B
Bo Zhang
Researcher at University of Electronic Science and Technology of China
Publications - 1016
Citations - 9148
Bo Zhang is an academic researcher from University of Electronic Science and Technology of China. The author has contributed to research in topics: Breakdown voltage & Voltage. The author has an hindex of 38, co-authored 867 publications receiving 6576 citations. Previous affiliations of Bo Zhang include Chengdu University of Information Technology & Chinese Academy of Engineering.
Papers
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Journal ArticleDOI
A survey on terahertz communications
Zhi Chen,Xinying Ma,Bo Zhang,Yaxin Zhang,Zhongqian Niu,Ningyuan Kuang,Wenjie Chen,Lingxiang Li,Shaoqian Li +8 more
TL;DR: A comprehensive literature review on the development towards terahertz communications and some key technologies faced in THz wireless communication systems are presented and several potential application scenarios are discussed.
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Gbps terahertz external modulator based on a composite metamaterial with a double-channel heterostructure.
Yaxin Zhang,Shen Qiao,Shixiong Liang,Zhenhua Wu,Ziqiang Yang,Zhihong Feng,Han Sun,Yucong Zhou,Linlin Sun,Zhi Chen,Xianbing Zou,Bo Zhang,Jianhao Hu,Shaoqian Li,Qin Chen,Ling Li,Gaiqi Xu,Yuncheng Zhao,Sheng-Gang Liu +18 more
TL;DR: This active composite metamaterial modulator is the first to achieve a 1 GHz modulation speed and 85% modulation depth during real-time dynamic tests and is the basis for the development of effective and ultrafast dynamic devices for THz wireless communication and imaging systems.
Journal ArticleDOI
A Novel 700-V SOI LDMOS With Double-Sided Trench
TL;DR: In this article, a double-sided trenches on the buried oxide layer (DT SOI) is proposed and its breakdown characteristics are investigated theoretically and experimentally in LDMOS.
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High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode With MIS-Gated Hybrid Anode
TL;DR: In this article, an AlGaN/GaN-on-Si lateral power diode with recessed metal/Al2O3/III-nitride (MIS)-gated ohmic anode for improved forward conduction and reverse blocking has been realized.
Journal ArticleDOI
New thin-film power MOSFETs with a buried oxide double step structure
Baoxing Duan,Bo Zhang,Zhaoji Li +2 more
TL;DR: In this paper, a new silicon-on-insulator (SOI) power MOSFET structure is proposed, in which buried oxide step structure (BOSS) is replaced by a buried oxide double step (BODS).