scispace - formally typeset
Search or ask a question
Author

B.S. Li

Bio: B.S. Li is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Annealing (metallurgy) & Transmission electron microscopy. The author has an hindex of 7, co-authored 10 publications receiving 126 citations. Previous affiliations of B.S. Li include Southwest University of Science and Technology.

Papers
More filters
Journal ArticleDOI
TL;DR: In this article, the fraction of the implanted fluence used to pressurize blister cavities was deduced by combining experimental results with Finite Element Method (FEM) modeling.

34 citations

Journal ArticleDOI
11 Nov 2011-Vacuum
TL;DR: In this paper, the authors investigated the lattice damage and evolution in 6H-SiC wafers under He + ion irradiation by the combination of Rutherford backscattering in channeling geometry (RBS/C), Raman spectroscopy, UV visible spectrograms and transmission electron microscopy (TEM).

33 citations

Journal ArticleDOI
01 Mar 2015-Vacuum
TL;DR: The formation of He bubbles observed in the hot-pressed polycrystalline SiC samples implanted with 230-keV He ions with fluences ranging from 5-10 15/cm 2 to 1-×-10 17 /cm 2 at room temperature and subsequently annealed at 1000-°C for 30min was investigated in this article.

30 citations

Journal ArticleDOI
TL;DR: In this paper, the authors investigated the recrystallization process of amorphous 6H-SiC created by 15-keV He ion implantation to doses of 15-10 16, 5-15 16, and 1-×-10 17 ǫ −2 at room temperature (RT) followed by annealing ranging from 600-°C to 900-degree for 30min.
Abstract: Solid phase epitaxial growth of amorphous 6H-SiC created by 15 keV He ion implantation to doses of 15 × 10 16 , 5 × 10 16 and 1 × 10 17 cm −2 at room temperature (RT) followed by annealing ranging from 600 °C to 900 °C for 30 min was investigated The recrystallization process was investigated via cross-sectional transmission electron microscopy (XTEM) Recrystallization initially nucleates and grows at the interface between the amorphous layer and 6H-SiC substrate In the middle of the amorphous layer, recrystallization nucleation is inhibited Recrystallization rate is related to the implantation-induced damage and concentration of He impurity The Fourier transformed images denote that the region of recrystallization contains 3C-SiC and 6H-SiC with different crystalline orientations Besides, for the 1 × 10 17 cm − 2 implanted sample, partial areas are kept amorphous in the damaged layer The threshold temperature of full recrystallization of He ion-implantation-induced amorphization in 6H-SiC and the previous observations on other ions implantation, such as Ne, Ar, Xe etc is compared The possible reasons are discussed

24 citations

Journal ArticleDOI
TL;DR: In this paper, the authors investigated the mechanisms of ion-cut in H2+-implanted GaN by analyzing microstructural features of H2-implants at room temperature, 573 K and 723 K.

9 citations


Cited by
More filters
31 Dec 1995
TL;DR: In this article, the amorphization of polycrystalline Al2O3, magnesium aluminate spinel (MgAl2O4), MgO, Si3N4, and SiC were irradiated with various ions at 200-450 K and microstructures were examined following irradiation using cross-section TEM.
Abstract: Polycrystalline Al2O3, magnesium aluminate spinel (MgAl2O4), MgO, Si3N4, and SiC were irradiated with various ions at 200-450 K, and microstructures were examined following irradiation using cross-section TEM. Amorphization was not observed in any of the irradiated oxide ceramics, despsite damage energy densities up to {similar_to}7 keV/atom (70 displacements per atom). On the other hand, SiC readily amorphized after damage levels of {similar_to}0.4 dpa at room temperature (RT). Si3N4 exhibited intermediate behavior; irradiation with Fe{sup 2+} ions at RT produced amorphization in the implanted ion region after damage levels of {similar_to}1 dpa. However, irradiated regions outside the implanted ion region did not amorphize even after damage levels > 5 dpa. The amorphous layer in the Fe-implanted region of Si3N4 did not appear if the specimen was simultaneoulsy irradiated with 1-MeV He{sup +} ions at RT. By comparison with published results, it is concluded that the implantation of certain chemical species has a pronounced effect on the amorphization threshold dose of all five materials. Intense ionizing radiation inhibits amorphization in Si3N4, but does not appear to significantly influence the amorphization of SiC.

160 citations

Journal ArticleDOI
TL;DR: In this paper, the microstructural changes induced by irradiation and subsequent annealing were investigated to assess the suitability of 6H-SiC as a structural material for nuclear applications.

62 citations

Journal ArticleDOI
TL;DR: The microstructure evolution of hydrogen-implanted 6H-SiC at different temperatures and fluences is investigated by using various experimental techniques in this article, where the authors found that both migration and coalescence are energetically cheaper in the case of H compared to He.

52 citations

Journal ArticleDOI
TL;DR: Fe-12-wt% Cr model alloy samples were implanted by 250 keV He2+ ions to three different fluencies (3, 9, and 1.5 cm−2) at T

35 citations

Journal ArticleDOI
TL;DR: In this article, the fraction of the implanted fluence used to pressurize blister cavities was deduced by combining experimental results with Finite Element Method (FEM) modeling.

34 citations