Author
Brian Corbett
Other affiliations: National University of Ireland, University College Cork, Oculus VR
Bio: Brian Corbett is an academic researcher from Tyndall National Institute. The author has contributed to research in topics: Laser & Semiconductor laser theory. The author has an hindex of 33, co-authored 378 publications receiving 4216 citations. Previous affiliations of Brian Corbett include National University of Ireland & University College Cork.
Papers published on a yearly basis
Papers
More filters
TL;DR: The realization of GaAs lasers on a silicon substrate using a print transfer process offers an alternative wafer-bonding technique for the hybrid integration of optoelectronics.
Abstract: The realization of GaAs lasers on a silicon substrate using a print transfer process offers an alternative wafer-bonding technique for the hybrid integration of optoelectronics.
235 citations
TL;DR: The total demonstrated net capacity, taking into account 20% of FEC-overhead and 7.5% additional overhead (Ethernet and training sequences), is 57.6 Tb/s, corresponding to a spectral efficiency of 12 bits/s/Hz.
Abstract: Transmission of a 73.7 Tb/s (96x3x256-Gb/s) DP-16QAM mode-division-multiplexed signal over 119km of few-mode fiber transmission line incorporating an inline multi mode EDFA and a phase plate based mode (de-)multiplexer is demonstrated. Data-aided 6x6 MIMO digital signal processing was used to demodulate the signal. The total demonstrated net capacity, taking into account 20% of FEC-overhead and 7.5% additional overhead (Ethernet and training sequences), is 57.6 Tb/s, corresponding to a spectral efficiency of 12 bits/s/Hz.
151 citations
16 Sep 2012
TL;DR: In this article, a 73.7 Tb/s (96×3×256Gb/s) DP-16QAM mode-division-multiplexed signal over 119km of few-mode fiber with inline multi-mode EDFA, using 6x6 MIMO digital signal processing.
Abstract: We show transmission of a 73.7 Tb/s (96×3×256-Gb/s) DP-16QAM mode-division-multiplexed signal over 119km of few-mode fiber with inline multi-mode EDFA, using 6x6 MIMO digital signal processing. The total demonstrated net capacity is 57.6 Tb/s (SE 12 bits/s/Hz).
133 citations
TL;DR: In this paper, the authors review some of the recent developments in layer transfer and particularly the use of the transfer print technology for enabling active photonic devices on rigid and flexible foreign substrates.
124 citations
TL;DR: WDM transmission was successfully demonstrated over 1.15 km of low-loss hollow core photonic bandgap fiber (HC-PBGF) and over 1 km of solid core fiber (SCF), and it is concluded that the OSNR penalty associated with the SCF is minimal.
Abstract: We show for the first time 100 Gbit/s total capacity at 2 µm waveband, using 4 × 9.3 Gbit/s 4-ASK Fast-OFDM direct modulation and 4 × 15.7 Gbit/s NRZ-OOK external modulation, spanning a 36.3 nm wide wavelength range. WDM transmission was successfully demonstrated over 1.15 km of low-loss hollow core photonic bandgap fiber (HC-PBGF) and over 1 km of solid core fiber (SCF). We conclude that the OSNR penalty associated with the SCF is minimal, while a ~1-2 dB penalty was observed after the HC-PBGF probably due to mode coupling to higher-order modes.
113 citations
Cited by
More filters
TL;DR: The reflectance and the phase change on reflection from semiconductor-metal interfaces (including the case of metallic multilayers) can be accurately described by use of the proposed models for the optical functions of metallic films and the matrix method for multilayer calculations.
Abstract: We present models for the optical functions of 11 metals used as mirrors and contacts in optoelectronic and optical devices: noble metals (Ag, Au, Cu), aluminum, beryllium, and transition metals (Cr, Ni, Pd, Pt, Ti, W). We used two simple phenomenological models, the Lorentz-Drude (LD) and the Brendel-Bormann (BB), to interpret both the free-electron and the interband parts of the dielectric response of metals in a wide spectral range from 0.1 to 6 eV. Our results show that the BB model was needed to describe appropriately the interband absorption in noble metals, while for Al, Be, and the transition metals both models exhibit good agreement with the experimental data. A comparison with measurements on surface normal structures confirmed that the reflectance and the phase change on reflection from semiconductor-metal interfaces (including the case of metallic multilayers) can be accurately described by use of the proposed models for the optical functions of metallic films and the matrix method for multilayer calculations.
3,629 citations
TL;DR: In this paper, the authors summarized the simultaneous transmission of several independent spatial channels of light along optical fibres to expand the data-carrying capacity of optical communications, and showed that the results achieved in both multicore and multimode optical fibers are documented.
Abstract: This Review summarizes the simultaneous transmission of several independent spatial channels of light along optical fibres to expand the data-carrying capacity of optical communications. Recent results achieved in both multicore and multimode optical fibres are documented.
2,629 citations
TL;DR: Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.
Abstract: Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.
1,560 citations
Journal Article•
TL;DR: In this article, the diffraction tomography theorem is adapted to one-dimensional length measurement and the resulting spectral interferometry technique is described and the first length measurements using this technique on a model eye and on a human eye in vivo are presented.
Abstract: The diffraction tomography theorem is adapted to one-dimensional length measurement. The resulting spectral interferometry technique is described and the first length measurements using this technique on a model eye and on a human eye in vivo are presented.
1,237 citations
TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
Abstract: Lasing is experimentally demonstrated in a direct bandgap GeSn alloy, grown directly onto Si(001). The authors observe a clear lasing threshold as well as linewidth narrowing at low temperatures.
1,027 citations