Many studies have shown how pigments and internal nanostructures generate color in nature. External surface structures can also influence appearance, such as by causing multiple scattering of light (structural absorption) to produce a velvety, super black appearance. Here we show that feathers from five species of birds of paradise (Aves: Paradisaeidae) structurally absorb incident light to produce extremely low-reflectance, super black plumages. Directional reflectance of these feathers (0.05-0.31%) approaches that of man-made ultra-absorbent materials. SEM, nano-CT, and ray-tracing simulations show that super black feathers have titled arrays of highly modified barbules, which cause more multiple scattering, resulting in more structural absorption, than normal black feathers. Super black feathers have an extreme directional reflectance bias and appear darkest when viewed from the distal direction. We hypothesize that structurally absorbing, super black plumage evolved through sensory bias to enhance the perceived brilliance of adjacent color patches during courtship display.

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Structural absorption by barbule microstructures of super black bird of paradise feathers

Atomic layer deposition: an overview.

https://cyberleninka.org/article/n/247805.pdf

A brief review of atomic layer deposition: from fundamentals to applications

Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The deposition of a film of a given material by ALD relies on the successive, separated, and self-terminating gas–solid reactions of typically two gaseous reactants. Hundreds of ALD chemistries have been found for depositing a variety of materials during the past decades, mostly for inorganic materials but lately also for organic and inorganic–organic hybrid compounds. One factor that often dictates the properties of ALD films in actual applications is the crystallinity of the grown film: Is the material amorphous or, if it is crystalline, which phase(s) is (are) present. In this thematic review, we first describe the basics of ALD, summarize the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD [R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005)], and give an overview of the status of processing ternary compounds by ALD. We then proceed to analyze the published experimental data for information on the crystallinity and phase of inorganic materials deposited by ALD from different reactants at different temperatures. The data are collected for films in their as-deposited state and tabulated for easy reference. Case studies are presented to illustrate the effect of different process parameters on crystallinity for representative materials: aluminium oxide, zirconium oxide, zinc oxide, titanium nitride, zinc zulfide, and ruthenium. Finally, we discuss the general trends in the development of film crystallinity as function of ALD process parameters. The authors hope that this review will help newcomers to ALD to familiarize themselves with the complex world of crystalline ALD films and, at the same time, serve for the expert as a handbook-type reference source on ALD processes and film crystallinity.

Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

Single-crystal perovskite devices 2–3 mm thick exhibit 16.4% X-ray detection efficiency with sensitivity four times higher than α-Se X-ray detectors.

Sensitive X-ray detectors made of methylammonium lead tribromide perovskite single crystals

Excellent surface passivation of c-Si has been achieved by Al2O3 films prepared by plasma-assisted atomic layer deposition, yielding effective surface recombination velocities of 2 and 13cm∕s on low resistivity n- and p-type c-Si, respectively. These results obtained for ∼30nm thick Al2O3 films are comparable to state-of-the-art results when employing thermal oxide as used in record-efficiency c-Si solar cells. A 7nm thin Al2O3 film still yields an effective surface recombination velocity of 5cm∕s on n-type silicon.

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Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

Al2O3 is a versatile high-κ dielectric that has excellent surface passivation properties on crystalline Si (c-Si), which are of vital importance for devices such as light emitting diodes and high-efficiency solar cells. We demonstrate both experimentally and by simulations that the surface passivation can be related to a satisfactory low interface defect density in combination with a strong field-effect passivation induced by a negative fixed charge density Qf of up to 1013 cm−2 present in the Al2O3 film at the interface with the underlying Si substrate. The negative polarity of Qf in Al2O3 is especially beneficial for the passivation of p-type c-Si as the bulk minority carriers are shielded from the c-Si surface. As the level of field-effect passivation is shown to scale with Qf2, the high Qf in Al2O3 tolerates a higher interface defect density on c-Si compared to alternative surface passivation schemes.

/pdf/on-the-c-si-surface-passivation-mechanism-by-the-negative-4z2pi0oo3h.pdf

On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

Thin Al2O3 films with a thickness of 7–30 nm synthesized by plasma-assisted atomic layer deposition (ALD) were used for surface passivation of crystalline silicon (c-Si) of different doping concentrations. The level of surface passivation in this study was determined by techniques based on photoconductance, photoluminescence, and infrared emission. Effective surface recombination velocities of 2 and 6 cm/s were obtained on 1.9 Ω cm n-type and 2.0 Ω cm p-type c-Si, respectively. An effective surface recombination velocity below 1 cm/s was unambiguously obtained for nearly intrinsic c-Si passivated by Al2O3. A high density of negative fixed charges was detected in the Al2O3 films and its impact on the level of surface passivation was demonstrated experimentally. The negative fixed charge density results in a flat injection level dependence of the effective lifetime on p-type c-Si and explains the excellent passivation of highly B-doped c-Si by Al2O3. Furthermore, a brief comparison is presented between the ...

/pdf/silicon-surface-passivation-by-atomic-layer-deposited-al2o3-54m76adjng.pdf

Silicon surface passivation by atomic layer deposited Al2O3

Atomic-layer-deposited aluminium oxide (Al2O3) is applied as rear-surface-passivating dielectric layer to passivated emitter and rear cell (PERC)-type crystalline silicon (c-Si) solar cells. The excellent passivation of low-resistivity p-type silicon by the negative-charge-dielectric Al2O3 is confirmed on the device level by an independently confirmed energy conversion efficiency of 20·6%. The best results are obtained for a stack consisting of a 30 nm Al2O3 film covered by a 200 nm plasma-enhanced-chemical-vapour-deposited silicon oxide (SiOx) layer, resulting in a rear surface recombination velocity (SRV) of 70 cm/s. Comparable results are obtained for a 130 nm single-layer of Al2O3, resulting in a rear SRV of 90 cm/s. Copyright © 2008 John Wiley & Sons, Ltd.

Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3

From lifetime measurements, including a direct experimental comparison with thermal SiO2, a-Si:H, and as-deposited a-SiNx:H, it is demonstrated that Al2O3 provides an excellent level of surface passivation on highly B-doped c-Si with doping concentrations around 1019cm−3. The Al2O3 films, synthesized by plasma-assisted atomic layer deposition and with a high fixed negative charge density, limit the emitter saturation current density of B-diffused p+-emitters to ∼10 and ∼30fA∕cm2 on >100 and 54Ω∕sq sheet resistance p+-emitters, respectively. These results demonstrate that highly doped p-type Si surfaces can be passivated as effectively as highly doped n-type surfaces.

/pdf/excellent-passivation-of-highly-doped-p-type-si-surfaces-by-210ivoffh1.pdf

Bram Hoex

Papers

Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

Silicon surface passivation by atomic layer deposited Al2O3

Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3

Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3