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B. Mitra

Bio: B. Mitra is an academic researcher from Jadavpur University. The author has contributed to research in topics: Magnetic field & Superlattice. The author has an hindex of 8, co-authored 8 publications receiving 169 citations.

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TL;DR: In this paper, an attempt is made to study the effective electron mass in strained layer superlattices of non-parabolic semiconductors with graded structures under sirong magnetic quantization and to compare the same with the bulk specimens of the constituent materials, by formulating the appropriate magneto-dispersion laws.
Abstract: An attempt is made to study the effective electron mass in strained layer superlattices of non-parabolic semiconductors with graded structures under sirong magnetic quantization and to compare the same with the bulk specimens of the constituent materials, by formulating the appropriate magneto-dispersion laws. It is found, taking InAs/GaSb superlattice as an example, that the effective electron mass oscillates with the inverse quantizing magnetic field due to the Shubnikov-de Hass effect. The dependence of the effective mass on the magnetic quantum number in addition to Fermi energy is an intrinsic property of such semiconductor heterostructures. The stress makes the mass quantum number dependent in bulk specimens and even in the presence of broadening, the effective masses in superlattices exhibit significant oscillations with enhanced numerical values from that of the constituent semiconductors. Besides the effective electron masses also increase in an oscillatory way with increasing electron c...

41 citations

Journal ArticleDOI
TL;DR: In this paper, an attempt was made to study the Einstein relation for the diffusivity-mobility ration of the electrons of narrow-gap semiconductors under strong magnetic quantization in accordance with the three-band Kane model by incorporating spin and broadening.

32 citations

Journal ArticleDOI
TL;DR: In this paper, the authors define la masse effective des electrons dans les semi-conducteurs, etant liee a la mobilite des porteurs and define diverses definitions of the masse effective, the masse de la quantite de mouvement effective devrait etre la quantité de base
Abstract: La masse effective des electrons dans les semi-conducteurs, etant liee a la mobilite des porteurs, est un des parametres importants des dispositifs semi-conducteurs. Parmi les diverses definitions de la masse effective, la masse de la quantite de mouvement effective devrait etre la quantite de base

30 citations

Journal ArticleDOI
TL;DR: In this article, the authors investigated the thermoelectric power of the electrons in 3D quantum well structures of small-gap materials under cross field configuration by formulating a new electron energy spectrum within the framework of the k·p formalism.

23 citations

Journal ArticleDOI
TL;DR: In this paper, an attempt was made to study the field emitted current density from semiconductor superlattices under strong magnetic quantuzation in the presence of spin and broadening respectively.

21 citations


Cited by
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Journal ArticleDOI
TL;DR: In this paper, an attempt is made to study the effective electron mass in strained layer superlattices of non-parabolic semiconductors with graded structures under sirong magnetic quantization and to compare the same with the bulk specimens of the constituent materials, by formulating the appropriate magneto-dispersion laws.
Abstract: An attempt is made to study the effective electron mass in strained layer superlattices of non-parabolic semiconductors with graded structures under sirong magnetic quantization and to compare the same with the bulk specimens of the constituent materials, by formulating the appropriate magneto-dispersion laws. It is found, taking InAs/GaSb superlattice as an example, that the effective electron mass oscillates with the inverse quantizing magnetic field due to the Shubnikov-de Hass effect. The dependence of the effective mass on the magnetic quantum number in addition to Fermi energy is an intrinsic property of such semiconductor heterostructures. The stress makes the mass quantum number dependent in bulk specimens and even in the presence of broadening, the effective masses in superlattices exhibit significant oscillations with enhanced numerical values from that of the constituent semiconductors. Besides the effective electron masses also increase in an oscillatory way with increasing electron c...

41 citations

Journal ArticleDOI
TL;DR: In this article, a simple theoretical analysis of the effective electron mass (EEM) at the Fermi level for III-V, ternary and quaternary materials, on the basis of a newly formulated electron energy spectra in the presence of light waves whose unperturbed energy band structures are defined by the three-band model of Kane, is presented.
Abstract: We present a simple theoretical analysis of the effective electron mass (EEM) at the Fermi level for III–V, ternary and quaternary materials, on the basis of a newly formulated electron energy spectra in the presence of light waves whose unperturbed energy band structures are defined by the three-band model of Kane The solution of the Boltzmann transport equation on the basis of this newly formulated electron dispersion law will introduce new physical ideas and experimental findings under different external conditions It has been observed that the unperturbed isotropic energy spectrum in the presence of light changes into an anisotropic dispersion relation with the energy-dependent mass anisotropy In the presence of light, the conduction band moves vertically upward and the band gap increases with the intensity and colours of light It has been found, taking n-InAs, n-InSb, n-Hg1−xCdxTe and n-In1−xGaxAsyP1−y lattice matched to InP as examples, that the EEM increases with increasing electron concentration, intensity and wavelength in various manners The strong dependence of the effective momentum mass (EMM) at the Fermi level on both the light intensity and wavelength reflects the direct signature of the light waves which is in contrast with the corresponding bulk specimens of the said materials in the absence of photo-excitation The rate of change is totally band-structure-dependent and is influenced by the presence of the different energy band constants The well known result for the EEM at the Fermi level for degenerate wide gap materials in the absence of light waves has been obtained as a special case of the present analysis under certain limiting conditions, and this compatibility is the indirect test of our generalized formalism

23 citations

Journal ArticleDOI
TL;DR: In this paper, the authors studied the thermoelectric power of the electrons under magnetic quantization in III-V, II-VI, PbTe/PbSnTe and strained layer superlattices with graded interfaces and compared the same with the corresponding bulk specimens of the constituent materials.
Abstract: We study the thermoelectric power of the electrons under magnetic quantization in III–V, II–VI, PbTe/PbSnTe and strained layer superlattices with graded interfaces and compare the same with the corresponding bulk specimens of the constituent materials by formulating the respective expressions incorporating the broadening. It is found, by taking GaAs/Ga1−x Al x As, CdS/CdTe, PbTe/PbSnTe and InAs/GaSb superlattices with graded interfaces as examples, that the thermoelectric power exhibits oscillatory dependence with the inverse quantizing magnetic field due to Shubnikov-de Hass effect and increases with decreasing electron concentration in an oscillatory manner in all the aforementioned cases. The thermopower in graded superlattices is greater than that of constituent bulk materials together with the fact that the oscillations in superlattices show up much more significantly as compared to the respective constituent materials. In addition, the well-known expressions for bulk specimens of wide-gap semiconductors have also been obtained as special cases from our generalized expressions under certain limiting conditions.

23 citations

Journal ArticleDOI
TL;DR: In this article, an attempt is made to study the Einstein relation for the diffusivity-mobility ratio of the electrons in degenerate n-type small-gap semiconductors under strong magnetic field on the basis of three-band Kane model without any approximations of band parameters and incorporating the electron spin and broadening of Landau levels.
Abstract: An attempt is made to study the Einstein relation for the diffusivity‐mobility ratio of the electrons in degenerate n‐type small‐gap semiconductors under strong magnetic field on the basis of three‐band Kane model without any approximations of band parameters and incorporating the electron spin and broadening of Landau levels, respectively. It is found, taking n‐Hg1−xCdxTe as an example, that the Einstein relation exhibits an oscillatory magnetic field dependence due to Shubnikov–de Haas effect and decreases with increasing alloy composition. Besides the same ratio increases with increasing electron concentration and is in close agreement with the suggested experimental method of determining the Einstein relation in degenerate semiconductors having arbitrary dispersion laws. In addition, the corresponding well‐known results of parabolic semiconductors both in the presence and absence of magnetic field have been obtained from the generalized expressions under certain limiting conditions.

23 citations