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Design Of Analog Cmos Integrated Circuits

A simplified method for measuring the effective photon lifetime in an optical resonator was developed. The technique requires the passage of a modulated continuous-wave laser beam through the resonator and the measurement of the resultant shift in the phase of the transmitted intensity. The method not only permits a quick and precise measurement of the mirror reflectances, but also permits these measurements to be in situ. Such an 'on the spot' evaluation capability should be extremely useful in applications ranging from the investigation of new laser systems to the development of improved optical coatings. The method is also sensitive to the effects of absorption, scattering, and transmission from elements in the cavity. Cavity losses smaller than 100 ppm were detected.

Sensitive measurement of photon lifetime and true reflectances in an optical cavity by a phase shift method. Technical report

ZnO p-n junction light-emitting diodes (LEDs) were fabricated on c-plane Al2O3 substrates by plasma-assisted molecular beam epitaxy. Gas mixture of N2 and O2 was used as the p-type dopant, by which the double-donor doping of N2(O) can be avoided significantly. The fabricated p-type ZnO layers have a higher hole density and carrier mobility. The LEDs showed a very good rectification characteristic with a low threshold voltage of 4.0V even at a temperature above 300K. The LEDs can even emit intensive electroluminescence in the blue-violet region at the temperature of 350K. The blue-violet emission was attributed to the donor-acceptor pair recombination at the p-type layer of the LED.

Room temperature p-n ZnO blue-violet light-emitting diodes

Chlorophyll a Fluorescence – A Signature of Photosynthesis. Advances in Photosynthesis and Respiration, vol. 19, E. Papageorgiou, G.C. Govindjee (Eds.). Springer, Dordrecht, The Netherlands (2004), (820pp., price: Euro 270.00, GBP 187.00, USD 349.00), ISBN: 1-4020-3217-X

Nanocrystalline ZnO particles were prepared using the high-energy ball milling technique and investigated with electron paramagnetic resonance (EPR), impedance, and Raman spectroscopy to reveal the origin of surface and core defects. We observed two distinct EPR signals with different g-factors, g ∼ 2.0 and ∼1.96, indicating EPR-active defects on the surface and core, respectively. Using the semi-empirical core-shell model, we identified that sufficiently small nanocrystals (below 30 nm) can show p-type character. The model can also explain the origin of the non-linearity of the U-I behaviour in nanocrystalline ZnO.

Investigation of intrinsic defects in core-shell structured ZnO nanocrystals

Donor–acceptor pair luminescence of nitrogen doping p-type ZnO by plasma-assisted molecular beam epitaxy

A novel cavity ring-down (CRD) technique, based on the optical feedback effect of Fabry-Perot diode lasers, is developed for accurate reflectivity measurement of highly reflective cavity mirrors. The strong optical feedback, including the direct reflection from the front cavity mirror of a linear ring-down cavity, is re-injected into the oscillator cavity of the diode laser, and large resonant peaks are observed in the ring-down cavity output signals. The diode laser is switched off by a threshold circuit when the amplitude of a resonant peak exceeds a pre-defined threshold. Exponentially decayed signals recorded immediately after switching off the laser are used to determine the cavity decay time. The ultra-high reflectivity of cavity mirrors is measured to be 99.99606% with a reproducibility of 0.00003%. Compared with the previous phase-shift CRD technique, the signal-to-noise ratio of the cavity output signals is improved with an enhancement factor of over 100.

Optical feedback cavity ring-down technique for accurate measurement of ultra-high reflectivity

The existence of buried oxide (BOX) layer and the strong coupling effect between the front and back channels can worsen the radiation-induced degradation on fully depleted silicon-on-insulator (FDSOI) device. To mitigate the radiation impact, a new structure named double SOI is introduced in this paper. This new structure exhibits potential benefits of reducing the radiation-induced degradation effectively and independently, thanks to the additional electrode, which can be used to control the internal electrical field of the BOX layer. With this structure, FDSOI device parameter degradation due to total dose is studied, and some abnormal phenomena, such as the transconductance hump and the mobility enhancement, are observed and discussed. Sentaurus TCAD simulations are used for further analysis. Moreover, the impact of negative back-gate bias to transistor parameter degradation is investigated, and an improved back-gate compensation strategy is proposed. Technology improvement such as thinning the BOX on total ionizing dose (TID) amelioration is also discussed with TCAD simulation.

An Effective Method to Compensate Total Ionizing Dose-Induced Degradation on Double-SOI Structure

The total ionizing dose response of bulk nFinFETs with multiple gate lengths and multiple fins is investigated for on-state bias condition. Experiments and Technology Computer Aided Design simulations were performed to analyze the effect of the trapped charges in the gate oxide and shallow trench isolation (STI) oxide on the threshold voltage and transconductance of the devices. The increases in the threshold voltage and transconductance are observed after X-ray irradiation. The positive shift of the threshold voltage is caused by the net negative charges trapped in the gate oxide. The simulation results show that the trapped holes in the STI oxide reduce the electric field and increase the electron mobility in channel near the fin bottom, which is the major contribution to the increased transconductance. An interesting phenomenon was also observed that the threshold voltage continues to increase during the annealing process, whereas the transconductance decreases. These results suggest that there may also be a small amount of trapped holes in gate oxide during irradiation, and those trapped holes are compensated by electrons transporting from the silicon during the anneal, leading to further positive shift of the threshold voltage. Moreover, the decrease in transconductance is mainly introduced by the neutralization of the trapped holes at STI/silicon interface.

Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation

In our work, insights into the total dose response and native point defect behavior in the Al2O3 gate dielectric during irradiation were gained by gamma-ray irradiation experiments and first-principles calculations. It is found that the O vacancy (VO) can act as a hole trap in the Al2O3 gate dielectric during irradiation, leading to the negative shift of the capacitance–voltage (C–V) curves of the Al2O3-based metal–oxide–semiconductor (MOS) structure. Our calculations show that the neutral defect VO becomes a +2 charged center after irradiation, and the positively charged VO is a kind of conductive path for electrons, which contributes to an increase of the leakage current in the irradiated MOS capacitors. Additionally, the trapped holes are accumulated with irradiation doses, which can lower the barrier height of the Al2O3 gate oxide and further cause the increase of the leakage current. The other native point defects in the Al2O3 layer, such as aluminum vacancy (VAl), aluminum interstitial (Ali) and oxygen interstitial (Oi), only act as fixed charge centers during irradiation. Net negative charges existing in the Al2O3 layers before irradiation are mainly induced by the negatively charged defects of VAl and Oi.

https://iopscience.iop.org/article/10.1088/1361-6641/aada7a/pdf

Binhong Li

Papers

Donor–acceptor pair luminescence of nitrogen doping p-type ZnO by plasma-assisted molecular beam epitaxy

Optical feedback cavity ring-down technique for accurate measurement of ultra-high reflectivity

An Effective Method to Compensate Total Ionizing Dose-Induced Degradation on Double-SOI Structure

Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation

Total dose effect of Al2O3-based metal–oxide–semiconductor structures and its mechanism under gamma-ray irradiation