B. T. Liu

TL;DR: Enhanced polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3, and combined functional responses in thin film form present an opportunity to create and implement thin film devices that actively couple the magnetic and ferroelectric order parameters.

TL;DR: The results show that, compared to the single-layer counterpart, transistors of few MoS2 layers exhibit excellent sensitivity, recovery, and ability to be manipulated by gate bias and green light, and ab initio DFT calculations show that the charge transfer is the reason for the decrease in resistance in the presence of applied field.

TL;DR: Uniform encapsulation of MoS(2) transistor structures with silicon nitride grown by plasma-enhanced chemical vapor deposition is effective in minimizing the hysteresis, while the device mobility is improved by over 1 order of magnitude.

TL;DR: Room-temperature, bottom-gate, field-effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported.

TL;DR: In this article, the preparation, isolation and rapid unambiguous characterization of large size ultrathin layers of MoS2, GaS, and GaSe deposited onto SiO2/Si substrates is reported.