has an hindex of 50, co-authored 329 publications receiving 8329 citations. Previous affiliations of Avram Bar-Cohen include Auburn University & DARPA.

Heat Transfer and Two-Phase Flow Regimes in Manifolded Microgaps - R245fa Empirical Results

Abstract: Two-phase embedded cooling has great potential for meeting the increasing thermal management needs of high-heat flux electronics. Use of manifold microgap channels further enhances the effectiveness of embedded cooling while maintaining low pressure drop and pumping power and has demonstrated average channel wall heat transfer coefficients exceeding 45,000 W/m2K, with the dielectric refrigerant R245fa as the working fluid. The current R245fa study uses simultaneous high-speed imaging and infrared thermography to provide phenomenological insights into the flow behavior and its associated local heat transfer occurring on the manifolded microgap channel wall. The thermofluid behavior was found to display a strong dependence on the flow thermodynamic quality, with peak heat transfer coefficients occurring at approximately 30% quality and decreasing by a factor of 2–3 with further increases in quality.

Enhanced Hot Spot Cooling Using Bonded Superlattice Microcoolers With a Trench Structure

Abstract: In this paper, we describe how to use Si/SiGe superlattice microcoolers to cool the target hot spots and how a trench structure could enhance its cooling performance. The microcooler chip is gold fusion bonded with a 65 mum-thick silicon chip, where heaters are fabricated on the opposite of fusion bonding layer to simulate the hot spots. Our 3-D electrothermal simulations showed that with a trench structure, the maximum cooling and cooling power density could be doubled at hot spot region. Our experimental prototype also demonstrated a maximum cooling of ~ 2degC reduction at hot spot or a maximum cooling power density of 110 W/cm with trench structure as compared with the 0.8degC cooling without trench structure. This two-chip bonded configuration will allow the integration of spot coolers and ICs without impact on microelectronics processing process. It could be a potential on-chip hot spot cooling solution.

Thermofluid Design of Energy Efficient and Compact Heat Sinks

Abstract: A compact, energy efficient heat sink design methodology is presented for shrouded, parallel plate fins in laminar flow. The analytic model accounts for the sensible temperature rise of the air flowing between fins, convective heat transfer to the flowing stream, and conduction in the fins. To evaluate the efficiency of the air cooling system, consideration is also given to the determination of the fan pumping power. This paper focuses on the optimization of the heat sink-fan combination for energy efficiency, subject to volumetric constraints. The design optimum is found by matching the most efficient operating point of the fan with the corresponding optimum fin geometry. A series of parametric studies was completed to identify the sensitivity of the cooling solution to parametric variations. This numerically validated model has been used to visualize the parametric impact of dealing with “real world” manufacturing limitation in the development of thermal packaging solutions for notebook computers and other electronic products.© 2003 ASME

Light-emitting diodes

Abstract: Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

A review of Ga2O3 materials, processing, and devices

Abstract: Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond existing technologies due to its large bandgap. It is usually reported that there are five different polymorphs of Ga2O3, namely, the monoclinic (β-Ga2O3), rhombohedral (α), defective spinel (γ), cubic (δ), or orthorhombic (e) structures. Of these, the β-polymorph is the stable form under normal conditions and has been the most widely studied and utilized. Since melt growth techniques can be used to grow bulk crystals of β-GaO3, the cost of producing larger area, uniform substrates is potentially lower compared to the vapor growth techniques used to manufacture bulk crystals of GaN and SiC. The performance of technologically important high voltage rectifiers and enhancement-mode Metal-Oxide Field Effect Transistors benefit from the larger critical electric field of β-Ga2O3 relative to either SiC or GaN. However, the absence of clear demonstrations of p-type doping in Ga2O3, which may be a fundamental issue resulting from the band structure, makes it very difficult to simultaneously achieve low turn-on voltages and ultra-high breakdown. The purpose of this review is to summarize recent advances in the growth, processing, and device performance of the most widely studied polymorph, β-Ga2O3. The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed. Areas where continued development is needed to fully exploit the properties of Ga2O3 are identified.

Low loss dielectric materials for LTCC applications: a review

Abstract: Small, light weight and multifunctional electronic components are attracting much attention because of the rapid growth of the wireless communication systems and microwave products in the consumer electronic market. The component manufacturers are thus forced to search for new advanced integration, packaging and interconnection technologies. One solution is the low temperature cofired ceramic (LTCC) technology enabling fabrication of three-dimensional ceramic modules with low dielectric loss and embedded silver electrodes. During the past 15 years, a large number of new dielectric LTCCs for high frequency applications have been developed. About 1000 papers were published and ∼500 patents were filed in the area of LTCC and related technologies. However, the data of these several very useful materials are scattered. The main purpose of this review is to bring the data and science of these materials together, which will be of immense help to researchers and technologists all over the world. The comme...