B
Bhawani Shankar
Researcher at Indian Institute of Science
Publications - 31
Citations - 237
Bhawani Shankar is an academic researcher from Indian Institute of Science. The author has contributed to research in topics: Schottky diode & High-electron-mobility transistor. The author has an hindex of 7, co-authored 23 publications receiving 150 citations. Previous affiliations of Bhawani Shankar include Central Electronics Engineering Research Institute & Birla Institute of Technology and Science.
Papers
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Journal ArticleDOI
Capacitance–conductance spectroscopic investigation of interfacial oxide layer in Ni/4H–SiC (0 0 0 1) Schottky diode
TL;DR: In this paper, the interface properties of a process-induced thin interfacial oxide layer present between Ni and 4H-SiC substrate was examined systematically for fabricated Ni/4H−SiC Schottky barrier diodes and their contribution in the form of interface traps level density was investigated employing capacitance-conductance (C-C) spectroscopy techniques.
Journal ArticleDOI
Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By ${\mathrm{Al}}_{x}{\mathrm{Ti}}_{1-x}$ O Based Gate Stack Engineering
Sayak Dutta Gupta,Ankit Soni,Vipin Joshi,Jeevesh Kumar,Rudrarup Sengupta,Heena Khand,Bhawani Shankar,Nagaboopathy Mohan,Srinivasan Raghavan,Navakanta Bhat,Mayank Shrivastava +10 more
TL;DR: In this article, the authors have experimentally demonstrated enhancement mode (e-mode) AlGaN/GaN high-electron-mobility transistor (HEMT) operation by integrating p-type high-kappa Ω(kappa ) based gate stack.
Proceedings ArticleDOI
Unique ESD behavior and failure modes of AlGaN/GaN HEMTs
TL;DR: In this article, the effect of MESA isolation and gate finger on the ESD behavior of AlGaN/GaN HEMTs was analyzed and a unique power law like behavior was found.
Journal ArticleDOI
ESD Reliability of AlGaN/GaN HEMT Technology
TL;DR: In this article, the role of Schottky gate and MESA was investigated using special test structures, and a unique power-law-like behavior was found for AlGaN/GaN HEMTs.
Proceedings ArticleDOI
Trap assisted avalanche instability and safe operating area concerns in AlGaN/GaN HEMTs
Bhawani Shankar,Ankit Soni,Manikant Singh,Rohith Soman,Hareesh Chandrasekar,Nagaboopathy Mohan,Neha Mohta,Nayana Ramesh,Shreesha Prabhu,Abhay Kulkarni,Digbijoy N. Nath,Rangarajan Muralidharan,K. N. Bhat,Srinivasan Raghavan,Navakant Bhat,Mayank Shrivastava +15 more
TL;DR: In this paper, the authors reported the very first systematic study on the physics of avalanche instability and SOA concerns in AlGaN/GaN HEMTs using sub-μs pulse characterization, post stress degradation analysis, well calibrated TCAD simulations and failure analysis by SEM and TEM.