B. Vinter

Bio: B. Vinter is an academic researcher. The author has contributed to research in topics: Displacement current & Logic gate. The author has an hindex of 1, co-authored 1 publications receiving 6 citations.

The Two-Dimensional Electron Gas Field Effect Transistor

Abstract: A field effect transistor (FET) is a semiconductor device in which the current between two contacts — source and drain — is controlled by the voltage on a third contact — the gate. The role of such devices in electronic circuits is simple in principle. In logic circuits it functions as a switch — depending on the gate voltage the connection between source and drain is broken or closed — and in analogue circuits a small time-varying signal on the gate yields a time-varying current between source and drain, and since the gate current ideally is purely a displacement current, a very small input power can be amplified.

Calculation of phonon‐assisted tunneling between two quantum wells

Abstract: We have calculated the longitudinal optical phonon scattering between two subbands of a system of two coupled quantum wells. Our model takes the delocalization of the wave function over the whole structure into account, thus avoiding the shortcomings of earlier computations for thin barriers. The dependence on the various parameters (width of the wells and of the barrier, band offset, voltage drop between the wells, temperature, and effective mass of carriers) is discussed and illustrated.

Tunneling transfer field-effect transistor: A negative transconductance device

Abstract: A double channel field‐effect structure is proposed in which the resonant tunneling between states in either part of the channel is employed to control the parallel transport in the channel. Realistic calculations of the conductance in this structure show that one can use it to design a negative transconductance device or as a velocity field transistor with much improved mobility modulation.

Modeling of MODFETs

Abstract: Accurate modeling of MODFETs and of certain novel structures recently proposed requires that a number of physical phenomena occurring in these devices be considered. Among these, some electron dynamic properties of the two-dimensional gas, the influence of deep levels of the doped AlGaAs layers, and the influence of the source parasitic access impedance are reviewed. The presently available models can roughly be sorted into three classes: the particle or Monte Carlo models, the two-dimensional solving methods of semiconductor equations, and the simpler one-dimensional or analytical models. After a brief review of the physical bases on which the models rely, their main capabilities and ranges of applicability are discussed. Some conclusions are drawn as to the effort which must be developed in the near future to improve MODFET modeling. It is recommended that simulations of devices such as SISFETs, multichannel structures, and pseudomorphic AlGaAs/InGaAs transistors be undertaken. >

Charge dynamics in heterostructure Schottky-gate capacitors and their influence on the transconductance and low-frequency capacitance of MODFETs

Abstract: The authors present a computer investigation of the gate capacitance and transconductance characteristics of MODFETs and related capacitors. The quantum-mechanically predicted behavior of single- and multiple-heterostructure transistors is in excellent agreement with experiments presented in the literature. The donor level energy is shown to affect the transconductance and capacitance characteristics directly. The capacitance of multiple-heterojunction devices is predicted to exhibit a staircase nature with possible applications in n-ary logic circuits. A critical analysis of the application of C-V profiling techniques to heterostructure capacitors is also presented. >