In this paper we present a novel and versatile t e c h n i q u e f o r t h e p r o d u c t i o n o f u l t r a f i n e m e t a l p a r t i c l e s by evaporation from a temperature‐regulated oven containing a reduced atmosphere of an inert gas. An extensive investigation of particles of oxidized Al, with diameters of 3 to 6 nm, has been performed. We have also studied ultrafine particles of Mg,Zn, and Sn produced in the same manner. A supplementing investigation has been carried out for particles of Cr, Fe, Co, Ni, Cu, and Ga, as well as larger Al particles, produced by ’’conventional’’ inert‐gas evaporation from a resistive filament. Diameter as a function of evaporation rate, inert‐gas pressure, and the kind of inert gas are reported. Crystalline particles smaller than 20 nm look almost spherical in the electron microscope, while larger ones often display pronounced crystal habit. S i z e d i s t r i b u t i o n s have been investigated in detail, and consistently the logarithm of the particle diameter has a Gaussian distribution to a high precision for the smallest sizes, whereas larger particles deviate from such a simple behavior. A statistical growth model, based on the Central Limit Theorem, has been formulated for liquidlike coalescence of particles; this theory accounts satisfactorily for all our data, as well as for most size distributions published in the literature. Applications of the model to colloids, discontinuous films, and supported catalysts are discussed. By comparing size distributions for particles produced by a variety of techniques we found a number of empirical rules for the width of the distributions, as defined by a (geometric) standard deviation σ. For crystalline inert‐gas‐ evaporated particles we obtained consistently 1.36?σ?1.60; for coalescing islands in discontinuous films we found 1.22?σ?1.34; and similar rules are applicable to colloids, supported catalysts, and to ultrafine droplets.

Ultrafine metal particles

▪ Abstract Polycrystalline films have wide variety of applications in which their grain structures affect their performance and reliability. Thin film growth techniques and growth conditions affect grain shapes, the distribution of grain sizes, and the distribution of the crystallographic orientations of grains. Variations in these structural properties are affected by the conditions under which grain nucleation, growth, coarsening, coalescence, and thickening occur. General trends in structural evolution in polycystalline films, as a function of processing conditions and materials class, are discussed in terms of these fundamental kinetic processes.

Structure Evolution During Processing of Polycrystalline Films

This paper summarizes some of the essential aspects of silicon-nanowire growth and of their electrical properties. In the first part, a brief description of the different growth techniques is given, though the general focus of this work is on chemical vapor deposition of silicon nanowires. The advantages and disadvantages of the different catalyst materials for silicon-wire growth are discussed at length. Thereafter, in the second part, three thermodynamic aspects of silicon-wire growth via the vapor–liquid–solid mechanism are presented and discussed. These are the expansion of the base of epitaxially grown Si wires, a stability criterion regarding the surface tension of the catalyst droplet, and the consequences of the Gibbs–Thomson effect for the silicon wire growth velocity. The third part is dedicated to the electrical properties of silicon nanowires. First, different silicon nanowire doping techniques are discussed. Attention is then focused on the diameter dependence of dopant ionization and the influence of interface trap states on the charge carrier density in silicon nanowires. It is concluded by a section on charge carrier mobility and mobility measurements.

/pdf/silicon-nanowires-a-review-on-aspects-of-their-growth-and-20jrcf5p99.pdf

Silicon Nanowires: A Review on Aspects of their Growth and their Electrical Properties

Probing surface and interface morphology with Grazing Incidence Small Angle X-Ray Scattering

This article provides a perspective on solid oxide fuel cells operating at low temperature, defined here to be the range from ∼400 °C to 650 °C. These low-temperature solid oxide fuel cells (LT-SOFCs) have seen considerable research and development and are widely viewed as the “next generation” technology, following the 650–850 °C SOFCs that are currently undergoing commercialization. LT-SOFCs have potential advantages for conventional SOFC applications such as stationary power generation, and may be viable for new portable and transportation power applications, along with electrolytic fuel production and energy storage. The characteristics of electrolyte and electrode materials are reviewed, with a focus on materials that have demonstrated good properties and cell performance at low temperature. Only oxygen-ion-conducting electrolytes are considered here. Anode materials are discussed, primarily the various Ni–cermet anode compositions that yield good low-temperature performance. Mixed ionically and electronically conducting cathode materials are described in detail, reflecting the extensive research activity that has aimed at providing useful oxygen reduction kinetics at low operating temperature. Cell design, materials compatibility, processing methods, and resulting microstructures are discussed, along with their role in determining cell performance. Results from state of the art LT-SOFCs are presented, and future prospects are discussed.

B.K. Chakraverty

Papers

Grain size distribution in thin films—1. Conservative systems