B
Bart-Hendrik Huisman
Researcher at Philips
Publications - 24
Citations - 3219
Bart-Hendrik Huisman is an academic researcher from Philips. The author has contributed to research in topics: Transistor & Organic semiconductor. The author has an hindex of 14, co-authored 24 publications receiving 3121 citations.
Papers
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Journal ArticleDOI
Flexible active-matrix displays and shift registers based on solution-processed organic transistors.
Gerwin H. Gelinck,H. Edzer A. Huitema,Erik van Veenendaal,Eugenio Cantatore,Laurens Schrijnemakers,Jan B.P.H. Philips Ip Standards Van Der Putten,Tom C. T. Geuns,Monique J. Beenhakkers,Jacobus Bernardus Giesbers,Bart-Hendrik Huisman,Eduard J. Meijer,Estrella Mena Benito,Fredericus J. Touwslager,Albert W. Marsman,Bas Jan Emile Van Rens,Dago M. de Leeuw +15 more
TL;DR: Flexible active-matrix monochrome electrophoretic displays based on solution-processed organic transistors on 25-μm-thick polyimide substrates based on 1,888 transistors are demonstrated, which are the largest organic integrated circuits reported to date.
Journal ArticleDOI
Solution-processed ambipolar organic field-effect transistors and inverters.
Eduard J. Meijer,Eduard J. Meijer,Dago M. de Leeuw,Sepas Setayesh,E. van Veenendaal,Bart-Hendrik Huisman,Paul W. M. Blom,Jan C. Hummelen,Ullrich Scherf,T. M. Klapwijk +9 more
TL;DR: In this article, the authors demonstrate that hole transport and electron transport are both generic properties of organic semiconductors and combine the organic ambipolar transistors into functional CMOS-like inverters.
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Switch-on voltage in disordered organic field-effect transistors
Eduard J. Meijer,C. Tanase,P.W.M. Blom,E. van Veenendaal,Bart-Hendrik Huisman,Dago M. de Leeuw,T. M. Klapwijk +6 more
TL;DR: In this article, the flatband voltage for disordered organic field effect transistors is defined as a characterization parameter, and the transfer characteristics of the solution processed organic semiconductors pentacene, poly(2,5-thienylene vinylene) and poly(3-hexyl thiophene) are modeled as a function of temperature and gate voltage with a hopping model.
Journal ArticleDOI
Scaling behavior and parasitic series resistance in disordered organic field-effect transistors
Eduard J. Meijer,Gerwin H. Gelinck,E. van Veenendaal,Bart-Hendrik Huisman,Dago M. de Leeuw,T.M. Klapwijk +5 more
TL;DR: In this article, the scaling behavior of the transfer characteristics of disordered organic thin-film transistors with channel length was investigated, and the authors found that the parasitic resistance decreases with increasing field effect mobility.
Journal ArticleDOI
Oxygen-induced quenching of photoexcited states in polythiophene films
Larry Lüer,Hans-Joachim Egelhaaf,Dieter Oelkrug,Giulio Cerullo,Guglielmo Lanzani,Bart-Hendrik Huisman,Dago M. de Leeuw +6 more
TL;DR: In this paper, the authors investigated the kinetics of fluorescence quenching (FQ) in thin films (d≈100 nm-12 μm) of regioregular polyalkylthiophenes upon exposure to oxygen.