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TL;DR: Interestingly, graphene syntheses using a Cu catalyst in APCVD processes at higher methane concentrations revealed that the growth is not self-limiting, which is in contrast to previous observations for the LPCVD case.
Abstract: In this article, the role of kinetics, in particular, the pressure of the reaction chamber in the chemical vapor deposition (CVD) synthesis of graphene using low carbon solid solubility catalysts (Cu), on both the large area thickness uniformity and the defect density are presented. Although the thermodynamics of the synthesis system remains the same, based on whether the process is performed at atmospheric pressure (AP), low pressure (LP) (0.1−1 Torr) or under ultrahigh vacuum (UHV) conditions, the kinetics of the growth phenomenon are different, leading to a variation in the uniformity of the resulting graphene growth over large areas (wafer scale). The kinetic models for APCVD and LPCVD are discussed, thereby providing insight for understanding the differences between APCVD vs LPCVD/UHVCVD graphene syntheses. Interestingly, graphene syntheses using a Cu catalyst in APCVD processes at higher methane concentrations revealed that the growth is not self-limiting, which is in contrast to previous observatio...
793 citations
TL;DR: In this paper, the authors present a review of the material properties, growth techniques, band structure and the main electronic devices of the Si/SiGe heterostructure system, in particular, the important device technologies in mainstream microelectronics.
Abstract: Silicon germanium (SiGe) has moved from being a research material to accounting for a small but significant percentage of manufactured semiconductor devices. This percentage is predicted to increase substantially as SiGe begins to be used in complementary metal oxide semiconductor (CMOS) technology in the future to substantially improve performance. It is the development of Si/SiGe heterostructures which has enabled band structure and strain engineering allowing Si/SiGe to be used in many different ways to improve conventional microelectronic device performance along with allowing new concepts to be explored. This paper presents a review of the material properties, growth techniques, band structure and the main electronic devices of the Si/SiGe heterostructure system. In particular, the important device technologies in mainstream microelectronics of the SiGe heterostructure bipolar transistor (HBT) and strained-Si CMOS will be reviewed before future device and optoelectronics concepts are explored.
536 citations
IBM1
TL;DR: In this article, the fundamental chemical principles underlying UHV CVD are described and a variety of unique devices and structures, e.g., high-speed graded-bandgap heterojunction bipolar transistors and n-type resonant tunneling diodes, are discussed.
Abstract: The fundamental chemical principles underlying ultra-high-vacuum chemical vapor deposition (UHV CVD) are described in this overview. A variety of unique devices and structures, e.g. high-speed graded-bandgap heterojunction bipolar transistors and n-type resonant tunneling diodes, are discussed. The role of fundamental interface chemistry in making such structures possible is considered. >
163 citations
TL;DR: In this article, the microstructure of boron-doped silicon nanowires was studied by scanning electron microscopy, TEM and electron energy-loss spectroscopy.
96 citations
TL;DR: In this article, the influence of the deposition conditions on the structure of chemically deposited polycrystalline-silicon films has been examined, and it was shown that the grain size increases with increasing film thickness and deposition temperature, ranging from less than 0.05 microm to more than 1 microm.
90 citations