Bengt Gunnar Svensson

TL;DR: Using EPR and deep-level transient spectroscopy, it is shown that the two most common defects in as-grown 4H-SiC--the Z(1/2) lifetime-limiting defect and the EH(7) deep defect--are related to the double acceptor and single donor levels of V(C), respectively.

TL;DR: In this article, the optical properties of zinc monochalcogenides with zinc-blende-and wurtzite-type structures were studied using the ab initio density functional method within the local density approximation (LDA), generalized-gradient approximation, and $\mathrm{LDA}+U$ approaches.

TL;DR: Using a combination of deep level transient spectroscopy, secondary ion mass spectrometry, proton irradiation, and hybrid functional calculations, this article identified two similar deep levels that are associated with Fe impurities and intrinsic defects in bulk crystals and molecular beam epitaxy and hydride vapor phase epitaxi-grown epilayers of β-Ga2O3.

TL;DR: In this paper, single crystalline bulk and epitaxially grown gallium oxide (β-Ga2O3) was irradiated by 0.6 and 1.9 MeV protons to doses ranging from 5 × 109 to 6 × 1014 cm−2 in order to study the impact on charge carrier concentration and electrically active defects.

TL;DR: In this article, a photoluminescence study was performed at different temperatures on bulk ZnO samples annealed in zinc- and oxygen-rich atmospheres, where different annealing conditions create oxygen and zinc vacancies in a controlled way in the ZnOs samples.