scispace - formally typeset
B

Bongmook Lee

Researcher at North Carolina State University

Publications -  76
Citations -  1046

Bongmook Lee is an academic researcher from North Carolina State University. The author has contributed to research in topics: Atomic layer deposition & Dielectric. The author has an hindex of 14, co-authored 76 publications receiving 888 citations. Previous affiliations of Bongmook Lee include Florida International University.

Papers
More filters
Journal ArticleDOI

Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing

TL;DR: The latest advances in high-efficiency nanostructured energy harvesters and storage capacitors, new sensing modalities that consume less power, low power computation, and communication strategies, and novel flexible materials that provide form, function, and comfort are presented.
Journal ArticleDOI

Low-Power Wearable Systems for Continuous Monitoring of Environment and Health for Chronic Respiratory Disease

TL;DR: The preliminary efforts to achieve a submilliwatt system ultimately powered by the energy harvested from thermal radiation and motion of the body are described with the primary contributions being an ultralow-power ozone sensor, an volatile organic compounds sensor, spirometer, and the integration of these and other sensors in a multimodal sensing platform.
Journal ArticleDOI

Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications

TL;DR: In this paper, a study has been performed to understand the gradual reset in Al2O3 resistive random access memory (RRAM) devices, where a significantly higher number of vacancies are created in the dielectric during the set event.
Journal ArticleDOI

Charge storage characteristics of ultra-small Pt nanoparticle embedded GaAs based non-volatile memory

TL;DR: In this article, a unique tilt target sputtering configuration was employed to produce highly homogenous nanoparticle arrays, with sizes ranging from ∼07 to 134 nm and particle densities of ∼33 −59 cm−2.
Journal ArticleDOI

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices

TL;DR: In this paper, the authors used small-signal equivalent circuit models and TCAD simulations for trap density estimation in GaN metal-oxide-semiconductor-heterojunction-field effect transistor (MOS-HFET) devices for use in high-voltage power and RF applications.