Bipul C. Paul

Bio: Bipul C. Paul is an academic researcher from GlobalFoundries. The author has contributed to research in topics: Transistor & Low-power electronics. The author has an hindex of 30, co-authored 115 publications receiving 4187 citations. Previous affiliations of Bipul C. Paul include Stanford University & Purdue University.

Circuit Failure Prediction and Its Application to Transistor Aging

Abstract: Circuit failure prediction predicts the occurrence of a circuit failure before errors actually appear in system data and states. This is in contrast to classical error detection where a failure is detected after errors appear in system data and states. Circuit failure prediction is performed during system operation by analyzing the data collected by sensors inserted at various locations inside a chip. We demonstrate this concept of circuit failure prediction for a dominant PMOS aging mechanism induced by negative bias temperature instability (NBTI). NBTI-induced PMOS aging slows down PMOS transistors over time. As a result, the speed of a chip can significantly degrade over time and can result in delay faults. The traditional practice is to incorporate worst-case speed margins to prevent delay faults during system operation due to NBTI aging. A new sensor design integrated inside a flip-flop enables efficient circuit failure prediction at a low cost. Simulation results using 90nm and 65nm technologies demonstrate that this technique can significantly improve system performance by enabling close to best-case design instead of traditional worst-case design.

Impact of NBTI on the temporal performance degradation of digital circuits

Abstract: Negative bias temperature instability (NBTI) has become one of the major causes for reliability degradation of nanoscale circuits. In this letter, we propose a simple analytical model to predict the delay degradation of a wide class of digital logic gate based on both worst case and activity dependent threshold voltage change under NBTI. We show that by knowing the threshold voltage degradation of a single transistor due to NBTI, one can predict the performance degradation of a circuit with a reasonable degree of accuracy. We find that digital circuits are much less sensitive (approximately 9.2% performance degradation in ten years for 70 nm technology) to NBTI degradation than previously anticipated.

Robust subthreshold logic for ultra-low power operation

Abstract: Digital subthreshold logic circuits can be used for applications in the ultra-low power end of the design spectrum, where performance is of secondary importance. In this paper, we propose two different subthreshold logic families: 1) variable threshold voltage subthreshold CMOS (VT-Sub-CMOS) and 2) subthreshold dynamic threshold voltage MOS (Sub-DTMOS) logic. Both logic families have comparable power consumption as regular subthreshold CMOS logic (which is up to six orders of magnitude lower than that of normal strong inversion circuit) with superior robustness and tolerance to process and temperature variations than that of regular subthreshold CMOS logic.

Robust subthreshold logic for ultra-low power operation

Abstract: Digital subthreshold logic circuits can be used for applications in the ultra-low power end of the design spectrum, where performance is of secondary importance. In this paper, we propose two different subthreshold logic families: 1) variable threshold voltage subthreshold CMOS (VT-Sub-CMOS) and 2) subthreshold dynamic threshold voltage MOS (Sub-DTMOS) logic. Both logic families have comparable power consumption as regular subthreshold CMOS logic (which is up to six orders of magnitude lower than that of normal strong inversion circuit) with superior robustness and tolerance to process and temperature variations than that of regular subthreshold CMOS logic.

A process-tolerant cache architecture for improved yield in nanoscale technologies

Abstract: Process parameter variations are expected to be significantly high in a sub-50-nm technology regime, which can severely affect the yield, unless very conservative design techniques are employed. The parameter variations are random in nature and are expected to be more pronounced in minimum geometry transistors commonly used in memories such as SRAM. Consequently, a large number of cells in a memory are expected to be faulty due to variations in different process parameters. We analyze the impact of process variation on the different failure mechanisms in SRAM cells. We also propose a process-tolerant cache architecture suitable for high-performance memory. This technique dynamically detects and replaces faulty cells by dynamically resizing the cache. It surpasses all the contemporary fault tolerant schemes such as row/column redundancy and error-correcting code (ECC) in handling failures due to process variation. Experimental results on a 64-K direct map L1 cache show that the proposed technique can achieve 94% yield compared to its original 33% yield (standard cache) in a 45-nm predictive technology under /spl sigma//sub Vt-inter/=/spl sigma//sub Vt-intra/=30 mV.

Ultrathin Films of Single-Walled Carbon Nanotubes for Electronics and Sensors: A Review of Fundamental and Applied Aspects

Abstract: Ultrathin films of single-walled carbon nanotubes (SWNTs) represent an attractive, emerging class of material, with properties that can approach the exceptional electrical, mechanical, and optical characteristics of individual SWNTs, in a format that, unlike isolated tubes, is readily suitable for scalable integration into devices. These features suggest the potential for realistic applications as conducting or semiconducting layers in diverse types of electronic, optoelectronic and sensor systems. This article reviews recent advances in assembly techniques for forming such films, modeling and experimental work that reveals their collective properties, and engineering aspects of implementation in sensors and in electronic devices and circuits with various levels of complexity. A concluding discussion provides some perspectives on possibilities for future work in fundamental and applied aspects.

Near-Threshold Computing: Reclaiming Moore's Law Through Energy Efficient Integrated Circuits

Abstract: Power has become the primary design constraint for chip designers today. While Moore's law continues to provide additional transistors, power budgets have begun to prohibit those devices from actually being used. To reduce energy consumption, voltage scaling techniques have proved a popular technique with subthreshold design representing the endpoint of voltage scaling. Although it is extremely energy efficient, subthreshold design has been relegated to niche markets due to its major performance penalties. This paper defines and explores near-threshold computing (NTC), a design space where the supply voltage is approximately equal to the threshold voltage of the transistors. This region retains much of the energy savings of subthreshold operation with more favorable performance and variability characteristics. This makes it applicable to a broad range of power-constrained computing segments from sensors to high performance servers. This paper explores the barriers to the widespread adoption of NTC and describes current work aimed at overcoming these obstacles.

Near-Threshold Computing: Reclaiming Moore's Law Through Energy Efficient Integrated Circuits Future computer systems promise to achieve an energy reduction of 100 or more times with memory design, device structure, device fabrication techniques, and clocking, all optimized for low-voltage operation.

Abstract: Power has become the primary design constraint for chip designers today. While Moore's law continues to provide additional transistors, power budgets have begun to prohibit those devices from actually being used. To reduce energy consumption, voltage scaling techniques have proved a popular technique with subthreshold design representing the endpoint of voltage scaling. Although it is extremely energy efficient, subthreshold design has been relegated to niche markets due to its major performance penalties. This paper defines and explores near-threshold computing (NTC), a design space where the supply voltage is approximately equal to the threshold voltage of the transistors. This region retains much of the energy savings of subthreshold operation with more favor- able performance and variability characteristics. This makes it applicable to a broad range of power-constrained computing segments from sensors to high performance servers. This paper explores the barriers to the widespread adoption of NTC and describes current work aimed at overcoming these obstacles.

Stall-Time Fair Memory Access Scheduling for Chip Multiprocessors

Abstract: DRAM memory is a major resource shared among cores in a chip multiprocessor (CMP) system. Memory requests from different threads can interfere with each other. Existing memory access scheduling techniques try to optimize the overall data throughput obtained from the DRAM and thus do not take into account inter-thread interference. Therefore, different threads running together on the same chip can ex- perience extremely different memory system performance: one thread can experience a severe slowdown or starvation while another is un- fairly prioritized by the memory scheduler. This paper proposes a new memory access scheduler, called the Stall-Time Fair Memory scheduler (STFM), that provides quality of service to different threads sharing the DRAM memory system. The goal of the proposed scheduler is to "equalize" the DRAM-related slowdown experienced by each thread due to interference from other threads, without hurting overall system performance. As such, STFM takes into account inherent memory characteristics of each thread and does not unfairly penalize threads that use the DRAM system without interfering with other threads. We show that STFM significantly reduces the unfairness in the DRAM system while also improving system throughput (i.e., weighted speedup of threads) on a wide variety of workloads and systems. For example, averaged over 32 different workloads running on an 8-core CMP, the ratio between the highest DRAM-related slowdown and the lowest DRAM-related slowdown reduces from 5.26X to 1.4X, while the average system throughput improves by 7.6%. We qualitatively and quantitatively compare STFM to one new and three previously- proposed memory access scheduling algorithms, including network fair queueing. Our results show that STFM provides the best fairness, system throughput, and scalability.

Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics

Abstract: Two-dimensional (2D) materials have generated great interest in the past few years as a new toolbox for electronics. This family of materials includes, among others, metallic graphene, semiconducting transition metal dichalcogenides (such as MoS2), and insulating boron nitride. These materials and their heterostructures offer excellent mechanical flexibility, optical transparency, and favorable transport properties for realizing electronic, sensing, and optical systems on arbitrary surfaces. In this paper, we demonstrate a novel technology for constructing large-scale electronic systems based on graphene/molybdenum disulfide (MoS2) heterostructures grown by chemical vapor deposition. We have fabricated high-performance devices and circuits based on this heterostructure, where MoS2 is used as the transistor channel and graphene as contact electrodes and circuit interconnects. We provide a systematic comparison of the graphene/MoS2 heterojunction contact to more traditional MoS2-metal junctions, as well as ...