Bernd Tillack

Bio: Bernd Tillack is an academic researcher from Innovations for High Performance Microelectronics. The author has contributed to research in topics: BiCMOS & Heterojunction bipolar transistor. The author has an hindex of 29, co-authored 220 publications receiving 3632 citations. Previous affiliations of Bernd Tillack include Leibniz Institute for Neurobiology & Korea University.

SiGe HBT technology with f T /f max of 300GHz/500GHz and 2.0 ps CML gate delay

Abstract: A SiGe HBT technology featuring f T /f max /BV CEO =300GHz/500GHz/1.6V and a minimum CML ring oscillator gate delay of 2.0 ps is presented. The speed-improvement compared to our previous SiGe HBT generations originates from lateral device scaling, a reduced thermal budget, and changes of the emitter and base composition, of the salicide resistance as well as of the low-doped collector formation.

Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$ -Based RRAM Devices

Abstract: Back-end-of-line integrated 1 × μm2 TiN/HfO2/Ti/TiN MIM memory devices in a 0.25- μm complementary metal-oxide-semiconductor technology were built to investigate the conduction mechanism and the resistive switching behavior as a function of temperature. The temperature-dependent I- V characteristics in fresh devices are attributed to the Poole-Frenkel mechanism with an extracted trap energy level at φ ≈ 0.2 eV below the HfO2 conduction band. The trap level is associated with positively charged oxygen vacancies. The electroformed memory cells show a stable bipolar switching behavior in the temperature range from 213-413 K. The off -state current increases with temperature, whereas the on-state current can be described by a weak metallic behavior. Furthermore, the results suggest that the I-V cycling not only induces significant changes in the electrical properties of the MIM memory devices, i.e., the increase in the off-state current, but also stronger temperature dependence. The temperature effect on the on-state and off-state characteristics is modeled within the framework of the quantum point-contact model for dielectric breakdown using an effective temperature-dependent confinement potential.

A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f $_{T} $ /f $_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps

Abstract: A 0.13 μm SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies fT of 240 GHz, maximum oscillation frequencies fmax of 330 GHz, and breakdown voltages BVCEO of 1.7 V along with high-voltage HBTs (fT = 50 GHz,fmax = 130 GHz, BVCEO = 3.7 V) integrated in a dual gate oxide RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators with fundamental-mode oscillation frequencies above 200 GHz are demonstrated.

Novel collector design for high-speed SiGe:C HBTs

Abstract: We describe a novel collector design for high-frequency SiGe:C HBTs without deep trenches and with low-resistance collectors formed by high-dose ion implantation after shallow trench formation. f/sub T/ values of 200 GHz at BV/sub CEO/=2.0 V and ring oscillator delays of 4.3 ps are obtained. Excellent static characteristics and high yield were achieved for the HBT module integrated in a 0.25 /spl mu/m CMOS platform.

A 820GHz SiGe chipset for terahertz active imaging applications

Abstract: The spatial resolution of microwave and mmWave imaging systems can be improved by an increase of their operating frequencies into the submillimeter-wave range (300GHz to 3THz). Electronic terahertz sources and receivers are presently dominated by III/V semiconductor and waveguide packaging technologies. Multipliers and mixers capable of an output power of 1.4mW at 875GHz [1], as well as a conversion loss of 9.25dB at 850GHz [2], have been demonstrated in remote sensing and radio astronomy applications. However, short-range active terahertz imaging systems exhibit less stringent link-budgets, thus opening up new opportunities for highly integrated low-cost silicon TX and RX front-ends. Previous circuit design examples include a 410GHz CMOS VCO in a 45nm technology capable of an output power of −47dBm [3], as well as a 650GHz subharmonic receiver with a 44dB noise figure [4]. In this paper, recent advances in SiGe HBT device technology [5] are used to demonstrate a 820GHz TX/RX chipset for active terahertz imaging applications.

Metal–Oxide RRAM

Abstract: In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application. A review of recent development of large-scale RRAM arrays is given. Issues such as uniformity, endurance, retention, multibit operation, and scaling trends are discussed.

IEEE Transactions on Microwave Theory and Techniques and Antennas and Propagation Announce a Joint Special Issue on Ultra-Wideband (UWB) Technology

Abstract: Before the emergence of ultra-wideband (UWB) radios, widely used wireless communications were based on sinusoidal carriers, and impulse technologies were employed only in specific applications (e.g. radar). In 2002, the Federal Communication Commission (FCC) allowed unlicensed operation between 3.1–10.6 GHz for UWB communication, using a wideband signal format with a low EIRP level (−41.3dBm/MHz). UWB communication systems then emerged as an alternative to narrowband systems and significant effort in this area has been invested at the regulatory, commercial, and research levels.

On-chip light sources for silicon photonics

Abstract: Hybrid silicon lasers based on bonded III–V layers on silicon are currently the best contenders for on-chip lasers for silicon photonics. On-chip silicon light sources are highly desired for use as electrical-to-optical converters in silicon-based photonics. Zhiping Zhou and Bing Yin of Peking University in China and Jurgen Michel of Massachusetts Institute of Technology assess the three main contenders for such light sources: erbium-based light sources, germanium-on-silicon lasers and III-V-based silicon lasers. They consider operating wavelength, pumping conditions, power consumption, thermal stability and fabrication process. The scientists regard the power efficiencies of electrically pumped erbium-based lasers as being too low and the threshold currents of germanium lasers as being too high. They conclude that III–V quantum dot lasers monolithically grown on silicon show the most promise for realizing on-chip lasers.