Bryan Crawford

Bio: Bryan Crawford is an academic researcher from Johns Hopkins University. The author has contributed to research in topics: Nanoindentation & Modulus. The author has an hindex of 10, co-authored 16 publications receiving 998 citations. Previous affiliations of Bryan Crawford include Agilent Technologies & Analytical Services.

High-Strength Chemical-Vapor–Deposited Graphene and Grain Boundaries

Abstract: Pristine graphene is the strongest material ever measured. However, large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain grain boundaries that can potentially weaken the material. We combined structural characterization by means of transmission electron microscopy with nanoindentation in order to study the mechanical properties of CVD-graphene films with different grain sizes. We show that the elastic stiffness of CVD-graphene is identical to that of pristine graphene if postprocessing steps avoid damage or rippling. Its strength is only slightly reduced despite the existence of grain boundaries. Indentation tests directly on grain boundaries confirm that they are almost as strong as pristine. Graphene films consisting entirely of well-stitched grain boundaries can retain ultrahigh strength, which is critical for a large variety of applications, such as flexible electronics and strengthening components.

Measuring substrate-independent modulus of thin films

Abstract: Substrate influence is a common problem when using instrumented indentation (also known as nano-indentation) to evaluate the elastic modulus of thin films. Many have proposed models to be able to extract the film modulus (Ef) from the measured substrate-affected modulus, assuming that the film thickness (t) and substrate modulus (Es) are known. Existing analytic models work well if the film is more compliant than the substrate. However, no analytic model accurately predicts response when the modulus of the film is more than double the modulus of the substrate. In this work, a new analytic model is proposed. This new model is shown by finite-element analysis to be able to accurately predict composite response over the domain 0.1 < Ef/Es < 10. Finally, the new model is used to analyze experimental data for compliant films on stiff substrates and stiff films on compliant substrates.

Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics.

Abstract: The two-dimensional semiconducting material molybdenum disulphide shows strong piezoelectricity in its single-layered form, suggesting possible applications in nanoscale electromechanical devices for sensing and energy harvesting. Two-dimensional semiconducting materials are the focus of much research effort thanks to their unusual and potentially useful physical properties. Wenzhou Wu and colleagues now confirm theoretical expectations that one such material — molybdenum disulphide — exhibits strong piezoelectricity in its single-layered form. Such a coupling of mechanical and electrical properties suggests possible applications in nanoscale electromechanical devices for sensing and energy harvesting. The piezoelectric characteristics of nanowires, thin films and bulk crystals have been closely studied for potential applications in sensors, transducers, energy conversion and electronics1,2,3. With their high crystallinity and ability to withstand enormous strain4,5,6, two-dimensional materials are of great interest as high-performance piezoelectric materials. Monolayer MoS2 is predicted to be strongly piezoelectric, an effect that disappears in the bulk owing to the opposite orientations of adjacent atomic layers7,8. Here we report the first experimental study of the piezoelectric properties of two-dimensional MoS2 and show that cyclic stretching and releasing of thin MoS2 flakes with an odd number of atomic layers produces oscillating piezoelectric voltage and current outputs, whereas no output is observed for flakes with an even number of layers. A single monolayer flake strained by 0.53% generates a peak output of 15 mV and 20 pA, corresponding to a power density of 2 mW m−2 and a 5.08% mechanical-to-electrical energy conversion efficiency. In agreement with theoretical predictions, the output increases with decreasing thickness and reverses sign when the strain direction is rotated by 90°. Transport measurements show a strong piezotronic effect in single-layer MoS2, but not in bilayer and bulk MoS2. The coupling between piezoelectricity and semiconducting properties in two-dimensional nanomaterials may enable the development of applications in powering nanodevices, adaptive bioprobes and tunable/stretchable electronics/optoelectronics.

Two-dimensional flexible nanoelectronics.

Abstract: The unique electrical, mechanical and physical properties of two-dimensional materials make them attractive candidates in flexible nanoelectronic systems. Here Akinwande et al. review the literature on two-dimensional materials in flexible nanoelectronics, and highlight barriers to their full implementation.

25th anniversary article: Understanding the lithiation of silicon and other alloying anodes for lithium-ion batteries

Abstract: Alloying anodes such as silicon are promising electrode materials for next-generation high energy density lithium-ion batteries because of their ability to reversibly incorporate a high concentration of Li atoms. However, alloying anodes usually exhibit a short cycle life due to the extreme volumetric and structural changes that occur during lithium insertion/extraction; these transformations cause mechanical fracture and exacerbate side reactions. To solve these problems, there has recently been significant attention devoted to creating silicon nanostructures that can accommodate the lithiation-induced strain and thus exhibit high Coulombic efficiency and long cycle life. In parallel, many experiments and simulations have been conducted in an effort to understand the details of volumetric expansion, fracture, mechanical stress evolution, and structural changes in silicon nanostructures. The fundamental materials knowledge gained from these studies has provided guidance for designing optimized Si electrode structures and has also shed light on the factors that control large-volume change solid-state reactions. In this paper, we review various fundamental studies that have been conducted to understand structural and volumetric changes, stress evolution, mechanical properties, and fracture behavior of nanostructured Si anodes for lithium-ion batteries and compare the reaction process of Si to other novel anode materials.

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

Abstract: Atomically thin forms of layered materials, such as conducting graphene, insulating hexagonal boron nitride (hBN), and semiconducting molybdenum disulfide (MoS2), have generated great interests recently due to the possibility of combining diverse atomic layers by mechanical “stacking” to create novel materials and devices. In this work, we demonstrate field-effect transistors (FETs) with MoS2 channels, hBN dielectric, and graphene gate electrodes. These devices show field-effect mobilities of up to 45 cm2/Vs and operating gate voltage below 10 V, with greatly reduced hysteresis. Taking advantage of the mechanical strength and flexibility of these materials, we demonstrate integration onto a polymer substrate to create flexible and transparent FETs that show unchanged performance up to 1.5% strain. These heterostructure devices consisting of ultrathin two-dimensional (2D) materials open up a new route toward high-performance flexible and transparent electronics.