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Birabar Nanda

Researcher at Indian Institute of Technology Madras

Publications -  90
Citations -  1364

Birabar Nanda is an academic researcher from Indian Institute of Technology Madras. The author has contributed to research in topics: Band gap & Ferromagnetism. The author has an hindex of 17, co-authored 73 publications receiving 1046 citations. Previous affiliations of Birabar Nanda include Indian Institutes of Technology & University of Missouri.

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Enhanced bulk photovoltaic response in Sn doped BaTiO3 through composition dependent structural transformation

TL;DR: The experimental and theoretical studies indicate that the sample with the orthorhombic phase is preferable for the enhanced photovoltaic response in comparison to the tetragonal phase.
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Effect of frustrated exchange interactions and spin-half-impurity on the electronic structure of strongly correlated NiFe 2 O 4

TL;DR: In this article, a spin-frustrated triangular lattice with one of the vertices occupied by tetrahedral spins and the remaining two occupied by octahedral spins was investigated.
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Second-neighbor electron hopping and pressure induced topological quantum phase transition in insulating cubic perovskites

TL;DR: In this article, the authors predict a Dirac semimetal topological insulator phase transition with uniform compression using density functional calculations on cubic perovskites with the aid of a Slater-Koster tight binding Hamiltonian, apart from the valence electron count, the band topology of these perovksites is determined by five parameters involving electron hopping among the Sn-$s,p$} orbitals.
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Spin-glass state in nanoparticulate (La0.7Sr0.3MnO3)(1-x) (BaTiO3)(x) solid solutions: Experimental and density-functional studies

TL;DR: In this paper, the transition from robust ferromagnetism to spin-glass state in nanoparticulate La0.7Sr0.3MnO3 through solid solution with BaTiO3 was reported.
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Topologically invariant double Dirac states in bismuth-based perovskites: Consequence of ambivalent charge states and covalent bonding

TL;DR: In this paper, the authors reveal the existence of two TI states, one in valence band (V-TI) and the other in conduction band (C-TI), as the universal feature of perovskite families.